公开(公告)号：US20070228378A1

公开(公告)日：2007-10-04

申请号：US11612829

申请日：2006-12-19

申请人： Franck FOURNEL ,  Hubert Moriceau ,  Chrystel Deguet

发明人： Franck FOURNEL ,  Hubert Moriceau ,  Chrystel Deguet

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L21/2007 ,  B81C1/00031 ,  H01L21/76254

摘要： Method for producing nanostructures comprising: a step of providing a substrate (100) having a buried barrier layer (2) and above said barrier layer (2) a crystalline film (5) provided with a network of crystalline defects and/or stress fields (12) in a crystalline zone (13), one or several steps of attacking the substrate (100), of which a preferential attack either of the crystalline defects and/or the stress fields, or the crystalline zone (13) between the crystalline defects and/or the stress fields, said attack steps enabling the barrier layer (2) to be laid bared locally and protrusions (7) to be formed on a nanometric scale, separated from each other by hollows (7.1) having a base located in the barrier layer, the protrusions leading to nanostructures (7, 8).

摘要翻译： 一种生产纳米结构的方法，包括：提供具有掩埋阻挡层（2）和所述阻挡层（2）上方的衬底（100）的步骤，所述结晶膜（5）具有晶体缺陷和/或应力场网络 12）在结晶区域（13）中，攻击衬底（100）的一个或几个步骤，其中晶体缺陷和/或应力场的优先攻击或晶体缺陷之间的结晶区域（13） 和/或应力场，所述攻击步骤使得阻挡层（2）能够局部放置并且以纳米尺度形成突起（7），所述突起（7）通过具有位于 阻挡层，导致纳米结构的突起（7,8）。

公开(公告)号：US07258743B2

公开(公告)日：2007-08-21

申请号：US10362278

申请日：2002-06-20

申请人： Franck Fournel ,  Bernard Aspar ,  Hubert Moriceau

发明人： Franck Fournel ,  Bernard Aspar ,  Hubert Moriceau

IPC分类号： C30B33/00

CPC分类号： C30B33/06 ,  C30B33/00 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S117/902 ,  Y10T428/24421 ,  Y10T428/31645 ,  H01L2924/00

摘要： This invention relates to a process for controlling the orientation of secondary structures (A1, A2) with at least a crystalline part during the transfer of secondary structures from a primary structure (A) on which the secondary structures have an initial crystalline orientation identical to the orientation of the primary structure, onto at least one support structure (B), the process comprising: a) the formation of at least one orientation mark (Va, Va1, Va2) when the secondary structures are fixed to the primary structure (A), the mark having an arbitrary orientation with respect to the said initial crystalline orientation, but identical for each secondary structure, and b) when a set of secondary structures is transferred onto at least one support structure (B), an arrangement of the secondary structures so that their orientation marks can be oriented in a controlled manner.

摘要翻译： 本发明涉及一种用于控制二次结构（A 1，A 2）在二次结构从第一结构（A）转移过程中至少具有结晶部分的方向的方法，其中二级结构具有初始结晶取向相同 至少一个支撑结构（B）的方向，所述方法包括：a）当所述二级结构固定到所述主要结构时，形成至少一个取向标记（Va，Va 1，Va 2） 结构（A），所述标记相对于所述初始结晶取向具有任意取向，但对于每个二级结构是相同的，以及b）当一组二级结构转移到至少一个支撑结构（B）上时， 的二次结构，使得它们的取向标记可以以受控的方式取向。

公开(公告)号：US20070072391A1

公开(公告)日：2007-03-29

申请号：US10584052

申请日：2004-12-21

申请人： Stephane Pocas ,  Hubert Moriceau ,  Jean-Francois Michaud

发明人： Stephane Pocas ,  Hubert Moriceau ,  Jean-Francois Michaud

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  H01L21/26506 ,  H01L21/266

摘要： The invention relates to a sealing process for two wafers (2, 12) made of semiconducting materials, comprising: a step for implantation of metallic species (4) in at least the first wafer, a step for assembly of the first and second wafer, an annealing step.

摘要翻译： 本发明涉及用于由半导体材料制成的两个晶片（2,12）的密封工艺，包括：在至少第一晶片中注入金属物质（4）的步骤，用于组装第一和第二晶片的步骤， 退火步骤。

公开(公告)号：US20060205179A1

公开(公告)日：2006-09-14

申请号：US10538482

申请日：2003-12-08

申请人： Franck Fournel ,  Hubert Moriceau ,  Christelle Lagahe

发明人： Franck Fournel ,  Hubert Moriceau ,  Christelle Lagahe

IPC分类号： H01L21/30 ,  H01L21/00 ,  H01L21/46

CPC分类号： H01L21/67092 ,  H01L21/304 ,  H01L21/76254

摘要： The invention concerns a method of making a complex microelectronic structure by assembling two substrates through two respective linking surfaces, the structure being designed to be dissociated at a separation zone. The invention is characterized in that is consists, prior to assembly, in producing a state difference in the tangential stresses between the two surfaces to be assembled, said difference being selected so as to obtain in the assembled structure a predetermined stress state at the time of dissociation.

摘要翻译： 本发明涉及一种通过两个相应的连接表面组装两个基板来制造复杂的微电子结构的方法，该结构设计成在分离区解离。 本发明的特征在于，在组装之前，在制造要组装的两个表面之间的切向应力的状态差时，选择所述差异，以便在组装结构中获得预定的应力状态 解离

公开(公告)号：US20060141742A1

公开(公告)日：2006-06-29

申请号：US10537679

申请日：2004-05-27

申请人： Franck Fournel ,  Hubert Moriceau ,  Philippe Montmayeul

发明人： Franck Fournel ,  Hubert Moriceau ,  Philippe Montmayeul

IPC分类号： H01L21/46

CPC分类号： H01L21/6835 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/76251 ,  H01L24/75 ,  H01L2221/68363 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/3511 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/159 ,  H01L2924/00

摘要： The invention relates to a method of producing a complex microelectronic structure, in which two basic microelectronic structures (1, 3) are assembled at the two respective connecting faces (3) thereof. The invention is characterised in that, before assembly, a difference is created in the tangential stress state between the two faces to be assembled, said difference being selected such as to produce a pre-determined stress state within the assembled structure under given conditions in relation to the assembly conditions.

摘要翻译： 本发明涉及一种复合微电子结构的制造方法，其中两个基本微电子结构（1,3）组装在其两个相应连接面（3）处。 本发明的特征在于，在组装之前，在要组装的两个面之间的切向应力状态产生差异，所述差异被选择为在给定的条件下在组装结构内产生预定的应力状态 到装配条件。

公开(公告)号：US06809044B1

公开(公告)日：2004-10-26

申请号：US10018757

申请日：2002-03-20

申请人： Bernard Aspar ,  Michel Bruel ,  Hubert Moriceau

发明人： Bernard Aspar ,  Michel Bruel ,  Hubert Moriceau

IPC分类号： H01L21425

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  Y10S438/977

摘要： The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities, partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).

摘要翻译： 本发明涉及从具有平面（2）的固体材料的基材（1）开始制造薄膜的方法，该方法包括：将气态化合物注入基材（1）中以形成一个微孔 （4）在与所述薄膜的厚度对应的所述平面（2）的深度处，气态化合物在可能削弱微腔层的基底的条件下被注入，部分或全部分离 从基板（1）的其余部分的薄膜，该分离包括添加热能并将压力施加到所述平面（2）的步骤。

公开(公告)号：US06808967B1

公开(公告)日：2004-10-26

申请号：US09806511

申请日：2001-04-16

申请人： Bernard Aspar ,  Michel Bruel ,  Hubert Moriceau

发明人： Bernard Aspar ,  Michel Bruel ,  Hubert Moriceau

IPC分类号： H01L2100

CPC分类号： H01L21/26533 ,  H01L21/76245

摘要： The aim of the invention is a method for producing a layer (2) of a first material embedded in a substrate (1) comprising at least one second material. The method comprises the following stages: formation in the substrate (1), at the level of the desired embedded layer, of a layer of microcavities intended to serve as centers of nucleation to produce said first material in said second material, formation of precipitate embryos from the nucleation centers formed, the precipitate embryos corresponding to the first material, growth of the precipitates from the embryos through species concentration corresponding to the first material and carried to the microcavity layer.

摘要翻译： 本发明的目的是一种用于生产包含至少一种第二材料的衬底（1）中的第一材料的层（2）的方法。 该方法包括以下步骤：在所需嵌入层的基底（1）的水平上形成旨在用作成核中心以在所述第二材料中产生所述第一材料的微腔层，形成沉淀胚胎 从成核中心形成，沉淀胚胎对应于第一种材料，从胚胎生长沉淀物质浓度对应于第一种物质并运送到微腔层。

公开(公告)号：US06204079B1

公开(公告)日：2001-03-20

申请号：US09352783

申请日：1999-07-14

申请人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac

IPC分类号： H01L2100

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2224/83 ,  H01L2924/00

摘要： A process for the selective transfer of elements from a transfer support to a reception support, the elements bonding through a first face to the transfer support according to a defined bonding energy, the elements each having a second face configured to contact with the reception support. Elements to be transferred are transferred by applying a bonding energy between them and the reception support that exceeds the bonding energy between their first face and the transfer support. Elements not to be transferred onto the transfer support are retained.

摘要翻译： 一种用于将元件从转移支撑件选择性地传送到接收支撑件的过程，所述元件根据限定的结合能将第一面粘接到转印支撑件，每个元件具有被配置为与接收支撑件接触的第二面。 通过在它们之间施加超过其第一面和转印支撑体之间的结合能的接收支撑体之间的结合能量来转移待转移的元件。 不转移到转印支架上的元素被保留。

公开(公告)号：US08877539B2

公开(公告)日：2014-11-04

申请号：US13522829

申请日：2011-01-26

申请人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

发明人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

IPC分类号： H01L31/18 ,  H01L31/20 ,  H01L21/306 ,  H01L31/0236 ,  H01L31/075

CPC分类号： H01L21/30604 ,  H01L31/02363 ,  H01L31/075 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

摘要翻译： 至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。 各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。 通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。 这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

公开(公告)号：US20130196484A1

公开(公告)日：2013-08-01

申请号：US13819993

申请日：2011-08-24

申请人： Hubert Moriceau ,  Maxime Argoud ,  Christophe Morales ,  Marc Zussy

发明人： Hubert Moriceau ,  Maxime Argoud ,  Christophe Morales ,  Marc Zussy

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/68 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76224

摘要： A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.

摘要翻译： 一种用于获得由聚合物载体上的第一材料制成的膜的方法，所述方法包括将第一晶片接合到第二晶片，由此限定所述第一晶片和所述第二晶片之间的结合界面，所述第一和第二晶片中的至少一个 第二晶片包括位于所述接合界面附近的所述第一材料层，在所述第一晶片中，挖空出空腔，所述空腔包括平行于所述结合界面的底部，所述底部在所述第一晶片中在 在所述空腔中形成从其底部控制的厚度的聚合物层以获得组合的晶片部分，所述组合的晶片部分包括由所述底部上的所述聚合物层形成的底部区域和 周边区域，并且在其厚度的主要部分上消除所述第二晶片，从而在所述聚合物层下方释放包含所述第一材料层的膜 ial