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    Magnetoresistive stack and method of fabricating same
    21.
    发明授权
    Magnetoresistive stack and method of fabricating same 有权

    公开(公告)号：US10199574B2

    公开(公告)日：2019-02-05

    申请号：US15941153

    申请日：2018-03-30

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC: H01L27/108 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    Magnetoresistive Stack and Method of Fabricating Same
    22.
    发明申请
    Magnetoresistive Stack and Method of Fabricating Same 审中-公开

    公开(公告)号：US20170125670A1

    公开(公告)日：2017-05-04

    申请号：US15400889

    申请日：2017-01-06

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    Magnetoresistive Memory Element and Method of Fabricating Same
    23.
    发明申请
    Magnetoresistive Memory Element and Method of Fabricating Same 审中-公开
    磁阻记忆元件及其制造方法

    公开(公告)号：US20160163964A1

    公开(公告)日：2016-06-09

    申请号：US15046483

    申请日：2016-02-18

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having perpendicular magnetic anisotropy, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. A first surface of the first dielectric is in contact with a first surface of the free magnetic layer. The magnetoresistive memory element further includes a second dielectric, having a first surface that is in contact with a second surface of the free magnetic layer, a conductor, including electrically conductive material, and an electrode, disposed between the second dielectric and the conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion including at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    Abstract translation: 磁阻存储元件（例如，自旋转矩磁阻存储元件）包括固定磁性层，具有垂直磁各向异性的自由磁性层和设置在固定磁性层和自由磁性层之间的第一电介质。 第一电介质的第一表面与自由磁性层的第一表面接触。 磁阻存储元件还包括第二电介质，其具有与自由磁性层的第二表面接触的第一表面，包括导电材料的导体以及设置在第二电介质和导体之间的电极。 电极包括：（i）具有与第二电介质的第二表面接触的表面的非铁磁部分，和（ii）第二部分，其包括设置在第二电介质的非铁磁部分之间的至少一个铁磁材料 电极和导体。

    Magnetoresistive Memory Element and Method of Fabricating Same
    24.
    发明申请
    Magnetoresistive Memory Element and Method of Fabricating Same 审中-公开
    磁阻记忆元件及其制造方法

    公开(公告)号：US20160013401A1

    公开(公告)日：2016-01-14

    申请号：US14860657

    申请日：2015-09-21

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive memory element (for example, a spin-torque magnetoresistive memory element), includes first and second dielectric layers, wherein at least one of the dielectric layers is a magnetic tunnel junction. The memory element also includes a free magnetic layer having a first surface in contact with the first dielectric layer and a second surface in contact with the second dielectric layer. The free magnetic layer, which is disposed between the first and second dielectric layers, includes (i) a first high-iron interface region located along the first surface of the free magnetic layer, wherein the first high-iron interface region has at least 50% iron by atomic composition, and (ii) a first layer of ferromagnetic material adjacent to the first high-iron interface region, the first high-iron interface region between the first layer of ferromagnetic material and the first surface of the free magnetic layer.

    Abstract translation: 磁阻存储元件（例如，自旋扭矩磁阻存储元件）包括第一和第二电介质层，其中至少一个电介质层是磁性隧道结。 存储元件还包括具有与第一介电层接触的第一表面和与第二介电层接触的第二表面的自由磁性层。 设置在第一和第二电介质层之间的自由磁性层包括（i）沿着自由磁性层的第一表面设置的第一高铁界面区域，其中第一高铁界面区域具有至少50 以及（ii）与第一高铁界面区域相邻的第一铁磁材料层，第一铁磁材料层与自由磁性层的第一表面之间的第一高铁界面区域。

    TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET
    25.
    发明申请
    TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET 有权
    具有减速补偿角度的双轴磁场传感器用于零偏移

    公开(公告)号：US20140159179A1

    公开(公告)日：2014-06-12

    申请号：US14168095

    申请日：2014-01-30

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Jijun Sun ,  Phillip Mather ,  Srinivas Pietambaram ,  Jon Slaughter ,  Renu Whig ,  Nicholas Rizzo

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/12 ,  Y10T29/49117

    Abstract: A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.

    Abstract translation: 提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并具有小的补偿角。 示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。 另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。

    Two-axis magnetic field sensor having reduced compensation angle for zero offset
    26.
    发明授权
    Two-axis magnetic field sensor having reduced compensation angle for zero offset 有权
    两轴磁场传感器具有减小零偏移的补偿角

    公开(公告)号：US08647891B2

    公开(公告)日：2014-02-11

    申请号：US13909622

    申请日：2013-06-04

    Applicant: Everspin Technologies, Inc.

    Inventor： Jijun Sun ,  Phillip Mather ,  Srinivas Pietambaram ,  Jon Slaughter ,  Renu Whig ,  Nicholas Rizzo

    IPC: H01L21/00

    CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/12 ,  Y10T29/49117

    Abstract: A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.

    Abstract translation: 提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并具有小的补偿角。 示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。 另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。

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