Memory chip with per row activation count having error correction code protection

    公开(公告)号:US12164373B2

    公开(公告)日:2024-12-10

    申请号:US17339754

    申请日:2021-06-04

    Abstract: A memory chip is described. The memory chip includes storage cells along a row of the memory chip's storage cell array to store a count value of the row's activations and error correction code (ECC) information to protect the count value. The memory chip includes ECC read logic circuitry to correct an error in the count value. The memory chip includes a comparator to compare the count value against a threshold. The memory chip includes circuitry to increment the count value if the count value is deemed not to have reached the threshold and ECC write logic circuitry to determine new ECC information for the incremented count value, and write driver circuitry to write the incremented count value and the new ECC information into the storage cells. The memory chip includes circuitry to cause the row to be refreshed if the count value is deemed to have reached the threshold.

    Refresh command control for host assist of row hammer mitigation

    公开(公告)号:US11990172B2

    公开(公告)日:2024-05-21

    申请号:US18213231

    申请日:2023-06-22

    Abstract: A memory device with internal row hammer mitigation couples to a memory controller. The memory controller or host can assist with row hammer mitigation by sending additional refresh cycles or refresh commands. In response to an extra refresh command the memory device can perform refresh for row hammer mitigation instead of refresh for standard data integrity. The memory controller can keep track of the number of activate commands sent to the memory device, and in response to a threshold number of activate commands, the memory controller sends the additional refresh command. With the extra refresh command the memory device can refresh the potential victim rows of a potential aggressor row, instead of simply refreshing a row that has not been accessed for a period of time.

    Enumerated per device addressability for memory subsystems

    公开(公告)号:US10997096B2

    公开(公告)日:2021-05-04

    申请号:US15987854

    申请日:2018-05-23

    Abstract: A memory subsystem enables per device addressability (PDA) to target configuration commands to one of multiple memory devices that share a select line or buffer devices that share an enable line. The system includes a host and multiple memory devices that can be coupled over a command bus and a data bus. The devices include a configuration or mode register to store a value to indicate whether PDA enumeration is enabled. When enabled, the host can provide an enumeration identifier (ID) command via the command bus with a signal via the data bus to assign an enumeration ID. After assignment of the enumeration ID, the host can send PDA commands via the command bus with the enumeration ID, without a signal on the data bus. Devices only process PDA commands that match their assigned enumeration ID, enabling the setting of device-specific configuration settings without needing to use the data bus on every PDA command.

    Read delivery for memory subsystem with narrow bandwidth repeater channel

    公开(公告)号:US10339072B2

    公开(公告)日:2019-07-02

    申请号:US15089455

    申请日:2016-04-01

    Abstract: A system with memory includes a repeater architecture where the memory connects to a host with one bandwidth, and a repeater extends a channel with a lower bandwidth. A memory circuit includes a first group of memory devices coupled point-to-point to a host device via a first group of read signal lines. The memory circuit includes a second group of memory devices coupled point-to-point to the first group of memory devices second group of read signal lines to extend the memory channel to the second group of memory devices. The second group of read signal lines has fewer read signal lines than the first group. The memory circuit includes a repeater to share read bandwidth between the first and second groups of memory devices, with up to a portion of the bandwidth for reads to the second group of memory devices, and at least an amount equal to the bandwidth less the portion for reads to the first group of memory devices. The repeater or buffer may accumulate data read from the second group of memory devices or a second memory module and burst the accumulated data to the host device with the first bandwidth.

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