Light-emitting apparatus
    2.
    发明申请
    Light-emitting apparatus 审中-公开
    发光装置

    公开(公告)号:US20070200493A1

    公开(公告)日:2007-08-30

    申请号:US11581439

    申请日:2006-10-17

    IPC分类号: H01J1/62 H01J63/04

    摘要: The light-emitting apparatus comprises a substrate, a first semiconductor layer formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light-emitting layer, a first transparent conductive oxide layer formed on the second semiconductor layer, a reflective metal layer form on the transparent conductive oxide layer, and a first electrode formed on the reflective metal layer; characterized in that the first transparent conductive oxide layer is formed with a plurality of cavities on the interface between the first transparent conductive oxide layer and the reflective metal layer for improving the adhesion strength therebetween.

    摘要翻译: 发光装置包括基板,形成在基板上的第一半导体层,形成在第一半导体层上的发光层,形成在发光层上的第二半导体层,形成在第一半导体层上的第一透明导电氧化物层 所述第二半导体层,在所述透明导电氧化物层上形成反射金属层,以及形成在所述反射金属层上的第一电极; 其特征在于,所述第一透明导电氧化物层在所述第一透明导电氧化物层和所述反射金属层之间的界面上形成有多个空腔,以改善其间的粘合强度。

    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US08405106B2

    公开(公告)日:2013-03-26

    申请号:US12753551

    申请日:2010-04-02

    IPC分类号: H01L33/00

    摘要: A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.

    摘要翻译: 一种发光器件,包括:具有第一导电类型半导体层的发光层叠层,形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层,其中, 第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分,所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分 导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

    Light emitting diode having an insulating substrate
    4.
    发明授权
    Light emitting diode having an insulating substrate 有权
    具有绝缘基板的发光二极管

    公开(公告)号:US06936860B2

    公开(公告)日:2005-08-30

    申请号:US10063822

    申请日:2002-05-16

    摘要: An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.

    摘要翻译: LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层,所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20100213493A1

    公开(公告)日:2010-08-26

    申请号:US12753551

    申请日:2010-04-02

    IPC分类号: H01L33/42 H01L33/46 H01L33/60

    摘要: A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.

    摘要翻译: 一种发光器件,包括:具有第一导电类型半导体层的发光层叠层,形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层,其中, 第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分,所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分 导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

    Nitride-based light-emitting device
    7.
    发明授权
    Nitride-based light-emitting device 有权
    基于氮化物的发光器件

    公开(公告)号:US08536565B2

    公开(公告)日:2013-09-17

    申请号:US13046490

    申请日:2011-03-11

    IPC分类号: H01L33/00

    摘要: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

    摘要翻译: 氮化物系发光器件包括基板和在该基板上形成的多个层,其顺序如下:由氮形成的基于氮化物的缓冲层,第一III族元素和任选的第二III族元素, 第一氮化物基半导体层,发光层和第二氮化物基半导体层。

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号:US20100200885A1

    公开(公告)日:2010-08-12

    申请号:US12703964

    申请日:2010-02-11

    IPC分类号: H01L33/00

    摘要: A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

    摘要翻译: 提供一种发光器件及其制造方法。 制造发光器件的方法包括:提供具有第一主表面和第二主表面的衬底; 在所述第一主表面上形成多个发光堆叠; 在每个发光堆上形成蚀刻保护层; 通过基板上的不连续激光束形成多个孔; 蚀刻多个孔; 并且沿着所述多个孔切割所述基板以形成发光器件。 发光器件具有衬底,其中衬底的侧壁包括具有基本平坦表面的第一区域和具有基本纹理表面的第二区域。