摘要:
The drain voltage of an IGFET having a channel responsive to the change in physical quantity to be measured is negatively fed back to the gate terminal of the IGFET. The negative feedback loop includes series connection of a first amplifier having an amplification factor larger than unity and a second amplifier having an amplification factor smaller than unity. The interconnection point between the first and the second amplifiers is connected to the output terminal. There is provided a stable, highly sensitive and highly reliable semiconductor sensor.
摘要:
A pressure transducer comprises a pressure sensor including a bridge connection of gauging resistors formed on a semiconductor substrate, and a power supply connected to the pressure sensor for driving it and basically acting as a constant current source. The power supply includes at least two transistors formed on the semiconductor substrate. One of the transistors provides a collector current which is less in temperature-dependency relative to that of the other transistor, and the other transistor has a collector circuit connected to the pressure sensor and provides a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current. A ratio of the temperature-dependent current to the temperature-independent current is adjusted by selecting operation characteristics of the two transistors such that a temperature characteristic of the collector current of the other transistor is substantially inversely proportional to a temperature characteristic of the output of the pressure sensor when it is driven with a constant voltage.
摘要:
Disclosed is a magnetic rotary encoder used in combination with a rotary body having plural pieces of magnetic information recorded on at least one circumferentially running track. The rotary encoder comprises a substrate having a surface disposed opposite to the rotary body and at least one magnetoresistive element formed on the surface of the substrate. The magnetoresistive element is formed on the substrate surface as an integral pattern including at least two portions extending substantially in the radial direction of the rotary body in a relation opposite to the magnetic information recorded portion of the rotary body, two lead connection terminal portions formed at the outer ends of the radially extending portions respectively, and a circumferentially extending portion interconnecting the radially extending portions at their ends, so as to form a single electrical signal path which passes both of the radially extending portions and terminates in the two lead connection terminal portions. These lead connection terminal portions are disposed outside of the outer peripheral edge of the rotary body.
摘要:
A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures.A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and 14a, and 13b and 14b), each of which pairs are constructed on each pressure sensitive diaphragm, electrodes (15a and 16a, and 15b and 16b) which are provided for electrical connections of these strain gauges on the semiconductor single crystal, and an insulating substrate of borosilicate glass, the thermal expansion coefficient is substantially equal tol that of said semiconductor single-crystal chip, wherein the semiconductor single-crystal chip (1) and the glass substrate (2) are bonded to each other by an Anodic Bonding method, thereby being able to obtain a semiconductor pressure sensor which scarcely producing errors outputs.
摘要:
A capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process which makes possible a very accurate dimensioning of the hollow formed by the deflecting portion of the diaphragm. A substrate of borosilicate glass has a flat surface which is placed against the side of the diaphragm in contact with the supporting portion and the two elements are joined by a process of anodic bonding so that a pressure chamber is formed between the substrate and the thin deflecting portion of the diaphragm. Within the pressure chamber, a thin electrode is provided on the surface of the substrate thereby forming electrostatic capacity between the substrate and the diaphragm and a hole is provided through the substrate for supplying of fluid into the pressure chamber.
摘要:
In an inductive-write, magnetoresistive-read type magnetic head having a magnetoresistive read head and an inductive write head superimposed on each other, the magnetic center of the read head is made more coincident with the physical center of the write head by a changing of a magnetization direction of a magnetoresistive element. The recording/reproducing apparatus using this magnetic head can thus have a good S/N ratio even if the track width is narrow.
摘要:
A flying head slider has gas bearing rails formed on a surface thereof disposed in opposed relation to a recording medium. The flying head slider flies at a microscopic distance above the recording medium by a pressure produced by a stream of gas resulted from the rotation of the recording medium. Each of the gas bearing rails comprises an inflow portion disposed at an inflow side of the gas stream so as to produce a pressure, an outflow portion disposed at an outflow side of the gas stream so as to produce a pressure, and a connective portion interconnecting the inflow portion and the outflow portion in a common plane. The connective portion serves to suppress an excessive compression of the gas, and achieves good damping characteristics.
摘要:
A semiconductor pressure detector apparatus has a strain--electric signal conversion bridge which is composed of four semiconductor strain gauges, and an amplifier which serves to hold at a predetermined value the sum of currents flowing through the bridge. The midpoints of two arms constituting the bridge are respectively connected to the noninverting inputs of two negative feedback amplifiers. Outputs from the two negative feedback amplifiers are applied to a differential amplifier, and an output proportional to the difference of the outputs of the former amplifiers appears at an output terminal of the latter amplifier. A potential equal to potentials which appear at the midpoints of the two arms of the bridge when the bridge is in its balanced state at a predetermined temperature and under a predetermined pressure is generated by two resistances which are connected in series with a supply voltage, and the potential is applied through a switch to either of the inverting inputs of the two negative feedback amplifiers, whereby the zero-point temperature compensation of this apparatus is made.
摘要:
A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.
摘要:
A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.