公开(公告)号：US20150255716A1

公开(公告)日：2015-09-10

申请号：US14721640

申请日：2015-05-26

Applicant: Intermolecular Inc.

Inventor： Prashant B Phatak ,  Tony P. Chiang ,  Pragati Kumar ,  Michael Miller

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/8615 ,  H01L45/08 ,  H01L45/10 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165 ,  H01L45/1658 ,  H01L47/00

Abstract: Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.

公开(公告)号：US09029233B1

公开(公告)日：2015-05-12

申请号：US14612897

申请日：2015-02-03

Applicant: Intermolecular, Inc.

Inventor： Ronald John Kuse ,  Tony Chiang ,  Michael Miller ,  Prashant Phatak ,  Jinhong Tong

IPC: H01L21/16 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，在第一电极和第二电极之间的开关层，开关层包括第一金属氧化物，第一带隙较大 所述开关层具有第一厚度，以及所述开关层和所述第二电极之间的耦合层，所述耦合层包括第二金属氧化物，所述第二金属氧化物具有大于所述第一带隙的第二带隙，所述耦合层具有 第二厚度小于第一厚度的25％。

公开(公告)号：US08865484B2

公开(公告)日：2014-10-21

申请号：US13727237

申请日：2012-12-26

Applicant: Intermolecular, Inc.

Inventor： Monica Mathur ,  Michael Miller ,  Prashant B. Phatak

IPC: H01L21/66

CPC classification number: H01L28/40 ,  C23C14/228 ,  C23C16/45525 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/517

Abstract: Methods of forming layers can comprise defining a plurality of discrete site-isolated regions (SIRs) on a substrate, forming a first layer on one of the discrete SIRs, forming a second layer on the first layer, measuring a lattice parameter or an electrical property of the second layer, The process parameters for the formation of the first layer are varied in a combinatorial manner between different discrete SIRs to explore the possible layers that can result in suitable lattice matching for second layer of a desired crystalline structure.

Abstract translation: 形成层的方法可以包括在衬底上限定多个离散位置隔离区（SIR），在离散SIR之一上形成第一层，在第一层上形成第二层，测量晶格参数或电性质 用于形成第一层的工艺参数以不同离散SIR之间的组合方式变化，以探索可能导致对期望晶体结构的第二层的适当晶格匹配的可能层。