Method and apparatus for measuring workpiece surface topography
    22.
    发明授权
    Method and apparatus for measuring workpiece surface topography 失效
    测量工件表面形貌的方法和装置

    公开(公告)号:US5270560A

    公开(公告)日:1993-12-14

    申请号:US876576

    申请日:1992-04-30

    Applicant: David Cheng

    Inventor: David Cheng

    CPC classification number: H01L21/67288 G01B11/16 G01B11/255 G01B11/306

    Abstract: A method for measuring surface topography characterized by making multiple scans of the surface with a laser scanning unit and utilizing the multiple scans to create representations of the surface's topography. The surface topography data can also be used to calculate the compressive or tensile stress caused by a thin film applied to the surface of a semiconductor wafer. The apparatus of the present invention scans a laser beam across a surface in an x direction, and detects displacements of a reflected portion of the laser beam in a z direction. A pair of photodetectors are used to translate z direction displacements of the reflected beam into analog signals which are digitized and input into a microcomputer for analysis. The multiple scans of the surface are preferably accomplished by placing the workpiece on a pedestal which can be rotated to various angular positions.

    Abstract translation: 一种用于测量表面形貌的方法,其特征在于用激光扫描单元对表面进行多次扫描,并利用多次扫描来创建表面的地形图。 表面形貌数据也可用于计算由施加到半导体晶片表面的薄膜引起的压缩或拉伸应力。 本发明的装置沿x方向扫描激光束的表面,并且检测激光束在z方向上的反射部分的位移。 一对光电探测器用于将反射光束的z方向位移转换为模拟信号,并将其数字化并输入微型计算机进行分析。 表面的多次扫描优选通过将工件放置在可旋转到各种角度位置的基座上来实现。

    System for measuring radii of curvatures
    23.
    发明授权
    System for measuring radii of curvatures 失效
    测量曲率半径的系统

    公开(公告)号:US5233201A

    公开(公告)日:1993-08-03

    申请号:US822910

    申请日:1992-01-21

    Applicant: David Cheng

    Inventor: David Cheng

    CPC classification number: H01L21/67288 G01B11/16 G01B11/255 G01B11/306

    Abstract: A system for measuring topological features, such curvatures and profiles, of surfaces such as semiconductor wafer surfaces. The system includes a) laser means and lens means for directing a beam of weakly-convergent light for incidence on a surface which is to be measured, b) photodetector means for detecting the position of the laser light beam reflected from the surface, c) first translation means for providing relative movement between the laser means and the surface in a direction which is normal to the direction of the incident beam, so that the incident beam is caused to scan across the surface, e) position sensing means connected to the photodetector means for detecting the location on the photodetector means at which the reflected beam is incident.

    Abstract translation: 用于测量诸如半导体晶片表面的表面的拓扑特征,诸如曲率和轮廓的系统。 该系统包括:a)激光装置和透镜装置,用于引导一束弱聚光用于入射到待测表面上; b)光检测器装置,用于检测从表面反射的激光束的位置,c) 第一平移装置,用于在垂直于入射光束方向的方向上提供激光装置和表面之间的相对运动,使得入射光束穿过该表面扫描; e)连接到光电检测器的位置检测装置 用于检测反射光束入射的光电检测器装置上的位置的装置。

    Magnetic field-enhanced plasma etch reactor
    25.
    发明授权
    Magnetic field-enhanced plasma etch reactor 失效
    磁场增强等离子体蚀刻反应器

    公开(公告)号:US5215619A

    公开(公告)日:1993-06-01

    申请号:US760848

    申请日:1991-09-17

    Abstract: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

    Abstract translation: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面(壁和气体歧管)和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动,以从协作的外部机器人刀片接收晶片,将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面,用于保持晶片表面冷却,尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极,而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案,高蚀刻速率,高通量单晶硅蚀刻器,其在高气体压力下提供均匀性,方向性和选择性,干净地操作并且并入现场自清洁能力。

    Film stress measurement system having first and second stage means
    27.
    发明授权
    Film stress measurement system having first and second stage means 失效
    薄膜应力测量系统具有第一和第二阶段装置

    公开(公告)号:US5118955A

    公开(公告)日:1992-06-02

    申请号:US357403

    申请日:1989-05-26

    Applicant: David Cheng

    Inventor: David Cheng

    CPC classification number: H01L21/67288 G01B11/16 G01B11/255 G01B11/306

    Abstract: A system for measuring the curvature of a surface includes a laser for emitting a beam of light to be incident upon the surface; a photodetector for detecting light reflected by the surface; a first stage for selectively moving the surface in a direction normal to the direction of the incident beam; a second stage for selectively moving the photodetector in a direction normal to the reflected beam; a sensor connected to the photodetector for detecting the displacement of the reflected beam relative to the photodetector.

    Abstract translation: 用于测量表面曲率的系统包括用于发射入射到表面上的光束的激光器; 用于检测由所述表面反射的光的光电检测器; 用于在垂直于入射光束的方向的方向选择性地移动表面的第一阶段; 第二级,用于沿垂直于反射光束的方向选择性地移动光电探测器; 连接到光电检测器的传感器,用于检测反射光束相对于光电检测器的位移。

    METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESSING
    28.
    发明申请
    METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESSING 审中-公开
    半导体加工方法与装置

    公开(公告)号:US20100221915A1

    公开(公告)日:2010-09-02

    申请号:US12776235

    申请日:2010-05-07

    Abstract: A method and apparatus for semiconductor processing is disclosed. In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first segment of a vacuum enclosure, the vacuum enclosure being attached to a processing chamber and a factory interface. The wafer is transported to a second segment of the vacuum enclosure using a vertical transport mechanism, wherein the second segment is above or below the first segment.

    Abstract translation: 公开了一种用于半导体处理的方法和装置。 在一个实施例中,一种在群集工具内传送晶片的方法包括将晶片放置在真空封壳的第一段中,真空外壳附接到处理室和工厂接口。 使用垂直传送机构将晶片传送到真空外壳的第二部分,其中第二部分在第一部分之上或之下。

    Techniques for clustering a set of objects
    29.
    发明授权
    Techniques for clustering a set of objects 有权
    聚集一组对象的技术

    公开(公告)号:US07752233B2

    公开(公告)日:2010-07-06

    申请号:US11731008

    申请日:2007-03-29

    CPC classification number: G06F17/3071 G06F17/30625 G06K9/6224

    Abstract: Described are techniques for clustering a data set of objects. Divide phase processing is performed to partition the data set into two or more partitions forming a hierarchy of the objects. Merge phase processing may be performing using the hierarchy to determine one or more disjoint clusters of objects of the data set. Optional preprocessing may be performed to determine weights for one or more features of an object.

    Abstract translation: 描述了用于聚类对象的数据集的技术。 执行分割相位处理以将数据集划分成形成对象的层次结构的两个或更多个分区。 可以使用层级来执行合并阶段处理以确定数据集的对象的一个​​或多个不相交的集群。 可以执行可选的预处理以确定对象的一个​​或多个特征的权重。

    Method and apparatus for semiconductor processing
    30.
    发明授权
    Method and apparatus for semiconductor processing 有权
    用于半导体处理的方法和装置

    公开(公告)号:US07748944B2

    公开(公告)日:2010-07-06

    申请号:US11929357

    申请日:2007-10-30

    Abstract: A method and apparatus for semiconductor processing is disclosed. In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first segment of a vacuum enclosure, the vacuum enclosure being attached to a processing chamber and a factory interface. The wafer is transported to a second segment of the vacuum enclosure using a vertical transport mechanism, wherein the second segment is above or below the first segment.

    Abstract translation: 公开了一种用于半导体处理的方法和装置。 在一个实施例中,一种在群集工具内传送晶片的方法包括将晶片放置在真空封壳的第一段中,真空外壳附接到处理室和工厂接口。 使用垂直传送机构将晶片传送到真空外壳的第二部分,其中第二部分在第一部分之上或之下。

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