公开(公告)号：US20180026180A1

公开(公告)日：2018-01-25

申请号：US15722191

申请日：2017-10-02

Applicant: Everspin Technologies, Inc.

Inventor： Srinivas V. PIETAMBARAM ,  Bengt J. AKERMAN ,  Renu WHIG ,  Jason A. JANESKY ,  Nicholas D. RIZZO ,  Jon M. SLAUGHTER

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

公开(公告)号：US20160260894A1

公开(公告)日：2016-09-08

申请号：US15142721

申请日：2016-04-29

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Renu WHIG ,  Phillip MATHER ,  Kenneth SMITH ,  Sanjeev AGGARWAL ,  Jon SLAUGHTER ,  Nicholas RIZZO

IPC: H01L43/12 ,  G01R33/00 ,  H01L27/22 ,  G01R33/09 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

公开(公告)号：US20160104835A1

公开(公告)日：2016-04-14

申请号：US14954075

申请日：2015-11-30

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Renu WHIG ,  Phillip MATHER ,  Kenneth SMITH ,  Sanjeev AGGARWAL ,  Jon SLAUGHTER ,  Nicholas RIZZO

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  G01R33/09 ,  G01R33/00

CPC classification number: H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

Abstract translation: 半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。 该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。