公开(公告)号：US06242347B1

公开(公告)日：2001-06-05

申请号：US09163711

申请日：1998-09-30

Applicant: Anand Vasudev ,  Toshio Itoh ,  Ramanujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

Inventor： Anand Vasudev ,  Toshio Itoh ,  Ramanujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

IPC: H01L2144

CPC classification number: H01L21/67028 ,  Y10S438/905 ,  Y10S438/906

Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

Abstract translation: 一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空 在引入下一个晶圆之前。 晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。 在一个优选实施例中，在利用该腔室以沉积这种材料之前，在室的内表面上沉积薄的钛保护膜。 在每次两级清洁之后补充保护层。

公开(公告)号：US5728197A

公开(公告)日：1998-03-17

申请号：US690148

申请日：1996-07-17

Applicant: Purnesh Seegopaul ,  Li Wu

Inventor： Purnesh Seegopaul ,  Li Wu

IPC: C01B32/949 ,  B22F9/24 ,  C22B1/00 ,  C22B7/00 ,  C22B23/00 ,  C22B34/36 ,  B22F9/00

CPC classification number: C22B1/005 ,  C22B23/0453 ,  C22B34/365 ,  C22B7/007 ,  Y02P10/23 ,  Y02P10/234

Abstract: Tungsten carbide cobalt and tungsten-containing materials are recycled using a single high-temperature oxidation with standard dilution chemistry. The scrap material is ground, oxidized, and subjected to an acid digestion, preferably in hydrochloric acid. This causes the cobalt to form cobalt chloride while the tungsten remains insoluble. The pH is then increased to about 7.0 which causes the cobalt chloride to form cobalt hydroxide which precipitates out of solution. The cobalt and tungsten are separated and dissolved in a high-pH ammonia solution which can then be spray dried to form a precursor powder for subsequent carburization to form tungsten carbide-cobalt powders.

Abstract translation: 碳化钨钴和含钨材料使用标准稀释化学物质的单一高温氧化回收。 将废料研磨，氧化并进行酸消化，优选在盐酸中。 这导致钴形成氯化钴，而钨保持不溶。 然后将pH增加至约7.0，这导致氯化钴形成氢氧化钴，其从溶液中沉淀出来。 将钴和钨分离并溶解在高pH氨溶液中，然后将其喷雾干燥以形成用于随后渗碳的前体粉末以形成碳化钨 - 钴粉末。

公开(公告)号：US07782532B2

公开(公告)日：2010-08-24

申请号：US12120002

申请日：2008-05-13

Applicant: Li Wu ,  Xianghua Shi ,  Zan Gong ,  Jiwu Ling ,  Zhaoyang Sun ,  Xiangtong Yang ,  Yunbin Xu ,  Lei Lin ,  Fuquan Huang

Inventor： Li Wu ,  Xianghua Shi ,  Zan Gong ,  Jiwu Ling ,  Zhaoyang Sun ,  Xiangtong Yang ,  Yunbin Xu ,  Lei Lin ,  Fuquan Huang

IPC: G02B5/30

CPC classification number: G02F1/093

Abstract: An optical isolator includes a birefringent material and a Faraday rotator. The birefringent material receives a forward light propagating in a forward direction and a backward light propagating opposite to the forward direction. The birefringent material has an optical axis, wherein the forward light has a first polarization aligned perpendicular to the optical axis and is configured to pass the first birefringent material substantially along the forward direction. At least a portion of the backward light has a second polarization not perpendicular to the optical axis. The first birefringent material can displace the backward light to form a first displaced backward light. A Faraday rotator can rotate the forward light, and the backward light or the first displaced backward light by a same predetermined angle along the rotation direction.

Abstract translation: 光隔离器包括双折射材料和法拉第旋转器。 双折射材料接收沿正向传播的正向光和向前方向相反传播的向后光。 所述双折射材料具有光轴，其中所述正向光具有垂直于所述光轴的第一偏振，并且被配置为基本上沿着所述向前方向通过所述第一双折射材料。 反射光的至少一部分具有不垂直于光轴的第二偏振光。 第一双折射材料可以将后向光移位以形成第一位移反向光。 法拉第旋转器可以沿着旋转方向旋转向前的光，向后的光或第一个向后的光反向旋转相同的预定角度。

公开(公告)号：US07522293B2

公开(公告)日：2009-04-21

申请号：US11394591

申请日：2006-03-30

Applicant: Li Wu ,  Elina Szeto ,  Michael Kwon

Inventor： Li Wu ,  Elina Szeto ,  Michael Kwon

IPC: G01B11/14

CPC classification number: G01B11/24 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/95615

Abstract: One or more features of multiple patterned layers formed on a semiconductor are determined by obtaining a first measured diffraction signal measured from a first patterned layer before a second patterned layer is formed on top of the first patterned layer. One or more features of the first patterned layer are determined using the first measured diffraction signal. Values of one or more profile parameters of a hypothetical profile of the second patterned layer in combination with the first patterned layer are fixed. A second measured diffraction signal measured from the second patterned layer after the second patterned layer has been formed on top of the first patterned layer is obtained. One or more features of the second patterned layer are determined based on the second measured diffraction signal and the fixed values of the one or more profile parameters.

Abstract translation: 通过在第一图案化层的顶部形成第二图案化层之前，通过获得从第一图案化层测量的第一测量的衍射信号来确定在半导体上形成的多个图案化层的一个或多个特征。 使用第一测量的衍射信号确定第一图案化层的一个或多个特征。 与第一图案化层组合的第二图案化层的假想轮廓的一个或多个轮廓参数的值是固定的。 获得在第一图案化层之上形成第二图案化层之后从第二图案化层测量的第二测量衍射信号。 基于第二测量的衍射信号和一个或多个轮廓参数的固定值来确定第二图案化层的一个或多个特征。

公开(公告)号：US20080080571A1

公开(公告)日：2008-04-03

申请号：US11622387

申请日：2007-01-11

Applicant: Yingjun Ma ,  Jiwu Ling ,  Li Wu ,  Youyi Huang ,  Kangiun Wang

Inventor： Yingjun Ma ,  Jiwu Ling ,  Li Wu ,  Youyi Huang ,  Kangiun Wang

IPC: H01S3/10

CPC classification number: H01S3/109 ,  H01S3/0602 ,  H01S3/0627 ,  H01S3/08 ,  H01S3/08054 ,  H01S3/08072 ,  H01S3/09415 ,  H01S3/10061

Abstract: An intra-cavity frequency-doubling laser device includes a first mirror and a second mirror defining a resonance cavity therein, a gain media to produce a first lasing light in response to an excitation energy received from outside of the resonance cavity, a non-linear optical material to generate a second lasing light in response to the first lasing light. The second lasing light and the first lasing light have different frequencies. The first mirror is reflective to the first lasing light and the second lasing light. The second mirror is reflective to the first lasing light and at least partially transmissive to the second lasing light. A birefringent optical material in the resonance cavity can rotate the polarization direction of at least one of the first lasing light and the second lasing light. An optical axis of the birefringent optical material and an optical axis of the non-linear optical material have an angle between 30 and 60 degrees.

Abstract translation: 腔内倍频激光器件包括第一反射镜和在其中限定谐振腔的第二反射镜，响应于从谐振腔外部接收的激发能产生第一激光的增益介质，非线性 光学材料以响应于第一激光发光而产生第二激光。 第二激光和第一激光具有不同的频率。 第一个反射镜反射了第一个激光和第二个激光。 第二反射镜反射到第一激光，并且至少部分地透射到第二激光。 谐振腔中的双折射光学材料可旋转第一激光和第二激光的至少一个的偏振方向。 双折射光学材料的光轴和非线性光学材料的光轴具有30至60度的角度。

公开(公告)号：US07048607B1

公开(公告)日：2006-05-23

申请号：US09583512

申请日：2000-05-31

Applicant: Li Wu ,  Sourabh Mishra ,  Young J. Paik ,  Satyasrayan Kumaraswamy ,  Robert Lum ,  Chiu Chan ,  David Groechel

Inventor： Li Wu ,  Sourabh Mishra ,  Young J. Paik ,  Satyasrayan Kumaraswamy ,  Robert Lum ,  Chiu Chan ,  David Groechel

IPC: B24B7/22 ,  B24B49/00

CPC classification number: B24B37/042 ,  B24B37/105

Abstract: Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.

Abstract translation: 通常，用于处理衬底的方法和装置。 在一个实施例中，该方法提供至少第一基底和抛光材料之间的第一相对运动。 在至少第二基板和抛光材料之间提供第二相对运动。 相对运动方向的变化使用于将抛光材料返回到产生均匀抛光结果的状态的调节程序之间的间隔延长。

公开(公告)号：US06468136B1

公开(公告)日：2002-10-22

申请号：US09606666

申请日：2000-06-30

Applicant: Robert T. Lum ,  David W. Groechel ,  Li Wu ,  Chiu Chan

Inventor： Robert T. Lum ,  David W. Groechel ,  Li Wu ,  Chiu Chan

IPC: B24B100

CPC classification number: B24B37/24 ,  B24B37/042 ,  B24B37/32

Abstract: Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.

Abstract translation: 通过采用具有大于约85硬度的机械硬度的保持环和相对柔软的抛光垫，进行钨CMP的改进的对准标记完整性和降低的边缘残余。 本发明的实施例包括使用载体的CMP进行导电，该载体包括另外在CMP期间磨损率小于约1密耳/小时的保持环和硬度小于约60硬度的抛光垫。 合适的保持环材料包括陶瓷，石英，聚合物和纤维增强聚合物。

公开(公告)号：US06432479B1

公开(公告)日：2002-08-13

申请号：US09182955

申请日：1998-10-29

Applicant: Mei Chang ,  Ramanujapuram A. Srinivas ,  Li Wu

Inventor： Mei Chang ,  Ramanujapuram A. Srinivas ,  Li Wu

IPC: C23C1634

Abstract: Method for passivating a layer of titanium that has been deposited on a substrate in a reaction chamber to coat the titanium thereby reducing the likelihood of contamination by byproducts of the deposition process or ambient oxygen or similar reactants. The method includes adding a flow of hydrogen and a flow of nitrogen to the chamber. The flows of hydrogen and nitrogen are approximately 800 sccm and continue for approximately 10-30 seconds respectively. The method may further comprise the step of forming a nitrogen plasma in the chamber for approximately 10 seconds wherein such case the flows of hydrogen and nitrogen continue for approximately 8 seconds respectively. The plasma is formed by applying RF power to an electrode located within said chamber or by a remote plasma source and channeled to said reactor chamber. Alternately, the passivation layer may be formed just by using a nitrogen plama alone for approximately 10-30 seconds at the same RF power level. The plasma in either case may further comprise hydrogen and argon and the layer of titanium has been deposited by CVD.