公开(公告)号：US20050129860A1

公开(公告)日：2005-06-16

申请号：US10480347

申请日：2003-04-02

申请人： Noriyasu Echigo ,  Hiroshi Satani ,  Hideki Okumura ,  Hisaaki Tachihara

发明人： Noriyasu Echigo ,  Hiroshi Satani ,  Hideki Okumura ,  Hisaaki Tachihara

IPC分类号： B05D7/24 ,  C23C14/12 ,  C23C14/24 ,  H01G4/14 ,  H01L51/52 ,  B05D3/02 ,  B05C5/00 ,  B05D1/02 ,  B67B7/00

CPC分类号： H01G4/145 ,  B05D1/60 ,  C23C14/12 ,  C23C14/246 ,  H01L51/5256

摘要： A liquid resin material stored in a resin material cup is sent to a supply tank under pressure through a primary side supply pipe by increasing the pressure in a pressure tank. The supply tank is provided with a piston that is displaced in accordance with the amount of the resin material in the supply tank, and the resin material is quantified by the stroke of the piston. The quantified resin material is sent to a heating member through an evaporation side supply pipe, is evaporated by heating, and condenses on a substrate. The resin material is quantified by filling the supply tank with the resin material temporarily, and only the filling resin material is sent to the heating member. Therefore, an evaporation amount becomes constant, and as a result, the thickness of a resin thin film is stabilized.

摘要翻译： 通过增加压力罐中的压力，将储存在树脂材料杯中的液态树脂材料通过初级侧供给管在压力下送入供给箱。 供应罐设有根据供应罐中的树脂材料量移动的活塞，并且树脂材料由活塞的行程量化。 定量树脂材料通过蒸发侧供应管送到加热件，通过加热蒸发，并在基材上冷凝。 树脂材料通过临时填充供给槽与树脂材料进行定量，仅将填充树脂材料送至加热部件。 因此，蒸发量变得恒定，结果树脂薄膜的厚度稳定。

公开(公告)号：US06578949B2

公开(公告)日：2003-06-17

申请号：US09950716

申请日：2001-09-13

申请人： Masaru Takahashi ,  Hitoshi Hayakawa ,  Kojiro IIzuka ,  Mitsugu Ota ,  Takashi Akase ,  Hideki Okumura

发明人： Masaru Takahashi ,  Hitoshi Hayakawa ,  Kojiro IIzuka ,  Mitsugu Ota ,  Takashi Akase ,  Hideki Okumura

IPC分类号： B41J2165

CPC分类号： B41J2/16547 ,  B41J2/16526 ,  B41J2/16532

摘要： A cap member (10) which is brought into contact with a nozzle forming surface of a recording head (15) to seal up the nozzle forming surface, and a wiping member (11) which may be brought into sliding contact with the nozzle forming surface of the recording head (15) are disposed on a cap holder (31). With progress of a cleaning operation in which ink is placed under a negative pressure, and sucked and discharged from the recording head, a cap retaining member (50) is moved upward and placed to a set state, whereby blocking the slanting and downward movement of the cap member (10). Then, the wiping member (11) located on the cap holder (31) slides on the nozzle forming surface to wipe the nozzle forming surface. To a flushing operation, the cap retaining member (50) is moved downward and placed to a reset state. In this state, the wiping member (11) does not slide on the nozzle forming surface.

公开(公告)号：US06265744B1

公开(公告)日：2001-07-24

申请号：US09304342

申请日：1999-05-04

申请人： Hideki Okumura

发明人： Hideki Okumura

IPC分类号： H01L2976

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7811

摘要： An electronic field reduction in a corner of a trench section of a semiconductor is achieved by forming a p-type base region in a source area of an n-type drain region, and both an n-type source region and a gate leading region are formed in a surface area of the p-type base region separately from each other. A trench section is formed in both the source region and gate leading region to reach the drain region. Polysilicon is formed in the trench section and on the surface of a semiconductor substrate with a gate insulation film interposed therebetween and then thermally treated. An interlayer insulation film is deposited on the entire surface of the semiconductor substrate, and then contact holes reaching the gate leading region and the source and base regions in the peripheral portion of the trench section in the source region are formed. A source/base electrode which contacts both the source and base regions through one of the contact holes is formed. A gate electrode is formed which contacts both the gate leading region and the polysilicon in the trench through the other contact hole.

摘要翻译： 通过在n型漏极区域的源区域中形成p型基极区域，并且n型源极区域和栅极引出区域都是在半导体的沟槽部分的拐角处的电场减小 形成在p型基底区域的表面区域中。 在源极区域和栅极引出区域中形成沟槽部分以到达漏极区域。 在沟槽部分和半导体衬底的表面上形成多晶硅，并在其间插入栅极绝缘膜，然后进行热处理。 在半导体衬底的整个表面上沉积层间绝缘膜，然后形成到达栅极引导区域的接触孔，并且形成源极区域中的沟槽部分的周边部分中的源极和基极区域。 形成通过一个接触孔接触源极和基极区域的源/底电极。 形成栅极电极，其通过另一个接触孔与沟槽中的栅极引出区域和多晶硅接触。

公开(公告)号：US5811179A

公开(公告)日：1998-09-22

申请号：US554281

申请日：1995-11-06

申请人： Kazunori Sakamoto ,  Hideo Hatanaka ,  Yasuhiro Ueyama ,  Kiyoshi Kobata ,  Kazunori Kubota ,  Hideki Okumura

发明人： Kazunori Sakamoto ,  Hideo Hatanaka ,  Yasuhiro Ueyama ,  Kiyoshi Kobata ,  Kazunori Kubota ,  Hideki Okumura

IPC分类号： G11B5/708

CPC分类号： G11B5/708 ,  Y10S428/90 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/257 ,  Y10T428/26

摘要： A magnetic recording medium including a non-magnetic polymeric support and a magnetic layer on the non-magnetic polymeric support. The magnetic layer is positioned to be in contact with a record/playback head and includes ferromagnetic powder, abrasive material and binder resin, with at least 40 parts by weight of the abrasive material per 100 parts by weight of the ferromagnetic powder. The ferromagnetic powder has a saturation magnetization .sigma.s of 80 emu/g or more and long axis length of 0.25 .mu.m or less.

摘要翻译： 包括非磁性聚合物载体和在非磁性聚合物载体上的磁性层的磁记录介质。 磁性层定位成与记录/回放头接触，并且包括铁磁粉末，研磨材料和粘合剂树脂，每100重量份铁磁粉末至少40重量份的研磨材料。 铁磁粉末的饱和磁化σs为80emu / g以上，长轴长度为0.25μm以下。

公开(公告)号：US08025357B2

公开(公告)日：2011-09-27

申请号：US12234013

申请日：2008-09-19

申请人： Shigenori Fukasawa ,  Satoru Hosono ,  Hideki Okumura ,  Seiji Tojo

发明人： Shigenori Fukasawa ,  Satoru Hosono ,  Hideki Okumura ,  Seiji Tojo

IPC分类号： B41J2/165

CPC分类号： B41J2/16523 ,  B41J2/16535

摘要： A method for maintaining a fluid ejecting apparatus including an ejecting head that has an ejecting surface in which a plurality of ejecting ports that eject fluid are formed, and a maintenance portion that performs maintenance processing to recover the ejection of fluid from the ejecting ports and that has a cap member and a wiping member. The method includes performing capping processing to put the cap member on the ejecting surface and to suck, and then wiping processing to wipe the ejecting surface with the wiping member, and performing the capping processing again and then waiting a predetermined time without performing the wiping processing.

摘要翻译： 一种用于维持流体喷射装置的方法，该喷射装置包括具有排出表面的喷射头，喷射表面形成有喷射流体的多个喷射口;以及维护部，其进行维护处理以恢复从喷射口排出的流体，并且 具有帽部件和擦拭部件。 该方法包括执行封盖处理以将盖构件放置在喷射表面上并进行抽吸，然后擦拭处理以用擦拭构件擦拭喷射表面，并且再次执行封盖处理，然后等待预定时间，而不进行擦拭处理 。

公开(公告)号：US07700998B2

公开(公告)日：2010-04-20

申请号：US12164389

申请日：2008-06-30

申请人： Hideki Okumura ,  Takayoshi Nogami ,  Hiroto Misawa

发明人： Hideki Okumura ,  Takayoshi Nogami ,  Hiroto Misawa

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

摘要： A type semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a plurality of gate electrodes which are formed in gate trenches via gate insulating films, the gate trenches being formed through the second semiconductor layer and the third semiconductor layer; a plurality of impurity regions of the second conductivity type which are formed at regions below bottoms of contact trenches, the contact trenches being formed at the third semiconductor layer in a thickness direction thereof between corresponding ones of the gate trenches and longitudinal cross sections of the contact trenches being shaped in ellipse, respectively; first electrodes which are formed so as to embed the contact trenches and contacted with the impurity regions, respectively; and a second electrode formed on a rear surface of the semiconductor substrate.

摘要翻译： 一种半导体器件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层; 第一导电类型的第三半导体层; 通过栅极绝缘膜形成在栅极沟槽中的多个栅电极，栅极沟槽通过第二半导体层和第三半导体层形成; 多个第二导电类型的杂质区域形成在接触沟底部下方的区域处，所述接触沟槽在第三半导体层的厚度方向上形成在相应的栅极沟槽和触点的纵向截面之间 沟槽分别成椭圆形; 第一电极被形成为分别嵌入接触沟槽并与杂质区域接触; 以及形成在所述半导体衬底的后表面上的第二电极。

公开(公告)号：US07423315B2

公开(公告)日：2008-09-09

申请号：US11265208

申请日：2005-11-03

申请人： Hideki Okumura ,  Hitoshi Kobayashi ,  Masanobu Tsuchitani ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa ,  Satoshi Taji ,  Kenichi Tokano

发明人： Hideki Okumura ,  Hitoshi Kobayashi ,  Masanobu Tsuchitani ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa ,  Satoshi Taji ,  Kenichi Tokano

IPC分类号： H01L29/36

CPC分类号： H01L29/66712 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/7811

摘要： The present application provides a semiconductor device including a first-conductivity type semiconductor substrate, a pillar structure portion formed on the first-conductivity type semiconductor substrate and formed of five semiconductor pillar layers arranged in one direction parallel to a main surface of the first-conductivity type semiconductor substrate, and isolation insulating portions formed on the first-conductivity type semiconductor substrate and sandwiching the pillar structure portion between the isolation insulating portions, wherein the pillar structure portion is formed of a first first-conductivity type pillar layer, a second first-conductivity type pillar layer and a third first-conductivity type pillar layer which sandwich the first first-conductivity type pillar layer, a first second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the second first-conductivity type pillar layer, and a second second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the third first-conductivity type pillar layer.

摘要翻译： 本申请提供了一种半导体器件，其包括第一导电型半导体衬底，形成在第一导电型半导体衬底上的柱结构部分，并且由平行于第一导电型主要表面的一个方向排列的五个半导体柱层 以及形成在第一导电型半导体基板上并将柱结构部分夹在隔离绝缘部分之间的隔离绝缘部分，其中柱结构部分由第一第一导电型柱层，第二第一导电型支柱层， 导电型柱层和夹着第一第一导电型柱层的第三第一导电型柱层，设置在第一第一导电型柱层和第二第一导电型柱之间的第一第二导电型柱层 层和第二第二导电类型 柱层，设置在第一第一导电型柱层和第三第一导电型柱层之间。

公开(公告)号：US20060043480A1

公开(公告)日：2006-03-02

申请号：US10991433

申请日：2004-11-19

申请人： Masanobu Tsuchitani ,  Tetsuo Matsuda ,  Hideki Okumura ,  Atsuko Yamashita

发明人： Masanobu Tsuchitani ,  Tetsuo Matsuda ,  Hideki Okumura ,  Atsuko Yamashita

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor device comprises a semiconductor layer which includes a terminate end part and a cell formation part that is surrounded by this end part, and a plurality of guard rings each of which is formed at the end part to surround the cell formation part. These guard rings are made shallower and smaller in width as they get near to the guard ring that resides at the outside position.

摘要翻译： 半导体器件包括半导体层，其包括终端部分和由该端部部分包围的电池形成部分，以及多个保护环，每个保护环形成在端部处以围绕电池形成部分。 这些保护环的宽度越来越小，因为它们靠近位于外部位置的防护环。

公开(公告)号：US6060747A

公开(公告)日：2000-05-09

申请号：US159122

申请日：1998-09-23

申请人： Hideki Okumura ,  Akihiko Osawa ,  Yoshiro Baba ,  Noboru Matsuda ,  Masanobu Tsuchitani

发明人： Hideki Okumura ,  Akihiko Osawa ,  Yoshiro Baba ,  Noboru Matsuda ,  Masanobu Tsuchitani

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/739

CPC分类号： H01L29/0696

摘要： A semiconductor device is characterized in that source electrode contact regions, each of which is formed of a first conductivity type source layer and a second conductivity type base layer in a surface of a semiconductor surface, are formed at respective intersectional points of a diagonally-arranged lattice, and in that a trench having a gate electrode buried therein is formed so as to snake through the contact regions alternately. By virtue of the structure, the trench arrangement and source/base simultaneous contact quality are improved, to thereby increase a trench density (channel density) per unit area.

摘要翻译： 半导体器件的特征在于，在对角线布置的各个交点处形成源极电极接触区域，每个源极电极接触区域由半导体表面的第一导电型源极层和第二导电型基极层形成， 并且具有埋入其中的具有栅电极的沟槽形成为交替地穿过接触区域。 通过该结构，提高了沟槽布置和源极/基极同时接触质量，从而增加了每单位面积的沟槽密度（沟道密度）。

公开(公告)号：US08890237B2

公开(公告)日：2014-11-18

申请号：US13419396

申请日：2012-03-13

申请人： Takahiro Kawano ,  Hideki Okumura

发明人： Takahiro Kawano ,  Hideki Okumura

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L23/48

CPC分类号： H01L23/48 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device according to one embodiment includes a first electrode, a semiconductor substrate provided on the first electrode, and an insulating member. A terminal trench is made in the upper surface of the semiconductor substrate in a region including a boundary between a cell region and a terminal region. The semiconductor substrate includes a first portion of a first conductivity type and connected to the first electrode, a second portion of the first conductivity type, a third portion of a second conductivity type provided on the second portion in the cell region and connected to the second electrode, and a fourth portion of the first conductivity type selectively provided on the third portion and connected to the second electrode. The insulating member is disposed between the third portion and the second portion in a direction from the cell region toward the terminal region.

摘要翻译： 根据一个实施例的功率半导体器件包括第一电极，设置在第一电极上的半导体衬底和绝缘构件。 在包括单元区域和端子区域之间的边界的区域中，在半导体衬底的上表面中形成端子沟槽。 半导体衬底包括第一导电类型的第一部分并连接到第一电极，第一导电类型的第二部分，第二导电类型的第三部分，设置在电池区域的第二部分上，并连接到第二导电类型的第二部分 电极，以及选择性地设置在第三部分上并连接到第二电极的第一导电类型的第四部分。 绝缘构件在从单元区域朝向端子区域的方向上配置在第三部分和第二部分之间。