RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION AND PRODUCTION METHOD THEREOF

    公开(公告)号:US20200333707A1

    公开(公告)日:2020-10-22

    申请号:US16853857

    申请日:2020-04-21

    Abstract: A resist pattern-forming method includes applying a radiation-sensitive composition directly or indirectly on a substrate to form a resist film. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film is developed after the exposing. The radiation-sensitive composition includes a first complex, a compound and a second complex. The first complex includes a metal atom and a first ligand coordinating to the metal atom. The compound gives a second ligand that differs from the first ligand. The second complex includes the metal atom and the second ligand coordinating to the metal atom.

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