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公开(公告)号:US20170302182A1
公开(公告)日:2017-10-19
申请号:US15491307
申请日:2017-04-19
Applicant: DENSO CORPORATION
Inventor: Hiroshi SHIMIZU , Mitsunori KIMURA , Kengo MOCHIKI , Yuu YAMAHIRA , Tetsuya MATSUOKA , Kazuma FUKUSHIMA , Yasuyuki OHKOUCHI
IPC: H02M3/158 , H01L29/20 , H01L25/07 , H01L29/16 , H01L29/861 , H01L29/739
CPC classification number: H02M3/158 , H01L25/07 , H01L29/1608 , H01L29/2003 , H01L29/7393 , H01L29/861 , H02M1/088 , H02M7/5387
Abstract: A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.
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公开(公告)号:US20170301662A1
公开(公告)日:2017-10-19
申请号:US15488818
申请日:2017-04-17
Applicant: DENSO CORPORATION
Inventor: Mitsunori KIMURA , Hiroshi SHIMIZU , Kengo MOCHIKI , Yasuyuki OHKOUCHI , Yuu YAMAHIRA , Tetsuya MATSUOKA , Kazuma FUKUSHIMA
IPC: H01L25/18 , H01L23/495 , H01L23/433 , H01L23/00 , H01L25/07 , H01L25/11 , H01L23/473
Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.
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公开(公告)号:US20170301614A1
公开(公告)日:2017-10-19
申请号:US15491028
申请日:2017-04-19
Applicant: DENSO CORPORATION
Inventor: Mitsunori KIMURA , Hiroshi SHIMIZU , Kengo MOCHIKI , Yasuyuki OHKOUCHI , Yuu YAMAHIRA , Tetsuya MATSUOKA , Kazuma FUKUSHIMA
CPC classification number: H01L23/49568 , H01L23/3107 , H01L23/3114 , H01L23/4012 , H01L23/473 , H01L23/49562 , H01L23/49575 , H01L24/32 , H01L25/07 , H01L27/0623 , H01L2224/32245 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/13055 , H01L2924/13091 , H02M1/088 , H02M7/003 , H02M7/537 , H02M2001/327 , H02P27/06
Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.
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公开(公告)号:US20160241155A1
公开(公告)日:2016-08-18
申请号:US15013503
申请日:2016-02-02
Applicant: DENSO CORPORATION
Inventor: Kazuya TAKEUCHI , Tetsuya MATSUOKA , Ryota TANABE
CPC classification number: H02M7/003 , H05K7/20263 , H05K7/20927
Abstract: A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged. The capacitor includes a capacitor element which includes a dielectric body and a metal layer formed on a surface of the dielectric body, an electrode part connected to the metal layer and a bus bar connected to the electrode part. Part of the bus bar is interposed in the arranging direction between the heat dissipation member and the capacitor element.
Abstract translation: 电力转换装置包括用于冷却电容器的电容器和散热构件。 在布置电容器和散热构件的布置方向上按压电容器和散热构件。 电容器包括电容器元件,其包括电介质体和形成在电介质体的表面上的金属层,连接到金属层的电极部分和连接到电极部分的汇流条。 汇流条的一部分插入在散热构件和电容器元件之间的布置方向上。
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公开(公告)号:US20140119087A1
公开(公告)日:2014-05-01
申请号:US14068271
申请日:2013-10-31
Applicant: DENSO CORPORATION
Inventor: Tetsuya MATSUOKA , Hiromi ICHIJO , Naoki HIRASAWA
IPC: H02M7/5387
CPC classification number: H02M7/003
Abstract: A power converter including a plurality of semiconductor modules each having a body including semiconductor elements, where the body is provided with control terminals, a pair of input terminals, and at least two output terminals protruding from the body. The output terminals protruding from the bodies of the respective semiconductor modules are grouped into a plurality of output terminal groups each formed of three output terminals belonging to at least two different semiconductor modules. The power converter further includes a control circuit board electrically connected to the control terminals and configured to turn on and off the respective semiconductor elements of the respective semiconductor modules so as to convert a DC voltage applied to the pair of input terminals of each semiconductor module into a three-phase AC voltage to be outputted from each output terminal group.
Abstract translation: 一种功率转换器,包括多个半导体模块,每个半导体模块具有包括半导体元件的主体,其中主体设置有控制端子,一对输入端子以及从主体突出的至少两个输出端子。 从各个半导体模块的主体突出的输出端子被分组成多个输出端子组,每个输出端子组由属于至少两个不同的半导体模块的三个输出端子形成。 电源转换器还包括控制电路板,电连接到控制端子并且被配置为接通和关断各个半导体模块的各个半导体元件,以将施加到每个半导体模块的一对输入端子的DC电压转换成 从各输出端子组输出的三相交流电压。
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