Reflective LCD having polarized light separator and phase plate on a light-incident-side
    22.
    发明授权
    Reflective LCD having polarized light separator and phase plate on a light-incident-side 有权
    具有偏振光分离器的反射LCD和在光入射侧的相位板

    公开(公告)号:US06262782B1

    公开(公告)日:2001-07-17

    申请号:US09489044

    申请日:2000-01-21

    IPC分类号: G02F11335

    CPC分类号: G02F1/13362 G02F1/133536

    摘要: A reflective LCD includes first and second substrates facing each other, a liquid crystal layer disposed between the upper and lower substrates, a high transmissive polarizer attached on an outer surface of the first substrate, and an optical system disposed on the high transmissive polarizer. The high transmissive polarizer allows a part of incident light to pass and reflecting the rest of the incident light. The optical system returns the reflected light to the high transmissive polarizer after changing an advancing direction of the reflected light to a polarizing direction such that the reflected light can be transmitted through the high transmissive polarizer.

    摘要翻译: 反射型液晶显示器包括彼此面对的第一和第二基板,设置在上基板和下基板之间的液晶层,附着在第一基板的外表面上的高透射偏振器和设置在高透射偏振器上的光学系统。 高透射偏振器允许入射光的一部分通过并反射入射光的其余部分。 在将反射光的前进方向改变为偏振方向之后,光学系统将反射光返回到高透射偏振器,使得反射光可以透射穿过高透射偏振器。

    Method for driving simple matrix-type liquid crystal display
    23.
    发明授权
    Method for driving simple matrix-type liquid crystal display 失效
    驱动简单矩阵型液晶显示器的方法

    公开(公告)号:US5850203A

    公开(公告)日:1998-12-15

    申请号:US710059

    申请日:1996-09-10

    IPC分类号: G02F1/133 G09G3/36

    摘要: A simple matrix-type liquid crystal display is driven by a frame signal for indicating the starting point of each frame on a screen, a latch clock signal for latching an input data signal in a unit of a horizontal line of the liquid crystal display, and a modulation signal for controlling polarity of a voltage applied to each cell of the liquid crystal display. The phase difference between the modulation signal and the frame signal is controlled to lower and minimize flicker intensity. The reliability of the liquid crystal cell is preserved and flicker is prevented so that the picture quality is improved and life of the simple matrix-type liquid crystal display is extended.

    摘要翻译: 简单的矩阵型液晶显示器由用于指示屏幕上每帧的起始点的帧信号驱动,用于锁存液晶显示器的水平线中的输入数据信号的锁存时钟信号,以及 用于控制施加到液晶显示器的每个单元的电压的极性的调制信号。 控制调制信号与帧信号之间的相位差,降低闪烁强度。 保持液晶单元的可靠性,防止闪烁,提高图像质量,延长简单矩阵型液晶显示器的使用寿命。

    Reflective, thin film transistor addressed, matrix liquid crystal display
    26.
    发明授权
    Reflective, thin film transistor addressed, matrix liquid crystal display 失效
    反光薄膜晶体管寻址,矩阵液晶显示

    公开(公告)号:US4643530A

    公开(公告)日:1987-02-17

    申请号:US497883

    申请日:1983-05-25

    申请人: Tsuneo Yamazaki

    发明人: Tsuneo Yamazaki

    摘要: A matrix liquid crystal display device comprising a reflecting plate and a polarizing plate coated on an insulating substrate, a thin film transistor arranged on the insulating substrate in matrix configuration, and a liquid crystal sandwiched between the insulating substrate and a glass plate. A cross-talk between picture elements caused by transmission or reflection of light on the substrate is prevented. The thin film transistor is formed by a semiconductor film made of amorphous silicon or a gate insulating film made of silicon dioxide which is easily formed at low temperature under 40.degree. C. by plasma CVD method or the like.

    摘要翻译: 一种矩阵液晶显示装置,包括涂覆在绝缘基板上的反射板和偏光板,以矩阵形式布置在绝缘基板上的薄膜晶体管和夹在绝缘基板和玻璃板之间的液晶。 防止由于基板上的光的透射或反射引起的图像元素之间的串扰。 薄膜晶体管由非晶硅制成的半导体膜或由二氧化硅制成的栅极绝缘膜形成,其通过等离子体CVD法等容易地在40℃的低温下形成。

    Thin film transistor
    28.
    发明授权
    Thin film transistor 失效
    薄膜晶体管

    公开(公告)号:US4609930A

    公开(公告)日:1986-09-02

    申请号:US607418

    申请日:1984-05-07

    申请人: Tsuneo Yamazaki

    发明人: Tsuneo Yamazaki

    CPC分类号: H01L29/78633

    摘要: A thin film transistor of amorphous silicon is supported by an insulated gate on an insulating substrate and has the opposite side covered with a shading layer of amorphous silicon containing germanium in an amount more than 30% atomic density.

    摘要翻译: 非晶硅的薄膜晶体管由绝缘基板上的绝缘栅极支撑,并且相对侧覆盖有超过30%原子密度的含锗锗的阴影层。

    Silicon photodiode with n-type control layer
    29.
    发明授权
    Silicon photodiode with n-type control layer 失效
    具有n型控制层的硅光电二极管

    公开(公告)号:US4499483A

    公开(公告)日:1985-02-12

    申请号:US603983

    申请日:1984-04-26

    摘要: A p-.nu.-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance.The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a .nu.-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.

    摘要翻译: 具有从与p型区域延伸的部分相邻的表面的一部分延伸到硅体的n型控制层的p-nu-n硅光电二极管。 结合该控制层的光电二极管具有高得多的结电阻。 本发明还包括制造具有减少数量的处理步骤的光电二极管的改进方法。 改进之处在于,在钝化表面并从表​​面延伸到体内的p型区域之前,将As或Sb注入n型Si体的表面以形成n型层。