公开(公告)号：US11758823B2

公开(公告)日：2023-09-12

申请号：US16188934

申请日：2018-11-13

Applicant: Everspin Technologies, Inc.

Inventor： Jijun Sun ,  Jon Slaughter ,  Renu Whig

IPC: H01L43/02 ,  H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.

公开(公告)号：US10347828B2

公开(公告)日：2019-07-09

申请号：US16230031

申请日：2018-12-21

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

IPC: H01L27/108 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

公开(公告)号：US20180226574A1

公开(公告)日：2018-08-09

申请号：US15941153

申请日：2018-03-30

Applicant: Everspin Technologies, Inc.

Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

IPC: H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

公开(公告)号：US12167702B2

公开(公告)日：2024-12-10

申请号：US18123729

申请日：2023-03-20

Applicant: Everspin Technologies, Inc.

Inventor： Sumio Ikegawa ,  Han Kyu Lee ,  Sanjeev Aggarwal ,  Jijun Sun ,  Syed M. Alam ,  Thomas Andre

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

公开(公告)号：US11937436B2

公开(公告)日：2024-03-19

申请号：US17285122

申请日：2019-10-29

Applicant: Everspin Technologies, Inc.

Inventor： Jijun Sun ,  Han-Jong Chia ,  Sarin Deshpande ,  Ahmet Demiray

IPC: H10B61/00 ,  H10N30/50 ,  H10N35/80 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10B61/10 ,  H10B61/00 ,  H10B61/20 ,  H10N30/50 ,  H10N35/80 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region.

公开(公告)号：US11690229B2

公开(公告)日：2023-06-27

申请号：US17131926

申请日：2020-12-23

Applicant: Everspin Technologies, Inc.

Inventor： Jijun Sun ,  Sanjeev Aggarwal ,  Han-Jong Chia ,  Jon M. Slaughter ,  Renu Whig

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  G11B5/39 ,  H01L43/10

CPC classification number: H01L27/222 ,  G11B5/3909 ,  G11C11/1673 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

公开(公告)号：US11004899B2

公开(公告)日：2021-05-11

申请号：US16395396

申请日：2019-04-26

Applicant: Everspin Technologies, Inc.

Inventor： Sanjeev Aggarwal ,  Jijun Sun

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region. The intermediate region may be formed of a dielectric material and comprise at least two different metal oxides.

公开(公告)号：US20150357560A1

公开(公告)日：2015-12-10

申请号：US14298085

申请日：2014-06-06

Applicant: Everspin Technologies, Inc.

Inventor： Chaitanya Mudivarthi ,  Jason Allen Janesky ,  Jijun Sun ,  Frederick Bennett Mancoff ,  Sanjeev Aggarwal

IPC: H01L43/12

CPC classification number: H01J43/12 ,  H01L43/12

Abstract: The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.

Abstract translation: 通过在处理操作期间使磁性碎屑非磁性来改善磁阻器件的磁特性。 通过在存在磁场的情况下退火部分或完全形成的器件来实现进一步的改进，以消除或稳定该器件的磁阻堆叠内的磁微钉扎位置或其他磁异常。 这种磁特性的改善降低了诸如存在于MRAM中的磁阻器件阵列中的开关特性的偏差。

公开(公告)号：US12089418B2

公开(公告)日：2024-09-10

申请号：US18185725

申请日：2023-03-17

Applicant: Everspin Technologies, Inc.

Inventor： Jijun Sun ,  Sanjeev Aggarwal ,  Han-Jong Chia ,  Jon M. Slaughter ,  Renu Whig

IPC: H10B61/00 ,  G11B5/39 ,  G11C11/16 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10B61/00 ,  G11B5/3909 ,  G11C11/1673 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

公开(公告)号：US11637235B2

公开(公告)日：2023-04-25

申请号：US16744963

申请日：2020-01-16

Applicant: Everspin Technologies, Inc.

Inventor： Sumio Ikegawa ,  Han Kyu Lee ,  Sanjeev Aggarwal ,  Jijun Sun ,  Syed M. Alam ,  Thomas Andre

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  H01L27/22

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.