Abstract:
Circuitry for producing a transition detection signal of adequate and optimized duration is disclosed. A transition detection circuit is associated with each of the input terminals from which transitions are to initiate an operating cycle, such as precharge and equilibration in a memory access cycle. Each transition detection circuit produces, responsive to a logic transition at its associated terminal, a transition detection pulse. Those transition detection circuits which produce only brief transition detection pulses are coupled to a centralized summing circuit. The summing circuit generates the transition detection circuit from the logical combination of the transition detection circuits, and includes a delay circuit to lengthen the brief incoming transition detection pulse to the desired duration. In this way, a single placement of the summing circuit can be used to optimize the transition detection pulse duration for initiation of the operating cycle of the integrated circuit.
Abstract:
According to the present invention, integrated circuitry provides for the ability to selectively introduce delays into the timing of the integrated circuit, without the expense and time associated with methods used in the prior art. As a minimum, a fuse element having at least one fuse and a transistor element having at least one transistor are placed in parallel to each other between a voltage supply of a gate of the integrated circuit and a corresponding voltage supply of the integrated circuit. When the fuse element is intact, the fuse element provides a relatively low resistance path from the voltage supply of the gate and the corresponding voltage supply of the integrated circuit. However, upon blowing the fuse element, this low resistance path is no longer available. An increased resistance path through the transistor element must be used, and the integrated circuit is slowed down accordingly. The amount of delay introduced to the delay element is a function of the values of the transistors in the transistor element.
Abstract:
A memory system comprising a memory array having at least two pairs of data lines, first and second data lines corresponding to columns in the memory array. The memory array also includes two level shifter circuits, a first shifter circuit connected to the first lines and a second level shifter circuit connected to the second data lines, wherein the level shifter circuits produce output signals and may be enabled and disabled. A selection signal is used to selectively enable and disable the level shifter circuits, wherein one pair of data lines may be selected. An amplification circuit is connected to the level shifters for amplifying the output signals from the level shifter circuits, and a logic circuit is used to generate logic output signals in response to the amplified output signals from the amplification circuit.
Abstract:
Difference flag logic suitable for use in a FIFO memory is modified to quickly generate FIFO flag status without the use of subtractor circuitry. Bit comparators, which together comprise a magnitude comparator, determine if a first bit is less than, equal to, or greater than a second bit, and operate to produce a composite comparator output. The subtractor function is replaced by offsetting the read count from the write count by a value equal to the desired FIFO flag value. In addition, control of selected bits, such as the most significant bits (MSBs), of the numbers is included and may be used as necessary to avoid a wrap-around condition.
Abstract:
A static random access memory provides interconnection of local wordlines and bit lines to share charge during bulk write operations. Prior to a bulk write cycle, a bit line for each memory cell is driven to a first voltage level. Subsequently, the bit lines and the local wordlines are interconnected for sharing charge between the bit lines and the local wordlines. Next, the bit lines are disconnected from the local wordlines and the bit lines are driven to a second voltage level while the local wordlines are driven to the first voltage level to address the memory cells. Then the bit lines and local wordlines are reconnected to distribute charge from the local wordlines to the bit lines. Lastly, the bit lines are again disconnected from the local wordlines and driven to the first voltage level preparatory to resuming normal operation.
Abstract:
An integrated circuit, such as a memory, having an internal data bus and circuitry for precharging the same is disclosed. Each data conductor in said data bus is associated with a dummy data conductor, which is driven to a complementary logic state from that of its associated data conductor. During precharge and equilibration at the beginning of a cycle, initiated by an address transition detection or by a clock signal, each data conductor is connected to its dummy data conductor so that the data conductor is precharged to a midlevel by way of charge sharing. Also during precharge and equilibration, the data driver is placed in a high impedance state by the sense amplifier output nodes both going to the same logic level. This midlevel precharge allows for faster switching, and reduced instantaneous current, than obtained for rail-to-rail switching. Self-biasing circuits are connected to each of the data conductors and dummy data conductors, to prevent floating conditions during long precharge and equilibration periods. The output stage receiving the data conductor is preferably disabled during precharge and equilibration, so that the data conductor can be precharged near the trip level of the output stage, without risking output stage oscillations. A termination is also provided for the dummy data conductor, matching the load presented by the output stage to the data conductor, so that the data conductor and its dummy data conductor are at complementary states even during transient conditions.
Abstract:
An integrated circuit memory is disclosed which has its memory array divided into blocks, or sub-arrays. Between each sub-array is placed a row line repeater which communicates the row line from the row decoder, or from a prior sub-array, into the next sub-array. The row line repeaters are controlled according to a portion of the column address so that, after the entire selected row has been energized, those row line repeaters which are not associated with the selected sub-array will de-energize the row line at their output. The row line repeaters each include a latch, so that the row line repeater which is associated with the selected sub-array will maintain the selected row line energized. Various embodiments of the row line repeater circuit are disclosed. Further control of the row line repeaters from a power-on reset circuit is also disclosed. A dummy row line is also disclosed, which emulates an actual row line so that the time at which the selected row has been fully energized is more closely known. The dummy row line thus can control the time at which the unselected row line repeaters de-energize their outputs.
Abstract:
In the preferred embodiment of the invention, a first-in, first-out (FIFO) memory includes flag generation circuitry which utilizes a write clock counter and a read clock counter to provide the number of write clock pulses received since the previous write reset signal and the number of read clock pulses received by the FIFO since the previous read reset signal. A subtractor circuit subtracts the number of read clock pulses from the number of write clock pulses, and this difference is compared in a comparator circuit to determine if the difference is greater than a preset value. This determination provides the information as to the relative fullness of the FIFO. Specific flag values are user-programmed and are stored electronically as binary numbers in registers. The connection between individual subtractor circuits and individual comparator circuits for making the comparison is performed by a program select decoder which utilizes the difference output of the subtractor circuit and the flag program value.
Abstract:
An output driver arrangement for an integrated circuit having multiple output terminals is disclosed. Each of the output drivers is a push-pull driver, with the gates of the pull-up and pull-down transistors each controlled by a logic circuit; the logic circuits perform a logical combination of the data to be presented and an output disable signal. In order to control the switching speed of the outputs, and thus to reduce induced noise, each of the logic circuits share a resistor network at their bias nodes. For example, each of the logic circuits controlling the pull-up device share a resistor network for bias from V.sub.cc, and a resistor network for bias to ground; similarly, each of the logic circuits controlling the pull-down device share a resistor network for bias from V.sub.cc and a resistor network for bias to ground. Various arrangements including fuses may be used to allow selection of the resistance value of each of the networks, according to the performance of the circuit or in response to product demand.
Abstract:
The synchronization circuit of the preferred embodiment is a T flip flop which has a first output which changes state on the leading edge of the clock signal, and a second output which changes state on the trailing edge of the clock signal. The T flip flop has an exclusive OR gate input in which the T input is combined with the first output. The output of the exclusive OR is coupled to an internal node when the clock signal is at a first logic state, and isolated from the internal node when the clock signal is at a second logic state. The internal node is coupled to the first output when the clock signal is at the second logic sate and isolated from the internal node when the clock signal is at the first logic state. The first output signal is coupled to the second output signal when the clock signal is at the first logic state, and isolated from the second output terminal when the clock signal is at the second logic state.