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272 条记录 (耗时 0.034 秒)

    Exposure method and apparatus for immersion lithography
    1.
    发明申请
    Exposure method and apparatus for immersion lithography 有权
    浸渍光刻的曝光方法和装置

    公开(公告)号：US20070085034A1

    公开(公告)日：2007-04-19

    申请号：US11251330

    申请日：2005-10-14

    申请人： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

    发明人： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

    摘要： A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

    摘要翻译： 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

    System and method for photolithography in semiconductor manufacturing
    2.
    发明申请
    System and method for photolithography in semiconductor manufacturing 有权
    半导体制造中的光刻系统和方法

    公开(公告)号：US20060172520A1

    公开(公告)日：2006-08-03

    申请号：US11050312

    申请日：2005-02-03

    申请人： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

    发明人： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

    IPC分类号： H01L21/4763 ,  H01L21/3205

    CPC分类号： H01L21/76802 ,  H01L21/31144

    摘要： A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

    摘要翻译： 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

    Megasonic immersion lithography exposure apparatus and method
    4.
    发明授权
    Megasonic immersion lithography exposure apparatus and method 有权
    超声波浸没式光刻曝光装置及方法

    公开(公告)号：US07224427B2

    公开(公告)日：2007-05-29

    申请号：US10910480

    申请日：2004-08-03

    申请人： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    发明人： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70341

    摘要： A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer.An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

    摘要翻译： 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

    Megasonic immersion lithography exposure apparatus and method
    5.
    发明申请
    Megasonic immersion lithography exposure apparatus and method 有权
    超声波浸没式光刻曝光装置及方法

    公开(公告)号：US20060028626A1

    公开(公告)日：2006-02-09

    申请号：US10910480

    申请日：2004-08-03

    申请人： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    发明人： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70341

    摘要： A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer. An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

    摘要翻译： 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

    Immersion lithography apparatus and methods
    7.
    发明授权
    Immersion lithography apparatus and methods 有权
    浸渍光刻设备及方法

    公开(公告)号：US07986395B2

    公开(公告)日：2011-07-26

    申请号：US11427421

    申请日：2006-06-29

    申请人： Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

    发明人： Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

    IPC分类号： G03B27/42

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.

    摘要翻译： 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 以及适于清洁光刻设备的清洁模块。 清洁模块选自超声波单元，洗涤器，流体射流，静电清洁器及其组合。

    Method of forming high etch resistant resist patterns
    9.
    发明申请
    Method of forming high etch resistant resist patterns 有权
    形成高耐腐蚀抗蚀剂图案的方法

    公开(公告)号：US20070048675A1

    公开(公告)日：2007-03-01

    申请号：US11209684

    申请日：2005-08-24

    申请人： Ching-Yu Chang ,  Chin-Hsiang Lin

    发明人： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC分类号： G03F7/26

    CPC分类号： G03F7/40 ,  G03F7/405

    摘要： A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

    摘要翻译： 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

    Photoresist materials and photolithography processes
    10.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号：US08848163B2

    公开(公告)日：2014-09-30

    申请号：US13050251

    申请日：2011-03-17

    申请人： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    发明人： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    IPC分类号： G03B27/52 ,  G03B27/42

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

    摘要： A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    摘要翻译： 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。