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    System and method for photolithography in semiconductor manufacturing
    22.
    发明授权
    System and method for photolithography in semiconductor manufacturing 有权
    半导体制造中的光刻系统和方法

    公开(公告)号：US07371671B2

    公开(公告)日：2008-05-13

    申请号：US11050312

    申请日：2005-02-03

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    IPC: H01L21/3205 ,  H01L21/4763

    CPC classification number: H01L21/76802 ,  H01L21/31144

    Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

    Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

    Method of forming a fine pattern
    23.
    发明申请
    Method of forming a fine pattern 审中-公开
    形成精细图案的方法

    公开(公告)号：US20070264598A1

    公开(公告)日：2007-11-15

    申请号：US11416263

    申请日：2006-05-01

    Applicant: Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

    IPC: G03F7/20

    CPC classification number: G03F7/38 ,  G03F7/095

    Abstract: A process of forming a fine pattern including forming a first photoresist layer over a first layer of a semiconductor device. Portions of the first photoresist layer are exposed causing a photochemical reaction therein. Prior to developing the first photoresist layer, a second photoresist layer is formed over the first photoresist layer, and wherein at least one of the first photoresist layer and second photoresist layer comprises a photo base generator.

    Abstract translation: 一种形成精细图案的方法，包括在半导体器件的第一层上形成第一光致抗蚀剂层。 暴露第一光致抗蚀剂层的部分，导致其中的光化学反应。 在显影第一光致抗蚀剂层之前，在第一光致抗蚀剂层之上形成第二光致抗蚀剂层，并且其中第一光致抗蚀剂层和第二光致抗蚀剂层中的至少一个包括光源发生器。

    Megasonic immersion lithography exposure apparatus and method
    24.
    发明申请
    Megasonic immersion lithography exposure apparatus and method 有权
    超声波浸没式光刻曝光装置及方法

    公开(公告)号：US20060028626A1

    公开(公告)日：2006-02-09

    申请号：US10910480

    申请日：2004-08-03

    Applicant: Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    Inventor： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    IPC: G03B27/52

    CPC classification number: G03F7/70341

    Abstract: A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer. An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

    Abstract translation: 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

    Patterning process and photoresist with a photodegradable base
    25.
    发明授权
    Patterning process and photoresist with a photodegradable base 有权
    图案化工艺和光致抗蚀剂，具有可光降解基材

    公开(公告)号：US08658344B2

    公开(公告)日：2014-02-25

    申请号：US13534961

    申请日：2012-06-27

    Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/029 ,  G03F7/20 ,  G03F7/32

    CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

    Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

    Abstract translation: 本文公开了抗蚀剂材料和使用抗蚀剂材料的方法。 一种示例性方法包括在衬底上形成抗蚀剂层，其中抗蚀剂层包括聚合物，光致酸产生剂，电子受体和可光降解的碱; 执行曝光处理，其用辐射曝光抗蚀剂层的一部分，其中光可降解碱在曝光过程中耗尽抗蚀剂层的曝光部分; 并对抗蚀剂层进行显影处理。

    PHOTORESIST AND PATTERNING PROCESS
    28.
    发明申请
    PHOTORESIST AND PATTERNING PROCESS 有权
    光电和绘图工艺

    公开(公告)号：US20110070542A1

    公开(公告)日：2011-03-24

    申请号：US12562761

    申请日：2009-09-18

    Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

    Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer

    Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分

    Method for forming a lithography pattern
    30.
    发明授权
    Method for forming a lithography pattern 有权
    光刻图案的形成方法

    公开(公告)号：US07482280B2

    公开(公告)日：2009-01-27

    申请号：US11426233

    申请日：2006-06-23

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    IPC: H01L21/302 ,  G03F7/00

    CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086

    Abstract: A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.

    Abstract translation: 光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。 在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

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