摘要:
A semiconductor device, such as a PMOS or NMOS device, having localized stressors is provided. Recesses are formed on opposing sides of a gate electrode. A stress-inducing region is formed along a bottom of the recess, and a stressed layer is formed over the stress-inducing region. By having a stress-inducing region with a larger lattice structure than the stressed layer, a tensile strain may be created in a channel region of the semiconductor device and may be suitable for an NMOS device. By having a stress-inducing region with a smaller lattice structure than the stressed layer, a compressive strain may be created in the channel region of the semiconductor device and may be suitable for a PMOS device. Embodiments may be applied to various types of substrates and semiconductor devices, such as planar transistors and finFETs.
摘要:
An integrated circuit structure includes a substrate and a germanium-containing semiconductor fin over the substrate. The germanium-containing semiconductor fin has an upper portion having a first width, and a neck region under the upper portion and having a second width smaller than the first width.
摘要:
A balance training device includes at least one supporting base and at least one plank member. The supporting base includes a plank connecting portion formed with a plank coupling groove that opens upwardly. The plank coupling groove includes a first groove section and a second groove section that intersects the first groove section. The plank member includes a plate portion and a rib structure disposed on a bottom face of the plate portion. The rib structure removably engages the plank coupling groove of the supporting base. The rib structure includes a first rib part to engage the first groove section and a second rib part to engage the second groove section.
摘要:
An apparatus and a method for determining the type of an optical disk are provided. Firstly, an RF signal of the optical disk in an optical disk drive is read out. Next, a bandpass signal is extracted from the RF signal by a bandpass filter whose central frequency is a wobble frequency. Then, whether the bandpass signal corresponds to a wobble signal is determined. If so, the optical disk is a recordable optical disk; otherwise, the optical disk is a read-only optical disk.
摘要:
A feedback object detection method and system. The system includes an object segmentation element, an object tracking element and an object prediction element. The object segmentation element extracts the object from an image according to prediction information of the object provided by the object prediction element. Then, the object tracking element tracks the extracted object to generate motion information of the object like moving speed and moving direction. The object prediction element generates the prediction information such as predicted position and predicted size of the object according to the motion information. The feedback of the prediction information to the object segmentation element facilitates accurately extracting foreground pixels from the image.
摘要:
The present invention provides a nanomicell for a skin, and the nanomicell includes an oil substance, an extract of a Angelica Radix, an extract of a Lithospermum Radix, and a phospholipid layer. The extract of a Angelica Radix is formed by extracting the Angelica Radix with the oil substance, and the extract of a Lithospermum Radix is formed by extracting the Lithospermum Radix with the oil substance. The extract of the Angelica Radix and the extract of the Lithospermum Radix are packaged within the phospholipid layer to form a plurality of micells having a diameter of nano-level.
摘要:
A composite distributed dielectric structure includes one or more conductor layers, one or more dielectric layers distributed on the conductor layers, and one or more conductor traces distributed on the dielectric layers. One or more dielectric plates can be further formed around the conductor traces. The dielectric layers or plates may or may not have plural dielectric materials therein. Each conductor trace lies on a dielectric material without crossing two different dielectric materials. Two or more dielectric layers may be stacked on the conductor layers.
摘要:
A portable projector with heat dissipating system is disclosed. The portable projector has a housing, at least a light source and a heat dissipating system, which comprises a heat dissipating tunnel, a light source heat dissipating module, and a fan. The heat dissipating tunnel has an inlet and an outlet such that air is able to enter the portable projector through the inlet and exit from it through the outlet. The light source heat dissipating module has at least one heat sink coupled to each light source for dissipating heat generated by each light source, and a heat pipe coupled to each heat sink for collecting heat dissipated by each heat sink to the heat dissipating tunnel, and the fan is located at the outlet of the heat dissipating tunnel for dissipating heat collected by the heat dissipating tunnel to the outside of the housing of the portable projector.
摘要:
A method of increasing data extraction compatibility for an optical disc drive is disclosed. The method first provides extraction parameter sets, wherein the extraction parameter sets comprise a first extraction parameter set and a second extraction parameter set. The optical disc drive then uses the first extraction parameter set to extract data from an optical disc. Finally, the optical disc drive uses the second extraction parameter set to extract data from the optical disc if a data extraction error occurs.
摘要:
A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a dielectric layer. A metal-flash layer is formed overlying the polysilicon layer, and then a tungsten nitride layer is formed overlying the titanium layer. The tungsten nitride layer is annealed using nitrogen and hydrogen gases. A tungsten layer and a cap layer are successively formed overlying the tungsten nitride layer.