READING MEMORY CELLS USING MULTIPLE THRESHOLDS
    21.
    发明申请
    READING MEMORY CELLS USING MULTIPLE THRESHOLDS 有权
    使用多个阈值读取记忆细胞

    公开(公告)号:US20100165730A1

    公开(公告)日:2010-07-01

    申请号:US11995814

    申请日:2007-10-30

    IPC分类号: G11C16/04

    摘要: A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.

    摘要翻译: 一种用于操作存储器(28)的方法包括:通过将从一组标称值中选择的相应模拟输入值写入到存储器的模拟存储器单元(32)中来存储用错误校正码(ECC)编码的数据, 模拟存储单元。 通过执行将模拟存储器单元的模拟输出值与不同的相应读取阈值进行比较的多个读取操作来读取存储的数据,以便为每个模拟存储器单元产生多个比较结果。 读取阈值中的至少两个位于在标称值的集合中彼此相邻的一对标称值之间。 响应于多个比较结果计算软度量。 使用软指标对ECC进行解码,以便提取存储在模拟存储单元中的数据。

    COMBINED DISTORTION ESTIMATION AND ERROR CORRECTION CODING FOR MEMORY DEVICES
    22.
    发明申请
    COMBINED DISTORTION ESTIMATION AND ERROR CORRECTION CODING FOR MEMORY DEVICES 有权
    用于存储器件的组合失真估计和错误校正编码

    公开(公告)号:US20090024905A1

    公开(公告)日:2009-01-22

    申请号:US11996054

    申请日:2007-05-10

    IPC分类号: G11C29/00 G06F11/00

    CPC分类号: G06F11/1072

    摘要: A method for operating a memory device (24) includes encoding data using an Error Correction Code (ECC) and storing the encoded data as first analog values in respective analog memory cells (32) of the memory device. After storing the encoded data, second analog values are read from the respective memory cells of the memory device in which the encoded data were stored. At least some of the second analog values differ from the respective first analog values. A distortion that is present in the second analog values is estimated. Error correction metrics are computed with respect to the second analog values responsively to the estimated distortion. The second analog values are processed using the error correction metrics in an ECC decoding process, so as to reconstruct the data.

    摘要翻译: 一种用于操作存储器件(24)的方法包括使用纠错码(ECC)对数据进行编码,并将编码数据作为第一模拟值存储在存储器件的相应模拟存储单元(32)中。 在存储编码数据之后,从其中存储有编码数据的存储器件的相应存储单元读取第二模拟值。 至少一些第二模拟值与各自的第一模拟值不同。 估计存在于第二模拟值中的失真。 响应于估计的失真,相对于第二模拟值计算误差校正度量。 使用ECC解码处理中的纠错度量来处理第二模拟值,以重构数据。

    Programming schemes for multi-level analog memory cells
    23.
    发明授权
    Programming schemes for multi-level analog memory cells 有权
    多级模拟存储单元的编程方案

    公开(公告)号:US08681549B2

    公开(公告)日:2014-03-25

    申请号:US13566372

    申请日:2012-08-03

    摘要: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    摘要翻译: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

    Data Storage In Analog Memory Cell Arrays Having Erase Failures
    25.
    发明申请
    Data Storage In Analog Memory Cell Arrays Having Erase Failures 有权
    数据存储在具有擦除故障的模拟存储器单元阵列中

    公开(公告)号:US20100199150A1

    公开(公告)日:2010-08-05

    申请号:US12677114

    申请日:2008-10-12

    摘要: A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

    摘要翻译: 一种用于数据存储的方法包括对一组模拟存储器单元(32)执行擦除操作。 组中的一个或多个存储器单元,其在擦除操作中失败,被识别为擦除故障单元。 用于对组中的模拟存储器单元进行编程的存储配置响应于所识别的擦除故障单元被修改。 使用修改的存储配置将数据存储在模拟存储器单元的组中。

    PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS
    27.
    发明申请
    PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS 有权
    多级模拟记忆细胞的编程方案

    公开(公告)号:US20090043951A1

    公开(公告)日:2009-02-12

    申请号:US12186867

    申请日:2008-08-06

    IPC分类号: G06F12/02

    摘要: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    摘要翻译: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

    Efficient readout from analog memory cells using data compression
    28.
    发明授权
    Efficient readout from analog memory cells using data compression 有权
    使用数据压缩从模拟存储单元高效读出

    公开(公告)号:US08230300B2

    公开(公告)日:2012-07-24

    申请号:US12397368

    申请日:2009-03-04

    IPC分类号: G11C27/00

    摘要: A method for data storage includes storing data in a group of analog memory cells by writing respective input storage values to the memory cells in the group. After storing the data, respective output storage values are read from the analog memory cells in the group. Respective confidence levels of the output storage values are estimated, and the confidence levels are compressed. The output storage values and the compressed confidence levels are transferred from the memory cells over an interface to a memory controller.

    摘要翻译: 一种用于数据存储的方法包括通过将相应的输入存储值写入组中的存储器单元来将数据存储在一组模拟存储器单元中。 在存储数据之后,从组中的模拟存储器单元读取相应的输出存储值。 估计输出存储值的相对置信水平,并且压缩置信水平。 输出存储值和压缩置信水平通过接口从存储器单元传送到存储器控制器。

    Data storage in analog memory cell arrays having erase failures
    29.
    发明授权
    Data storage in analog memory cell arrays having erase failures 有权
    具有擦除故障的模拟存储单元阵列中的数据存储

    公开(公告)号:US08527819B2

    公开(公告)日:2013-09-03

    申请号:US12677114

    申请日:2008-10-12

    IPC分类号: G11C29/00

    摘要: A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

    摘要翻译: 一种用于数据存储的方法包括对一组模拟存储器单元(32)执行擦除操作。 组中的一个或多个存储器单元,其在擦除操作中失败,被识别为擦除故障单元。 用于对组中的模拟存储器单元进行编程的存储配置响应于所识别的擦除故障单元被修改。 使用修改的存储配置将数据存储在模拟存储器单元的组中。

    Data storage with incremental redundancy
    30.
    发明授权
    Data storage with incremental redundancy 有权
    具有增量冗余的数据存储

    公开(公告)号:US08234545B2

    公开(公告)日:2012-07-31

    申请号:US12119069

    申请日:2008-05-12

    IPC分类号: G06F11/00

    CPC分类号: G06F11/1068 G11C2029/0411

    摘要: A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.

    摘要翻译: 一种用于操作存储器的方法包括用错误校正码(ECC)对输入数据进行编码以产生包括第一和第二部分的输入编码数据,使得基于第一冗余部分的第一部分可以解码ECC,并且基于两者 第一和第二部分具有高于第一冗余的第二冗余。 读取输出编码数据并评估条件。 输入数据使用从第一级别选择的解码级别来重构,在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC,以及第二级 级别,其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理,以在第二冗余处对ECC进行解码。