公开(公告)号：US10804678B2

公开(公告)日：2020-10-13

申请号：US16132070

申请日：2018-09-14

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil ,  Marco Fiorentino

IPC: H01S5/343 ,  H01S5/32 ,  H01S5/347 ,  H01S3/23 ,  H01S3/063 ,  H01S5/34 ,  H01S5/02 ,  H01S5/042 ,  H01S5/026 ,  H01S5/10

Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

公开(公告)号：US20200271864A1

公开(公告)日：2020-08-27

申请号：US15929675

申请日：2020-05-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Raymond G. Beausoleil ,  Di Liang ,  Marco Fiorentino ,  Geza Kurczveil ,  Mir Ashkan Seyedi ,  Zhihong Huang

IPC: G02B6/293 ,  H04J14/02 ,  H04Q11/00 ,  H04B10/50

Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.

公开(公告)号：US10658177B2

公开(公告)日：2020-05-19

申请号：US15756577

申请日：2015-09-03

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang

IPC: H01L21/02 ,  H01L21/764 ,  H01L29/06

Abstract: In example implementations of a heterogeneous substrate, the heterogeneous substrate includes a first material having an air trench, a second material coupled to the first material, a dielectric mask on a first portion of the second material and an active region that is grown on a remaining portion of the second material. An air gap may be formed in the air trench by the second material coupled to the first material. Defects in the second material may be contained to an area below the dielectric mask and the active region may remain defect free.

公开(公告)号：US10656337B2

公开(公告)日：2020-05-19

申请号：US15718306

申请日：2017-09-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Raymond G. Beausoleil ,  Di Liang ,  Marco Fiorentino ,  Geza Kurczveil ,  Mir Ashkan Seyedi ,  Zhihong Huang

IPC: G02B6/293 ,  H04J14/02 ,  H04Q11/00 ,  H04B10/50 ,  G02B6/12

Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.

公开(公告)号：US10566765B2

公开(公告)日：2020-02-18

申请号：US15335909

申请日：2016-10-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/34 ,  H01S5/065 ,  H01S5/06 ,  H01S5/22 ,  H01S5/02 ,  H01S5/068 ,  H01S5/50

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

公开(公告)号：US10530488B2

公开(公告)日：2020-01-07

申请号：US16231159

申请日：2018-12-21

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Cheng Li ,  Di Liang ,  Kehan Zhu

IPC: H04L27/01 ,  H04B10/564 ,  H04B10/54 ,  H04B10/80 ,  H04L25/02 ,  H04L25/03 ,  H04B10/50 ,  H04B10/58

Abstract: Examples disclosed herein relate to optical driver circuits. In some of the disclosed examples, an optical driver circuit includes a pre-driver circuit and a main driver circuit. The pre-driver circuit may include a pattern generator and at least one serializer to generate a main modulation signal and an inverted delayed modulation signal. The main driver circuit may include a level controller to control amplitudes of pre-emphasis on rising and falling edges of a modulation signal output and an equalization controller to transition the modulation signal output from the pre-emphasis amplitudes to main modulation amplitudes using the inverted delayed modulation signal.

公开(公告)号：US10459133B1

公开(公告)日：2019-10-29

申请号：US15963570

申请日：2018-04-26

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B5/18 ,  G02B6/124 ,  G02B6/13 ,  G02B6/122 ,  G02B6/12 ,  G02B27/42

Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

公开(公告)号：US20190103719A1

公开(公告)日：2019-04-04

申请号：US15720493

申请日：2017-09-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Raymond G. Beausoleil ,  Di Liang ,  Chong Zhang ,  David Kielpinski

IPC: H01S3/00 ,  H01S5/06 ,  H01S3/10 ,  H01S5/10 ,  H01S5/12

CPC classification number: H01S3/0057 ,  G02B6/10 ,  H01S3/083 ,  H01S3/10007 ,  H01S3/1118 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/021 ,  H01S5/0265 ,  H01S5/0601 ,  H01S5/0657 ,  H01S5/1092 ,  H01S5/1221 ,  H01S5/141

Abstract: A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.

公开(公告)号：US20190081139A1

公开(公告)日：2019-03-14

申请号：US16082268

申请日：2016-03-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/764 ,  H01L21/768 ,  H01L21/20 ,  H01L21/033

Abstract: Examples herein relate to devices having substrates with selective airgap regions for mitigating defects resulting from heteroepitaxial growth of device materials. An example device may include a first semiconductor layer disposed on a substrate. The first semiconductor layer may have a window cut through a face, where etching a selective airgap region on the substrate is enabled via the window. A second semiconductor layer may be heteroepitaxially grown on the face of the first semiconductor layer so that at least a portion of the second semiconductor layer is aligned over the selective air gap region.

公开(公告)号：US10090632B2

公开(公告)日：2018-10-02

申请号：US15110429

申请日：2014-02-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang

IPC: H01S3/083 ,  H01S5/10 ,  H01S5/12 ,  G02B6/293 ,  H01S5/14 ,  H01S3/063 ,  H01S3/102

Abstract: An example device in accordance with an aspect of the present disclosure includes a ring waveguide and bus waveguide. The ring waveguide has a first coupled portion associated with a first modal index, and the bus waveguide includes a second coupled portion associated with a second modal index. The second coupled portion is evanescently coupleable to the first coupled portion. A laser outcoupling and associated lasing output of the device is variable based on varying a difference between the first modal index and the second modal index to vary coupling between the first coupled portion and the second coupled portion, without varying modal indices of non-coupled portions of the ring waveguide and bus waveguide.