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    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE
    22.
    发明申请
    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE 审中-公开
    包括化学冲洗的光刻工艺

    公开(公告)号：US20080280230A1

    公开(公告)日：2008-11-13

    申请号：US11747124

    申请日：2007-05-10

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03C5/00

    CPC classification number: G03F7/40 ,  G03F7/38

    Abstract: The present disclosure provides a plurality of methods of performing a lithography process. In one embodiment, a substrate including a layer of photoresist is provided. The layer of photoresist is exposed. The exposed layer of photoresist is developed. A chemical rinse solution is applied to the developed photoresist. The chemical rinse solution includes an alcohol base chemical. The substrate is spun dry.

    Abstract translation: 本公开提供了执行光刻工艺的多种方法。 在一个实施例中，提供了包括光致抗蚀剂层的基板。 曝光该光致抗蚀剂层。 曝光的光致抗蚀剂层被开发出来。 将化学冲洗溶液施加到显影的光致抗蚀剂上。 化学冲洗液包括醇基化学品。 将基材旋转干燥。

    Method and material for forming high etch resistant double exposure patterns
    25.
    发明授权
    Method and material for forming high etch resistant double exposure patterns 有权
    用于形成高耐蚀刻双曝光图案的方法和材料

    公开(公告)号：US08153350B2

    公开(公告)日：2012-04-10

    申请号：US12205509

    申请日：2008-09-05

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  G03F7/405

    Abstract: The present invention includes a lithography method comprising forming a first patterned resist layer including at least one opening therein over a substrate. A protective layer is formed on the first patterned resist layer and the substrate whereby a reaction occurs at the interface between the first patterned resist layer and the protective layer to form a reaction layer over the first patterned resist layer. The non-reacted protective layer is then removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

    Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化抗蚀剂层。 在第一图案化抗蚀剂层和基板上形成保护层，由此在第一图案化抗蚀剂层和保护层之间的界面处发生反应，以在第一图案化抗蚀剂层上形成反应层。 然后除去未反应的保护层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

    System and method for photolithography in semiconductor manufacturing
    26.
    发明授权
    System and method for photolithography in semiconductor manufacturing 有权
    半导体制造中的光刻系统和方法

    公开(公告)号：US07371671B2

    公开(公告)日：2008-05-13

    申请号：US11050312

    申请日：2005-02-03

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    IPC: H01L21/3205 ,  H01L21/4763

    CPC classification number: H01L21/76802 ,  H01L21/31144

    Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

    Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

    Method of forming a fine pattern
    27.
    发明申请
    Method of forming a fine pattern 审中-公开
    形成精细图案的方法

    公开(公告)号：US20070264598A1

    公开(公告)日：2007-11-15

    申请号：US11416263

    申请日：2006-05-01

    Applicant: Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

    IPC: G03F7/20

    CPC classification number: G03F7/38 ,  G03F7/095

    Abstract: A process of forming a fine pattern including forming a first photoresist layer over a first layer of a semiconductor device. Portions of the first photoresist layer are exposed causing a photochemical reaction therein. Prior to developing the first photoresist layer, a second photoresist layer is formed over the first photoresist layer, and wherein at least one of the first photoresist layer and second photoresist layer comprises a photo base generator.

    Abstract translation: 一种形成精细图案的方法，包括在半导体器件的第一层上形成第一光致抗蚀剂层。 暴露第一光致抗蚀剂层的部分，导致其中的光化学反应。 在显影第一光致抗蚀剂层之前，在第一光致抗蚀剂层之上形成第二光致抗蚀剂层，并且其中第一光致抗蚀剂层和第二光致抗蚀剂层中的至少一个包括光源发生器。

    Exposure method and apparatus for immersion lithography
    28.
    发明申请
    Exposure method and apparatus for immersion lithography 有权
    浸渍光刻的曝光方法和装置

    公开(公告)号：US20070085034A1

    公开(公告)日：2007-04-19

    申请号：US11251330

    申请日：2005-10-14

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

    IPC: G03F7/20

    CPC classification number: G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

    Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

    Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

    Apparatus and methods for immersion lithography
    29.
    发明申请
    Apparatus and methods for immersion lithography 审中-公开
    浸没光刻设备和方法

    公开(公告)号：US20070058263A1

    公开(公告)日：2007-03-15

    申请号：US11225268

    申请日：2005-09-13

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G02B1/06

    CPC classification number: G03F7/70341

    Abstract: The present disclosure provides an immersion lithography system. The system includes: an imaging lens having a front surface, a substrate stage positioned underlying the front surface of the imaging lens, and an immersion fluid retaining structure configured to hold a first fluid at least partially filling a space between the front surface and a substrate on the substrate stage. The immersion fluid retaining structure further comprises at least one of: a first inlet positioned proximate the imaging lens and coupled to a vacuum pump system, the first inlet operable to provide the first fluid to the space between the front surface and the substrate, and a second inlet positioned proximate the imaging lens and operable to provide a second fluid on the substrate.

    Abstract translation: 本公开提供了一种浸没式光刻系统。 该系统包括：成像透镜，其具有前表面，位于成像透镜的前表面下方的基底台;以及浸没流体保持结构，其被配置为保持至少部分地填充前表面和基底之间的空间的第一流体 在衬底上。 浸没流体保持结构还包括以下至少一个：位于成像透镜附近并联接到真空泵系统的第一入口，第一入口可操作以将第一流体提供到前表面和基底之间的空间，以及 第二入口位于成像透镜附近并可操作以在基底上提供第二流体。

    Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
    30.
    发明申请
    Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication 审中-公开

    公开(公告)号：US20060281320A1

    公开(公告)日：2006-12-14

    申请号：US11401690

    申请日：2006-04-11

    Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

    Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

    IPC: H01L21/311

    CPC classification number: G03F7/405

    Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

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