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    Phase change switch with multi face heater configuration
    21.
    发明授权
    Phase change switch with multi face heater configuration 有权

    公开(公告)号：US12156488B2

    公开(公告)日：2024-11-26

    申请号：US18086211

    申请日：2022-12-21

    Applicant: Infineon Technologies AG

    Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

    IPC: H10N70/00 ,  H10N70/20

    Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

    RF switch circuit including a series connection of a plurality of transistors, RF switch including an RF switch circuit and method for switching RF signals
    25.
    发明授权
    RF switch circuit including a series connection of a plurality of transistors, RF switch including an RF switch circuit and method for switching RF signals 有权
    包括多个晶体管的串联连接的RF开关电路，包括RF开关电路的RF开关和用于切换RF信号的方法

    公开(公告)号：US08847667B2

    公开(公告)日：2014-09-30

    申请号：US14082919

    申请日：2013-11-18

    Applicant: Infineon Technologies AG

    Inventor： Hans Taddiken ,  Thomas Boettner

    IPC: H03K17/687

    CPC classification number: H03K17/693 ,  H03K2217/0054

    Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

    Abstract translation: 用于切换RF信号的RF开关电路包括第一端子和第二端子以及RF开关电路的第一端子与RF开关电路的第二端子之间的多个晶体管的串联连接。 此外，RF开关电路包括控制电路，其被配置为在RF开关电路的高阻抗状态下将RF开关电路的第一端子以一系列串联连接的方式导电耦合到第一晶体管的控制端子 多个晶体管。 RF开关电路的第二端子电导耦合到多个晶体管的串联连接中的最后一个晶体管的控制端子。

    3D-IC FOR RF APPLICATIONS
    26.
    发明申请
    3D-IC FOR RF APPLICATIONS 有权

    公开(公告)号：US20250157988A1

    公开(公告)日：2025-05-15

    申请号：US18509751

    申请日：2023-11-15

    Applicant: Infineon Technologies AG

    Inventor： Hans Taddiken ,  Christoph Kadow ,  Anton Steltenpohl

    IPC: H01L25/065 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L25/00

    Abstract: A three-dimensional integrated circuit includes a first integrated circuit having a first transistor and a first buried oxide layer; a second integrated circuit having a second transistor and a second buried oxide layer; a bond interface between an upper surface of the first integrated circuit and an upper surface of the second integrated circuit; a passivation layer coupled to the first buried oxide layer; and a mold wafer coupled to the second buried oxide layer.

    Phase Change Switch with Multi Face Heater Configuration
    29.
    发明申请
    Phase Change Switch with Multi Face Heater Configuration 有权

    公开(公告)号：US20230119033A1

    公开(公告)日：2023-04-20

    申请号：US18086211

    申请日：2022-12-21

    Applicant: Infineon Technologies AG

    Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

    IPC: H10N70/00 ,  H10N70/20

    Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

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