公开(公告)号：US20140170803A1

公开(公告)日：2014-06-19

申请号：US13716009

申请日：2012-12-14

Applicant: INTERMOLECULAR, INC.

Inventor： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract translation: 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US20140162397A1

公开(公告)日：2014-06-12

申请号：US13706671

申请日：2012-12-06

Applicant: INTERMOLECULAR, INC.

Inventor： Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells includes the deposition of a chalcogenide material using a reactive sputtering technique. The reactive sputtering process utilizes metal or metal alloy target sputtered in the presence of a reactive chalcogen source. The chalcogenide material is then heated before being annealed using a directed energy source such as a laser or flash lamp. The chalcogenide material is then passivated after the anneal step to address chalcogen vacancies in the material that may have formed during the anneal step.

Abstract translation: 制造高效率CIGS太阳能电池的方法包括使用反应溅射技术沉积硫族化物材料。 反应性溅射工艺利用在反应性硫属原料存在下溅射的金属或金属合金靶。 然后在使用诸如激光或闪光灯的定向能量源进行退火之前加热硫族化物材料。 然后在退火步骤之后使硫族化物材料钝化，以解决在退火步骤期间可能形成的材料中的硫属元素空位。

公开(公告)号：US20140110813A1

公开(公告)日：2014-04-24

申请号：US14145028

申请日：2013-12-31

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jeroen Van Duren

IPC: H01L31/032

CPC classification number: H01L31/0323 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  Y02E10/541

Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer.

Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Ag增加吸收层前表面带隙的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了利用Na，Mg，K或Ca中的至少一种来增加吸收层前表面的带隙的方法。

公开(公告)号：US20130309805A1

公开(公告)日：2013-11-21

申请号：US13737127

申请日：2013-01-09

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

公开(公告)号：US20130309804A1

公开(公告)日：2013-11-21

申请号：US13711860

申请日：2012-12-12

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract translation: 一种制造高效CIGS太阳能电池的方法，包括从约25原子％至约66原子％之间的Ga浓度的溅射靶中沉积Ga浓度（Ga /（Ga + In）= 0.25-0.66）。 此外，该方法包括与导致高效率的高温退火工艺相结合的高温硒化工艺。

公开(公告)号：US20130143355A1

公开(公告)日：2013-06-06

申请号：US13737846

申请日：2013-01-09

Applicant: INTERMOLECULAR, INC.

Inventor： Jeroen Van Duren ,  Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/02366 ,  Y02E10/50

Abstract: Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline films that result in a roughened surface after a wet etch step, etc.

Abstract translation: 使用薄吸收层增加TFPV太阳能电池板的功率输出的方法包括用于粗糙化和/或纹理化背面接触层的技术。 这些技术包括在后接触沉积之前使基底粗糙化，将颗粒嵌入形成在基底上的溶胶 - 凝胶膜中，以及形成在湿蚀刻步骤之后导致粗糙化表面的多组分多晶膜等。

公开(公告)号：US09177876B2

公开(公告)日：2015-11-03

申请号：US14105797

申请日：2013-12-13

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jessica Eid ,  Minh Huu Le ,  Jeroen Van Duren

IPC: H01L21/66 ,  H01L31/032 ,  H01L31/0749

CPC classification number: H01L22/12 ,  H01L31/0322 ,  H01L31/0749 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  H01L2924/00

Abstract: Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.

Abstract translation: 公开了光吸收剂和方法。 所述方法包括在衬底上沉积包含Cu，Ga和In中的一种或多种的多个前体层，并在硫属化气氛中加热层。 多个前体层可以是包括至少两个层的一组或多组层，其中每组层中的每个层包括一个或多个Cu，Ga和In，其表现出单相。 这些层可以使用选自Ag和In的两个或三个靶，其中Cu和Ga的重量比小于45重量％的Cu（In，Ga）含有小于21重量％的Cu和Ga，其中Cu和 Cu（In，Ga）靶的Cu与（In + Ga）的原子比大于2，Ga与（Ga + In）的原子比大于0.5，元素In，元素Cu，In2Se3和In2S3。

公开(公告)号：US09034690B2

公开(公告)日：2015-05-19

申请号：US14133421

申请日：2013-12-18

Applicant: Intermolecular, Inc.

Inventor： Jeroen Van Duren ,  Sang Lee ,  Zhi-Wen Sun

IPC: H01L21/16 ,  H01L21/306 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/465 ,  H01L21/70

CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: Embodiments described herein provide methods for forming indium-gallium-zinc oxide (IGZO) devices. A substrate is provided. An IGZO layer is formed above the substrate. A copper-containing layer is formed above the IGZO layer. A wet etch process is performed on the copper-containing layer to form a source region and a drain region above the IGZO layer. The performing of the wet etch process on the copper-containing layer includes exposing the copper-containing layer to an etching solution including a peroxide compound and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof.

Abstract translation: 本文所述的实施方案提供了形成铟镓锌氧化物（IGZO）器件的方法。 提供基板。 在基板上形成IGZO层。 在IGZO层上形成含铜层。 在含铜层上进行湿式蚀刻处理，以在IGZO层上形成源极区域和漏极区域。 在含铜层上执行湿法蚀刻工艺包括将含铜层暴露于包括过氧化物化合物和柠檬酸，甲酸，丙二酸，乳酸，依替膦酸，膦酸或其中的一种的蚀刻溶液 其组合。

公开(公告)号：US09013021B2

公开(公告)日：2015-04-21

申请号：US14034226

申请日：2013-09-23

Applicant: Intermolecular, Inc.

Inventor： Jeroen Van Duren ,  Haifan Liang

IPC: H01L31/102 ,  H01L31/00 ,  H01L31/18 ,  H01L31/065

CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/1832 ,  Y02E10/541 ,  Y02P70/521

Abstract: Optical absorbers, solar cells comprising the absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a semiconductor layer having a bandgap of between about 1.0 eV and about 1.6 eV disposed on a substrate, wherein the semiconductor comprises two or more earth abundant elements. The bandgap of the optical absorber is graded through the thickness of the layer by partial substitution of at least one grading element from the same group in the periodic table as the at least one of the two or more earth abundant elements.

Abstract translation: 公开了光吸收剂，包含吸收体的太阳能电池和制造吸收体的方法。 光吸收器包括具有位于衬底上的约1.0eV至约1.6eV之间的带隙的半导体层，其中该半导体包括两个或更多个大量丰富的元素。 光吸收体的带隙通过至少一个分级元素从周期表中与两个或更多个地球丰富元素中的至少一个元素相同的基团部分地取代层的厚度。

公开(公告)号：US09012261B2

公开(公告)日：2015-04-21

申请号：US14094379

申请日：2013-12-02

Applicant: Intermolecular, Inc.

Inventor： Jeroen Van Duren ,  Sang Lee ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/306 ,  H01L21/02 ,  H01L21/465 ,  H01L21/70 ,  H01L27/12

CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate electrode deposition, gate electrode patterning, gate dielectric deposition, gate dielectric patterning, metal-based semiconductor material (e.g. IGZO) deposition, metal-based semiconductor material (e.g. IGZO) patterning, etch stop deposition, etch stop patterning, source/drain deposition, source/drain patterning, passivation deposition, or passivation patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅电极沉积，栅极电极图案化，栅极介电沉积，栅极电介质图案化，金属基半导体材料（例如IGZO）沉积，金属基半导体材料（例如IGZO）图案化，蚀刻停止 沉积，蚀刻停止构图，源极/漏极沉积，源极/漏极图案化，钝化沉积或钝化图案化。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。