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    Integrated avalanche germanium photodetector
    21.
    发明申请
    Integrated avalanche germanium photodetector 有权
    集成雪崩锗光电探测器

    公开(公告)号：US20160204298A1

    公开(公告)日：2016-07-14

    申请号：US14757617

    申请日：2015-12-23

    Applicant: IMEC VZW ,  Universiteit Gent

    Inventor： Hongtao Chen ,  Joris Van Campenhout ,  Gunther Roelkens

    IPC: H01L31/107 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/105

    CPC classification number: H01L31/107 ,  G02B6/42 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/1808 ,  Y02E10/50

    Abstract: An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a Ge body adapted to conduct an optical mode. The Ge body comprises a first p-doped region that extends from a first main surface to a second main surface of the Ge body. The Ge body further comprises a first n-doped region that extends from the first main surface towards the second main surface of the Ge body. An intrinsic region occupies the undoped part of the Ge body. A first avalanche junction is formed by the first n-doped region that is located aside the p-doped region. The Ge body further comprises an incidence surface, suitable for receiving an optical mode, and a second n-doped Ge region that covers the Ge body and forms a second avalanche junction with the first p-doped region at the first main surface.

    Abstract translation: 一种综合雪崩光电探测器及其制造方法。 集成雪崩光电检测器包括适于进行光学模式的Ge体。 Ge体包括从Ge体的第一主表面延伸到第二主表面的第一p掺杂区域。 Ge体还包括从Ge体的第一主表面朝向第二主表面延伸的第一n掺杂区域。 内在区域占据Ge体的未掺杂部分。 第一个雪崩结由位于p掺杂区域的第一n掺杂区域形成。 Ge体还包括适于接收光学模式的入射表面和覆盖Ge体并与第一主表面处的第一p掺杂区域形成第二雪崩结的第二n掺杂Ge区域。

    Monolithic III-V-on-silicon opto-electronic phase modulator with a ridge waveguide
    22.
    发明授权
    Monolithic III-V-on-silicon opto-electronic phase modulator with a ridge waveguide 有权

    公开(公告)号：US11556043B2

    公开(公告)日：2023-01-17

    申请号：US17348049

    申请日：2021-06-15

    Applicant: IMEC VZW

    Inventor： Younghyun Kim ,  Didit Yudistira ,  Bernardette Kunert ,  Joris Van Campenhout ,  Maria Ioanna Pantouvaki

    IPC: G02F1/225 ,  G02F1/21 ,  H01L29/66 ,  H01L29/94

    Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.

    MONOLITHIC III-V-ON-SILICON OPTO-ELECTRONIC PHASE MODULATOR WITH A RIDGE WAVEGUIDE
    23.
    发明申请
    MONOLITHIC III-V-ON-SILICON OPTO-ELECTRONIC PHASE MODULATOR WITH A RIDGE WAVEGUIDE 有权

    公开(公告)号：US20220011641A1

    公开(公告)日：2022-01-13

    申请号：US17348049

    申请日：2021-06-15

    Applicant: IMEC VZW

    Inventor： Younghyun Kim ,  Didit Yudistira ,  Bernardette Kunert ,  Joris Van Campenhout ,  Maria Ioanna Pantouvaki

    IPC: G02F1/225 ,  G02F1/21 ,  H01L29/94 ,  H01L29/66

    Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.

    Radiation coupler
    25.
    发明授权
    Radiation coupler 有权
    辐射耦合器

    公开(公告)号：US09482816B2

    公开(公告)日：2016-11-01

    申请号：US14560909

    申请日：2014-12-04

    Applicant: IMEC VZW

    Inventor： Joris Van Campenhout ,  Philippe Absil ,  Peter Verheyen

    IPC: G02B6/12 ,  G02B6/124 ,  G02B6/42 ,  G02B6/34

    CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

    Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

    Abstract translation: 描述了用于将辐射耦合到半导体波导的半导体光子器件。 一种示例性光子器件包括绝缘体上半导体衬底，其包括半导体衬底，位于半导体衬底顶部的掩埋氧化物层，以及辐射将与之耦合的掩埋氧化物层顶部的半导体波导。 示例性器件还包括位于掩埋氧化物层顶部并被配置用于将入射辐射耦合到半导体波导的光栅耦合器。 半导体衬底在半导体衬底的背面具有凹陷部分，用于接收经由半导体衬底和光栅耦合器的背面与半导体波导耦合的入射辐射。

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