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37 条记录 (耗时 0.031 秒)

    Light-emitting device having a patterned surface
    21.
    发明授权
    Light-emitting device having a patterned surface 有权
    具有图案化表面的发光器件

    公开(公告)号：US08633501B2

    公开(公告)日：2014-01-21

    申请号：US12646553

    申请日：2009-12-23

    申请人： Chen Ou ,  Chiu-Lin Yao

    发明人： Chen Ou ,  Chiu-Lin Yao

    IPC分类号： H01L29/207

    CPC分类号： H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

    摘要： The disclosure provides a light-emitting device comprising a substrate, an intermediate layer formed on the substrate, a first doped semiconductor layer with first conductivity-type formed on the intermediate layer, a second doped semiconductor layer with second conductivity-type formed on the first doped semiconductor layer, an active layer formed between the first doped semiconductor layer and the second doped semiconductor layer, and a patterned surface having a plurality of ordered pattern units; wherein the patterned surface is substantially not parallel to the corresponding region of the surface of the active layer.

    摘要翻译： 本发明提供一种发光器件，其包括衬底，形成在衬底上的中间层，在中间层上形成的具有第一导电型的第一掺杂半导体层，在第一衬底上形成的具有第二导电类型的第二掺杂半导体层 形成在第一掺杂半导体层和第二掺杂半导体层之间的有源层和具有多个有序图案单元的图案化表面; 其中所述图案化表面基本上不平行于所述有源层的表面的相应区域。

    Light-emitting device and manufacturing method thereof
    22.
    发明授权
    Light-emitting device and manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US08492780B2

    公开(公告)日：2013-07-23

    申请号：US12703964

    申请日：2010-02-11

    申请人： Chen Ke Hsu ,  Win Jim Su ,  Chia-Ming Chuang ,  Chen Ou

    发明人： Chen Ke Hsu ,  Win Jim Su ,  Chia-Ming Chuang ,  Chen Ou

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L33/20

    摘要： A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

    摘要翻译： 提供一种发光器件及其制造方法。 制造发光器件的方法包括：提供具有第一主表面和第二主表面的衬底; 在所述第一主表面上形成多个发光堆叠; 在每个发光堆上形成蚀刻保护层; 通过基板上的不连续激光束形成多个孔; 蚀刻多个孔; 并且沿着所述多个孔切割所述基板以形成发光器件。 发光器件具有衬底，其中衬底的侧壁包括具有基本平坦表面的第一区域和具有基本纹理表面的第二区域。

    Light-emitting device
    23.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08405106B2

    公开(公告)日：2013-03-26

    申请号：US12753551

    申请日：2010-04-02

    申请人： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

    发明人： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

    摘要： A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.

    摘要翻译： 一种发光器件，包括：具有第一导电类型半导体层的发光层叠层，形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层，其中， 第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分，所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分 导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

    Semiconductor light-emitting device having stacked transparent electrodes
    24.
    发明授权
    Semiconductor light-emitting device having stacked transparent electrodes 有权
    具有堆叠的透明电极的半导体发光器件

    公开(公告)号：US08293382B2

    公开(公告)日：2012-10-23

    申请号：US12078375

    申请日：2008-03-31

    申请人： Chen Ou ,  Chen-Ke Hsu

    发明人： Chen Ou ,  Chen-Ke Hsu

    IPC分类号： B32B9/00

    CPC分类号： H01L33/42 ,  H01L33/14 ,  Y10T428/265

    摘要： The luminous element includes a luminescence lamination, a second transparent oxidative conducting layer and a composite conducting layer. The composite conducting layer includes first transparent oxidative conducting layer and a metal layer. The second transparent oxidative conducting layer is positioned between the metal layer and luminescence lamination the second transparent oxidative conducting layer forms good ohmic contact with the luminous element and with metal layer. Thus, the metal layer will not be influenced by interfusion so as to maintain good light transmissivity and raise luminous efficiency of luminous element.

    摘要翻译： 发光元件包括发光层压，第二透明氧化导电层和复合导电层。 复合导电层包括第一透明氧化导电层和金属层。 第二透明氧化导电层位于金属层和发光层之间，第二透明氧化导电层与发光元件和金属层形成良好的欧姆接触。 因此，金属层不会受到界面影响，从而保持良好的透光率并提高发光元件的发光效率。

    Light Mixing LED
    26.
    发明申请
    Light Mixing LED 审中-公开
    光混合LED

    公开(公告)号：US20060006375A1

    公开(公告)日：2006-01-12

    申请号：US11162562

    申请日：2005-09-14

    申请人： Chen Ou ,  Chen-Ke Hsu

    发明人： Chen Ou ,  Chen-Ke Hsu

    IPC分类号： H01L29/06

    CPC分类号： H01L33/08

    摘要： A light mixing LED includes a first active layer containing In laminated adjacent to an n-type nitride-based semiconductor stack layer, a second active layer containing In laminated adjacent to a p-type nitride-based semiconductor stack layer, and a tunnelable barrier layer formed between the first active layer and the second active layer.

    摘要翻译： 光混合LED包括：与n型氮化物基半导体堆叠层相邻层叠的包含In的第一有源层，与p型氮化物类半导体堆叠层相邻层叠的包含In的第二有源层和可隧道势垒层 形成在第一有源层和第二有源层之间。

    High-efficiency light-emitting device and manufacturing method thereof
    30.
    发明授权
    High-efficiency light-emitting device and manufacturing method thereof 有权
    高效发光元件及其制造方法

    公开(公告)号：US08994052B2

    公开(公告)日：2015-03-31

    申请号：US13161835

    申请日：2011-06-16

    申请人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    发明人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    IPC分类号： H01L33/00 ,  H01L33/58 ,  H01L33/10 ,  H01L33/22

    CPC分类号： H01L33/10 ,  H01L33/22

    摘要： A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.

    摘要翻译： 发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙，其中所述第二半导体层中的所述第一区域外部的区域为空 并且第一区域的面积比顶视图中的第一区域的面积小，并且第一衬垫的面积在俯视图中小于第二半导体层的面积，并且从有源层发射的光为 从与第一半导体层相对的第二半导体层的顶表面提取。