公开(公告)号：US20180375202A1

公开(公告)日：2018-12-27

申请号：US15906126

申请日：2018-02-27

Applicant: InnoLux Corporation

Inventor： I-Yin LI ,  Yi-Hung LIN ,  Chia-Chi HO ,  Li-Wei SUNG ,  Ming-Yen WENG ,  Hung-I TSENG ,  Kuo-Chun LO ,  Charlene SU ,  Ker-Yih KAO

IPC: H01Q1/40 ,  H01Q1/38 ,  H01Q3/44

CPC classification number: H01Q1/40 ,  G02F1/1313 ,  H01Q1/2266 ,  H01Q1/2275 ,  H01Q1/2283 ,  H01Q1/24 ,  H01Q1/241 ,  H01Q1/38 ,  H01Q1/50 ,  H01Q3/44 ,  H01Q9/0407 ,  H01Q9/0457 ,  H01Q13/10

Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.

公开(公告)号：US20180206334A1

公开(公告)日：2018-07-19

申请号：US15853517

申请日：2017-12-22

Applicant: InnoLux Corporation

Inventor： I-Yin LI ,  Chia-Chi HO ,  Yi-Hung LIN ,  Chen-Shuo HSIEH ,  Ker-Yih KAO

IPC: H05K1/02 ,  H05K3/00 ,  H01Q1/38

CPC classification number: H05K1/0243 ,  H01P3/082 ,  H01P11/003 ,  H01Q1/38 ,  H05K1/0271 ,  H05K3/0058

Abstract: A metal-laminated structure is provided. The metal-laminated structure includes a substrate, a compressive stress layer disposed on the substrate, and at least one metal layer disposed on the compressive stress layer, wherein the thickness ratio of the metal layer to the compressive stress layer is in a range from 1 to 30. A high-frequency device including the metal-laminated structure is also provided.

公开(公告)号：US20180206329A1

公开(公告)日：2018-07-19

申请号：US15858004

申请日：2017-12-29

Applicant: Innolux Corporation

Inventor： Yan-Syun WANG ,  Chi-Che TSAI ,  Wei-Yen WU ,  I-Yin LI

IPC: H05K1/02 ,  H05K3/10 ,  H05K3/22

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

公开(公告)号：US20180204785A1

公开(公告)日：2018-07-19

申请号：US15844907

申请日：2017-12-18

Applicant: InnoLux Corporation

Inventor： Ming-Yen WENG ,  Ker-Yih KAO ,  Chia-Chi HO ,  Tsutomu SHINOZAKI ,  Cheng-Chi WANG ,  I-Yin LI

IPC: H01L23/485 ,  H01L21/311 ,  H01L21/48 ,  H01L25/065 ,  H01L23/66

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.