公开(公告)号：US06684172B1

公开(公告)日：2004-01-27

申请号：US10034165

申请日：2001-12-27

申请人： Ramkumar Subramanian ,  Steven C. Avanzino ,  Christopher F. Lyons ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Cyrus E. Tabery

发明人： Ramkumar Subramanian ,  Steven C. Avanzino ,  Christopher F. Lyons ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Cyrus E. Tabery

IPC分类号： G01L2500

CPC分类号： C23C16/52 ,  C23C14/547 ,  C23C18/1675 ,  C25D21/12 ,  H01L21/76877

摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.

摘要翻译： 本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。 本发明还涉及其工具表征过程及其系统。

公开(公告)号：US06629786B1

公开(公告)日：2003-10-07

申请号：US09845232

申请日：2001-04-30

申请人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G03D500

CPC分类号： G03D5/00

摘要： A system for regulating the time and temperature of a development process is provided. The system includes one or more light sources, each light source directing light to one or more gratings being developed on a wafer. Light reflected from the gratings is collected by a measuring system, which processes the collected light. Light passing through the gratings may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the progress of development of the respective portions of the wafer. The measuring system provides progress of development related data to a processor that determines the progress of development of the respective portions of the wafer. The system also includes a plurality of heating devices, each heating device corresponds to a respective portion of the developer and provides for the heating thereof. The processor selectively controls the heating devices so as to regulate temperature of the respective portions of the wafer.

摘要翻译： 提供了一种用于调节开发过程的时间和温度的系统。 该系统包括一个或多个光源，每个光源将光引导到在晶片上显影的一个或多个光栅。 从光栅反射的光被测量系统收集，该系统处理收集的光。 通过光栅的光可以类似地由处理所收集的光的测量系统收集。 所收集的光表示晶片的各个部分的显影进展。 该测量系统提供开发相关数据的进展到处理器，该处理器确定晶片的相应部分的开发进度。 该系统还包括多个加热装置，每个加热装置对应于显影剂的相应部分并提供其加热。 处理器选择性地控制加热装置，以调节晶片各部分的温度。

公开(公告)号：US06594024B1

公开(公告)日：2003-07-15

申请号：US09886863

申请日：2001-06-21

申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Carmen Morales

发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Carmen Morales

IPC分类号： G01B1128

CPC分类号： B24B37/005 ,  B24B49/12 ,  G01N21/47 ,  G01N21/9501 ,  H01L21/30625

摘要： One aspect of the present invention relates to an in-line system for monitoring and optimizing an on-going CMP process in order to determine a CMP process endpoint comprising a wafer, wherein the wafer is subjected to the CMP process; a CMP process monitoring system for generating a signature related to wafer dimensions for the wafer subjected to the CMP process; and a signature library to which the generated signature is compared to determine a state of the wafer. Another aspect relates to an in-line method for monitoring and optimizing an on-going CMP process involving providing a wafer, wherein the wafer is subjected to a CMP process; generating a signature associated with the wafer; comparing the generated signature to a signature library to determine a state of the wafer; and using a closed-loop feedback control system for modifying the on-going CMP process according to the determined state of the wafer.

摘要翻译： 本发明的一个方面涉及用于监测和优化正在进行的CMP工艺的在线系统，以便确定包括晶片的CMP工艺端点，其中晶片经历CMP工艺; 用于生成与经历CMP处理的晶片的晶片尺寸相关的签名的CMP过程监控系统; 以及生成的签名被比较的签名库，以确定晶片的状态。 另一方面涉及用于监测和优化涉及提供晶片的正在进行的CMP工艺的在线方法，其中所述晶片经受CMP工艺; 产生与晶片相关联的签名; 将生成的签名与签名库进行比较以确定晶片的状态; 以及使用闭环反馈控制系统来根据所确定的晶片状态来修正正在进行的CMP工艺。

公开(公告)号：US06556303B1

公开(公告)日：2003-04-29

申请号：US09902366

申请日：2001-07-10

申请人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Khoi A. Phan

发明人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Khoi A. Phan

IPC分类号： G01B1114

CPC分类号： G01B11/0683 ,  G01B11/0625 ,  H01L22/12

摘要： The present invention is directed to a system and a method for controlling a thin film formation on a moving substrate as part of a process for manufacturing an integrated circuit. The invention involves the use of scatterometry to control the thin film formation process by analyzing the thin film on the moving substrate in a periodic manner. A registration feature associated with the moving substrate can be utilized in conjunction with a signaling system to determine a position of the moving substrate, whereby a repeatable analysis of a corresponding location on the moving substrate can be performed. Scatterometry permits in-situ measurements of thin film formation progress, whereby thin film formation process conditions can be controlled in a feedback loop to obtain a targeted result. Scatterometry can also be facilitated by providing a grating pattern on a non-production portion of the substrate.

摘要翻译： 本发明涉及一种用于控制移动衬底上的薄膜形成的系统和方法，作为用于制造集成电路的工艺的一部分。 本发明涉及使用散射法来以周期性方式分析移动基片上的薄膜来控制薄膜形成过程。 与移动基板相关联的配准特征可以与信号系统结合使用，以确定移动基板的位置，由此可以执行移动基板上对应位置的可重复分析。 散射测量允许原位测量薄膜形成进程，由此可以在反馈回路中控制薄膜形成工艺条件以获得目标结果。 也可以通过在基板的非生产部分上提供光栅图案来促进散射测量。

公开(公告)号：US06448097B1

公开(公告)日：2002-09-10

申请号：US09911236

申请日：2001-07-23

申请人： Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

发明人： Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

IPC分类号： H01L3126

CPC分类号： G01N21/64 ,  G01N2021/6417 ,  H01L22/26

摘要： A system and method is provided for determining and controlling development of a semiconductor substrate employing fluorescence spectroscopy. One aspect of the invention relates to a system and method employing fluorescence spectroscopy to facilitate control of a chemical trim etch process during development of a photoresist material layer. The chemical trim etch process comprises applying a trim compound or material to a patterned photoresist. The trim compound or material is diffusable into the sides and top of the patterned resist. The diffused regions of the resist are soluble in a developer, which facilitates creating smaller features in the patterned photoresist. The fluorescence spectroscopy system can be employed to measure isolated and dense gratings or CDs and use the evolution of the CD to determine when to terminate the chemical trim process.

摘要翻译： 提供了一种使用荧光光谱法确定和控制半导体衬底的开发的系统和方法。 本发明的一个方面涉及使用荧光光谱学来促进在光致抗蚀剂材料层的显影期间控制化学修剪蚀刻工艺的系统和方法。 化学修剪蚀刻工艺包括将修剪化合物或材料施加到图案化的光致抗蚀剂上。 修整组合物或材料可扩散到图案化抗蚀剂的侧面和顶部。 抗蚀剂的扩散区域可溶于显影剂，这有助于在图案化的光致抗蚀剂中产生更小的特征。 荧光光谱系统可用于测量孤立和致密的光栅或CD，并使用CD的演变来确定何时终止化学修饰过程。

公开(公告)号：US06444381B1

公开(公告)日：2002-09-03

申请号：US09729295

申请日：2000-12-04

申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Michael K. Templeton ,  Bharath Rangarajan ,  Khoi A. Phan ,  Bryan K. Choo ,  Sanjay K. Yedur

发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Michael K. Templeton ,  Bharath Rangarajan ,  Khoi A. Phan ,  Bryan K. Choo ,  Sanjay K. Yedur

IPC分类号： G03F900

CPC分类号： G03F1/74 ,  Y10S430/143

摘要： One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.

摘要翻译： 本发明的一个方面涉及一种用于减少掩模上的碳污染的方法，其涉及将具有含碳污染物的掩模板放置在处理室中; 同时使掩模板与氧气接触，并将电子束的暴露暴露于掩模板，其中含碳污染物转化为副产物; 并从处理室中除去副产物。

公开(公告)号：US06441349B1

公开(公告)日：2002-08-27

申请号：US09558643

申请日：2000-04-26

申请人： Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur

发明人： Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： A system and method for facilitating uniform heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material. The system can include at least one heating element and a heat transfer fluid, the heating element heating the heat transfer fluid, which in turn heats the material. The transfer fluid more evenly distributes the heat from the heating element, which can have hot and cold spots at the material.

摘要翻译： 提供了一种用于促进材料的均匀加热温度的系统和方法。 该材料可以是光致抗蚀剂，顶部或底部抗反射涂层，低K电介质材料，SOG或其它旋涂材料。 该系统可以包括至少一个加热元件和传热流体，该加热元件加热该传热流体，该热传导流体依次加热该材料。 传输流体更均匀地分配来自加热元件的热​​量，其可以在材料上具有热点和冷点。

公开(公告)号：US06335152B1

公开(公告)日：2002-01-01

申请号：US09564408

申请日：2000-05-01

申请人： Ramkumar Subramanian ,  Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh

发明人： Ramkumar Subramanian ,  Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh

IPC分类号： G03F738

CPC分类号： G03F7/38

摘要： In one embodiment, the present invention relates to a method of processing an irradiated photoresist involving the steps of placing a substrate having the irradiated photoresist thereon at a first temperature in a rapid thermal anneal furnace; heating the substrate having the irradiated photoresist thereon to a second temperature within about 0.1 seconds to about 10 seconds; cooling the substrate having the irradiated photoresist thereon to a third temperature in a rapid thermal annealing furnace within about 0.1 seconds to about 10 seconds; and developing the irradiated photoresist, wherein the second temperature is higher than the first temperature and the third temperature. In another embodiment, the present invention relates to a system of processing a photoresist, containing a source of actinic radiation and a mask for selectively irradiating a photoresist; a rapid thermal annealing furnace for rapidly heating and rapidly cooling a selectively irradiated photoresist, wherein the rapid heating and rapid cooling are independently conducted within about 0.1 seconds to about 10 seconds; and a developer for developing a rapid thermal annealing furnace heated and selectively irradiated photoresist into a patterned photoresist.

摘要翻译： 在一个实施方案中，本发明涉及一种处理被照射的光致抗蚀剂的方法，包括以下步骤：在快速热退火炉中将具有照射光致抗蚀剂的基底在第一温度下放置; 将其上具有照射的光致抗蚀剂的基板加热至约0.1秒至约10秒的第二温度; 将快速热退火炉中具有照射光致抗蚀剂的基板冷却至约0.1秒至约10秒的第三温度; 并且显影所述被照射的光致抗蚀剂，其中所述第二温度高于所述第一温度和所述第三温度。 在另一个实施方案中，本发明涉及一种处理含有光化辐射源的光致抗蚀剂的系统和用于选择性地照射光致抗蚀剂的掩模; 快速热退火炉，用于快速加热和快速冷却选择性照射的光致抗蚀剂，其中快速加热和快速冷却在约0.1秒至约10秒内独立进行; 以及用于将快速热退火炉加热并选择性地照射光致抗蚀剂的显影剂加工成图案化的光致抗蚀剂。

公开(公告)号：US06322009B1

公开(公告)日：2001-11-27

申请号：US09429992

申请日：1999-10-29

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

IPC分类号： B05B900

CPC分类号： H01L21/6708 ,  H01L21/67051

摘要： A combination nozzle for applying a developer material and a washing solution material at different time intervals to a photoresist material layer disposed on a wafer is provided. The combination nozzle includes a number of developer nozzle tips connected to a developer supply line and a number of washing solution nozzle tips connected to a washing solution supply line. The developer supply line and the washing solution supply line ensure that the developer material and the washing solution material are always substantially isolated from one another. Furthermore, the developer nozzle tips and the washing solution nozzle tips are arranged so that developer material and washing solution material do not come into contact with one another. The volume of the material and the volume flow of the material can be controlled by electronically controlled valves.

摘要翻译： 提供了用于将显影剂材料和洗涤液材料以不同的时间间隔施加到设置在晶片上的光致抗蚀剂材料层的组合喷嘴。 组合喷嘴包括连接到显影剂供应管线的多个显影剂喷嘴尖端和连接到洗涤溶液供应管线的多个洗涤溶液喷嘴尖端。 显影剂供应管线和洗涤溶液供应管线确保显影剂材料和洗涤液材料总是基本上彼此隔离。 此外，显影剂喷嘴尖端和洗涤溶液喷嘴尖端被布置成使得显影剂材料和洗涤液材料彼此不接触。 材料的体积和材料的体积流量可以通过电子控制阀来控制。

公开(公告)号：US06245493B1

公开(公告)日：2001-06-12

申请号：US09205738

申请日：1998-12-04

申请人： Bhanwar Singh ,  Bharath Rangarajan ,  Sanjay K. Yedur ,  Michael K. Templeton ,  Christopher F. Lyons

发明人： Bhanwar Singh ,  Bharath Rangarajan ,  Sanjay K. Yedur ,  Michael K. Templeton ,  Christopher F. Lyons

IPC分类号： G03F700

CPC分类号： H01L21/0276 ,  G03F7/091 ,  G03F7/16 ,  H01L21/3105

摘要： A method for creating a roughened surface on a material exposed to light during a photolithographic process is provided. The roughened surface is created on a surface of the material via a plasma etch process. The roughened surface diffuses light incident to the material such that the diffused light causes insubstantial damage to a photoresist subsequently formed on the material.

摘要翻译： 提供了一种在光刻过程中在暴露于光的材料上产生粗糙表面的方法。 通过等离子体蚀刻工艺在材料的表面上形成粗糙表面。 粗糙表面扩散入射到材料的光，使得漫射的光对随后在材料上形成的光致抗蚀剂造成非实质的损坏。