公开(公告)号：US07851064B2

公开(公告)日：2010-12-14

申请号：US12031493

申请日：2008-02-14

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell ,  Larry Alan Nesbit

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell ,  Larry Alan Nesbit

IPC分类号： B32B9/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/06 ,  C01B2202/22 ,  C01B2202/34 ,  H01J1/3044 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/843 ,  Y10T428/30

摘要： Methods for synthesizing carbon nanotubes and structures formed thereby, includes forming carbon nanotubes on a plurality of synthesis sites supported by a first substrate, interrupting nanotube synthesis, mounting a free end of each carbon nanotube to a second substrate, and removing the first substrate. Each carbon nanotube is capped by one of the synthesis sites, to which growth reactants have ready access.

摘要翻译： 合成碳纳米管和由此形成的结构的方法包括在由第一衬底支撑的多个合成位置上形成碳纳米管，中断纳米管合成，将每个碳纳米管的自由端安装到第二衬底上，以及去除第一衬底。 每个碳纳米管被其中一个合成位点封盖，生长反应物可以随时进入。

公开(公告)号：US20080160312A1

公开(公告)日：2008-07-03

申请号：US12031493

申请日：2008-02-14

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger ,  Peter H. Mitchell ,  Larry Alan Nesbit

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger ,  Peter H. Mitchell ,  Larry Alan Nesbit

IPC分类号： B32B9/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/06 ,  C01B2202/22 ,  C01B2202/34 ,  H01J1/3044 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/843 ,  Y10T428/30

摘要： Methods for synthesizing carbon nanotubes and structures formed thereby. The method includes forming carbon nanotubes on a plurality of synthesis sites supported by a first substrate, interrupting nanotube synthesis, mounting a free end of each carbon nanotube to a second substrate, and removing the first substrate. Each carbon nanotube is capped by one of the synthesis sites, to which growth reactants have ready access. As the carbon nanotubes lengthen during resumed nanotube synthesis, access to the synthesis sites remains unoccluded.

摘要翻译： 合成碳纳米管的方法及由此形成的结构。 该方法包括在由第一基板支撑的多个合成位置上形成碳纳米管，中断纳米管合成，将每个碳纳米管的自由端安装到第二基板上，以及去除第一基板。 每个碳纳米管被其中一个合成位点封盖，生长反应物可以随时进入。 由于碳纳米管在恢复纳米管合成过程中延长，所以进入合成位点仍未被排除。

公开(公告)号：US07129097B2

公开(公告)日：2006-10-31

申请号：US10901858

申请日：2004-07-29

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell

IPC分类号： H01L21/00

CPC分类号： H01L21/7685 ,  B82Y10/00 ,  H01L21/32051 ,  H01L21/76838 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53276 ,  H01L51/0048 ,  H01L51/0052 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/778 ,  Y10S977/842 ,  H01L2924/00

摘要： A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nanotube orientation in one sublayer is substantially perpendicular to that of the other layer. The conductive layer sandwich preferably contains one or more additional sublayers of a conductive material, such as a metal. In one embodiment, oriented carbon nanotubes are created by forming a series of parallel surface ridges, covering the top and one side of the ridges with a catalyst inhibitor, and growing carbon nanotubes horizontally from the uncovered vertical sides of the ridges. In another embodiment, oriented carbon nanotubes are grown on the surface of a conductive material in the presence of a directional flow of reactant gases and a catalyst.

公开(公告)号：US07038299B2

公开(公告)日：2006-05-02

申请号：US10732951

申请日：2003-12-11

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell ,  Larry Alan Nesbit

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell ,  Larry Alan Nesbit

IPC分类号： H01L29/12 ,  H01L29/06 ,  H01L21/205 ,  H01L21/64

CPC分类号： H01L51/0512 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/22 ,  C01B2202/34 ,  C30B25/02 ,  C30B29/02 ,  C30B29/605 ,  H01L51/0048 ,  Y10S977/854

摘要： Methods for selecting semiconducting carbon nanotubes from a random collection of conducting and semiconducting carbon nanotubes synthesized on multiple synthesis sites carried by a substrate and structures formed thereby. After an initial growth stage, synthesis sites bearing conducting carbon nanotubes are altered to discontinue synthesis at these specific synthesis sites and, thereby, halt lengthening of the conducting carbon nanotubes. Synthesis sites bearing semiconducting carbon nanotubes are unaffected by the alteration so that semiconducting carbon nanotubes may be lengthened to a greater length than the conducting carbon nanotubes.

摘要翻译： 从由衬底承载的多个合成位点上合成的导电和半导体碳纳米管的随机集合以及由此形成的结构选择半导体碳纳米管的方法。 在初始生长阶段之后，改变承载导电碳纳米管的合成位点，以在这些特定合成位点停止合成​​，从而停止导电碳纳米管的延长。 具有半导体碳纳米管的合成位点不受改变的影响，使得半导体碳纳米管可以被延长到比导电碳纳米管更长的长度。

公开(公告)号：US06583462B1

公开(公告)日：2003-06-24

申请号：US09702338

申请日：2000-10-31

申请人： Toshiharu Furukawa ,  Rajarao Jammy ,  Thomas Kanarsky ,  Jeffrey John Welser ,  David Vaclav Horak ,  Steven John Holmes ,  Mark Charles Hakey

发明人： Toshiharu Furukawa ,  Rajarao Jammy ,  Thomas Kanarsky ,  Jeffrey John Welser ,  David Vaclav Horak ,  Steven John Holmes ,  Mark Charles Hakey

IPC分类号： H01L27108

CPC分类号： H01L27/10864 ,  H01L27/10841 ,  H01L27/10867

摘要： A dynamic random access memory device formed in a substrate having a trench. The trench has a side wall, a top, a lower portion, and a circumference. The device includes a signal storage node including a metallic storage node conductor formed in the lower portion of the trench and isolated from the side wall by a node dielectric and a collar oxide above the node dielectric. Preferably, the trench has an aspect ratio of greater than 50. A buried strap is coupled to the storage node conductor and contacts a portion of the side wall of the trench above the collar oxide. A trench-top dielectric which is formed upon the buried strap has a trench-top dielectric thickness. A signal transfer device includes a first diffusion region extending into the substrate adjacent the portion of the trench side wall contacted by the buried strap, a gate insulator having a gate insulator thickness formed on the trench side wall above the first buried strap, wherein the gate insulator thickness is less than the trench-top dielectric thickness, and a gate conductor formed within the trench upon the trench-top dielectric and adjacent the gate insulator.

摘要翻译： 形成在具有沟槽的衬底中的动态随机存取存储器件。 沟槽具有侧壁，顶部，下部和圆周。 该装置包括信号存储节点，该信号存储节点包括形成在沟槽下部的金属存储节点导体，并通过节点电介质和节点电介质上方的环形氧化物与侧壁隔离。 优选地，沟槽具有大于50的纵横比。掩埋带耦合到存储节点导体并且接触环形氧化物上方的沟槽的侧壁的一部分。 形成在掩埋带上的沟槽电介质具有沟槽顶部的电介质厚度。 信号传送装置包括：第一扩散区域，其延伸到与所述掩埋带接触的所述沟槽侧壁的所述部分相邻的所述衬底;门绝缘体，其具有形成在所述第一掩埋带的上方的所述沟槽侧壁上的栅绝缘体厚度， 绝缘体厚度小于沟槽顶部电介质厚度，以及形成在沟槽顶部电介质并且邻近栅极绝缘体的沟槽内的栅极导体。

公开(公告)号：US07951660B2

公开(公告)日：2011-05-31

申请号：US10703355

申请日：2003-11-07

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Larry Alan Nesbit

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Larry Alan Nesbit

IPC分类号： H01L21/336

CPC分类号： H01L29/66772 ,  H01L21/2807 ,  H01L29/4908

摘要： A method for fabricating a metal-oxide-semiconductor device structure. The method includes introducing a dopant species concurrently into a semiconductor active layer that overlies an insulating layer and a gate electrode overlying the semiconductor active layer by ion implantation. The thickness of the semiconductor active layer, the thickness of the gate electrode, and the kinetic energy of the dopant species are chosen such that the projected range of the dopant species in the semiconductor active layer and insulating layer lies within the insulating layer and a projected range of the dopant species in the gate electrode lies within the gate electrode. As a result, the semiconductor active layer and the gate electrode may be doped simultaneously during a single ion implantation and without the necessity of an additional implant mask.

摘要翻译： 一种制造金属氧化物半导体器件结构的方法。 该方法包括通过离子注入将掺杂剂物质同时引入覆盖在半导体有源层上的绝缘层和栅电极的半导体有源层中。 选择半导体有源层的厚度，栅电极的厚度和掺杂剂物质的动能，使得半导体有源层和绝缘层中的掺杂剂物质的投影范围位于绝缘层内，并且投影 栅电极中的掺杂物种类的范围位于栅电极内。 结果，半导体有源层和栅电极可以在单个离子注入期间同时掺杂，而不需要另外的注入掩模。

公开(公告)号：US07923202B2

公开(公告)日：2011-04-12

申请号：US11831099

申请日：2007-07-31

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III

IPC分类号： G03F7/26

CPC分类号： G03F7/2024 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70425

摘要： A structure and a method for forming the same. The method includes providing a structure which includes (a) a to-be-patterned layer, (b) a photoresist layer on top of the to-be-patterned layer wherein the photoresist layer includes a first opening, and (c) a cap region on side walls of the first opening. A first top surface of the to-be-patterned layer is exposed to a surrounding ambient through the first opening. The method further includes performing a first lithography process resulting in a second opening in the photoresist layer. The second opening is different from the first opening. A second top surface of the to-be-patterned layer is exposed to a surrounding ambient through the second opening.

摘要翻译： 一种结构及其形成方法。 该方法包括提供一种结构，其包括（a）待图案化层，（b）在待图案化层的顶部上的光致抗蚀剂层，其中光致抗蚀剂层包括第一开口，和（c）帽 区域在第一开口的侧壁上。 待图案化层的第一顶表面通过第一开口暴露于周围环境。 该方法还包括执行在光致抗蚀剂层中产生第二开口的第一光刻工艺。 第二个开口与第一个开口不同。 待图案化层的第二顶表面通过第二开口暴露于周围环境。

公开(公告)号：US07691720B2

公开(公告)日：2010-04-06

申请号：US11926661

申请日：2007-10-29

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell ,  Larry Alan Nesbit

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III ,  Peter H. Mitchell ,  Larry Alan Nesbit

IPC分类号： H01L21/76

CPC分类号： H01L51/057 ,  B82Y10/00 ,  H01L51/0048 ,  Y10S977/70 ,  Y10S977/734 ,  Y10S977/742

摘要： Vertical device structures incorporating at least one nanotube and methods for fabricating such device structures by chemical vapor deposition. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad and encased in a coating of a dielectric material. Vertical field effect transistors may be fashioned by forming a gate electrode about the encased nanotubes such that the encased nanotubes extend vertically through the thickness of the gate electrode. Capacitors may be fashioned in which the encased nanotubes and the corresponding catalyst pad bearing the encased nanotubes forms one capacitor plate.

摘要翻译： 结合至少一个纳米管的垂直器件结构和通过化学气相沉积制造这种器件结构的方法。 每个纳米管通过由催化剂垫催化的化学气相沉积生长并且包裹在电介质材料的涂层中。 可以通过围绕封装的纳米管形成栅电极来形成垂直场效应晶体管，使得封装的纳米管垂直延伸穿过栅电极的厚度。 可以形成电容器，其中包裹的纳米管和带有封装的纳米管的相应的催化剂垫片形成一个电容器板。

公开(公告)号：US07607455B2

公开(公告)日：2009-10-27

申请号：US12127975

申请日：2008-05-28

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III

IPC分类号： F16K31/02 ,  F04B17/00

CPC分类号： F15C1/06 ,  F04B43/043 ,  F15C5/00 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0051 ,  F16K2099/0074 ,  F16K2099/0094 ,  Y10T29/49236 ,  Y10T29/49412 ,  Y10T137/2224

摘要： Micro-valves and micro-pumps and methods of fabricating micro-valves and micro-pumps. The micro-valves and micro-pumps include electrically conductive diaphragms fabricated from electrically conductive nano-fibers. Fluid flow through the micro-valves and pumping action of the micro-pumps is accomplished by applying electrostatic forces to the electrically conductive diaphragms.

摘要翻译： 微型阀门和微型泵以及制造微型阀门和微型泵的方法。 微型阀和微型泵包括由导电纳米纤维制成的导电隔膜。 通过微型阀的流体流动和微型泵的泵送作用是通过将静电力施加到导电隔膜来实现的。

公开(公告)号：US07329567B2

公开(公告)日：2008-02-12

申请号：US11180415

申请日：2005-07-13

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Peter H. Mitchell ,  Larry Alan Nesbit

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Peter H. Mitchell ,  Larry Alan Nesbit

IPC分类号： H01L21/335 ,  H01L21/8232

CPC分类号： H01L27/283 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/057 ,  Y10S977/70 ,  Y10S977/707 ,  Y10S977/721 ,  Y10S977/724

摘要： Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.

摘要翻译： 具有由至少一个半导体纳米管限定的沟道区的垂直场效应晶体管以及通过使用间隔物定义的沟道的化学气相沉积来制造这种垂直场效应晶体管的方法。 每个纳米管通过化学气相沉积来生长，该催化剂垫位于位于间隔物和栅电极之间限定的高纵横比通道的基部处的催化剂垫。 每个纳米管在通道中生长，其中垂直取向受限于间隔物的限制。 可以在远离通道的口的间隔件的基部中设置间隙。 通过间隙流过催化剂垫的反应物参与纳米管生长。