公开(公告)号：US20070164214A1

公开(公告)日：2007-07-19

申请号：US11513197

申请日：2006-08-31

申请人： Sang-jun Choi ,  Jung-Hyun Lee ,  Sang-bong Bang ,  Bum-seok Seo ,  Chang-soo Lee

发明人： Sang-jun Choi ,  Jung-Hyun Lee ,  Sang-bong Bang ,  Bum-seok Seo ,  Chang-soo Lee

IPC分类号： G12B21/02

CPC分类号： G01Q70/12 ,  G01Q70/14 ,  Y10S977/876 ,  Y10S977/879

摘要： A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.

摘要翻译： 提供导电性碳纳米管尖端及其制造方法。 导电性碳纳米管尖端包括基本上垂直放置在基板上的碳纳米管尖端和覆盖碳纳米管尖端的表面并延伸到基板的至少一部分的钌涂层。 制造方法包括将碳纳米管尖端基本上垂直放置在基板上，并且在碳纳米管尖端和基板的至少一部分上形成钌涂层。

公开(公告)号：US06243553B1

公开(公告)日：2001-06-05

申请号：US09466913

申请日：1999-12-20

申请人： Jin-soo Lee ,  Chang-soo Lee ,  Jin-geun Kwak

发明人： Jin-soo Lee ,  Chang-soo Lee ,  Jin-geun Kwak

IPC分类号： G03G1510

CPC分类号： G03G15/11 ,  G03G15/101 ,  G03G2215/017

摘要： A developer cleaning method for a liquid electrophotographic printer is achieved by developing an electrostatic latent image by supplying developer supplied from an injection nozzle to a photoreceptor medium via a development roller, removing drip developer formed on the photoreceptor web between a squeegee roller and the development roller, removing developer remaining between the injection nozzle and the development roller, and reducing an electrical potential of the development roller after development so that toner particles included in the drip developer are transferred to the development roller due to a difference in electrical potential.

摘要翻译： 液体电子照相打印机的显影剂清洗方法是通过将从注射喷嘴供给的显影剂经由显影辊供给到感光体介质的显影静电潜像来实现的，除去在刮板辊和显影辊之间的感光体网上形成的滴液显影剂 去除在喷嘴和显影辊之间残留的显影剂，并且在显影之后降低显影辊的电位，使包含在滴液显影剂中的调色剂颗粒由于电位差而转移到显影辊。

公开(公告)号：US08495677B2

公开(公告)日：2013-07-23

申请号：US12164387

申请日：2008-06-30

申请人： Hyeon-ji Lee ,  Joon-hwan Kim ,  Chang-soo Lee

发明人： Hyeon-ji Lee ,  Joon-hwan Kim ,  Chang-soo Lee

IPC分类号： H04N5/445 ,  H04N7/173

CPC分类号： H04N5/44543 ,  H04N5/50 ,  H04N21/4345 ,  H04N21/4755 ,  H04N21/84

摘要： A broadcasting receiving apparatus includes: a receiver which receives a broadcasting signal of one of a plurality of broadcasting channels, the broadcasting channels belonging to at least one of a plurality of channel categories; and a controller which deletes a broadcasting channel having the channel category selected by a user from a memory channel group including memory broadcasting channels among the plurality of the broadcasting channels, and controls the receiver to receive a broadcasting signal of one of the broadcasting channels selected by a user from the memory channel group excluding the broadcasting channel.

摘要翻译： 广播接收装置包括：接收多个广播频道之一的广播信号的接收机，属于多个频道类别中的至少一个的广播频道; 以及控制器，其从包括多个广播频道中的存储广播信道的存储器通道组中删除由用户选择的具有频道类别的广播频道，并且控制所述接收机接收由所述广播频道选择的广播频道之一的广播信号 来自除了广播频道的存储信道组的用户。

公开(公告)号：US08155718B2

公开(公告)日：2012-04-10

申请号：US11227268

申请日：2005-09-16

申请人： Chang-Heum Byun ,  Jong-Gun Bae ,  Sung-Ill Kang ,  Seung-Hwan Lee ,  In-Gon Park ,  Chang-soo Lee

发明人： Chang-Heum Byun ,  Jong-Gun Bae ,  Sung-Ill Kang ,  Seung-Hwan Lee ,  In-Gon Park ,  Chang-soo Lee

IPC分类号： H04M1/00

CPC分类号： H04M1/0237 ,  H04M1/0227 ,  H04M1/0233 ,  Y10S248/917 ,  Y10T16/540255 ,  Y10T16/54038 ,  Y10T16/54056

摘要： Disclosed herein is a sliding/hinge apparatus for sliding/rotating type mobile terminals, which can be slid and rotated from a body housing of the sliding/rotating type mobile terminal. The sliding/rotating type mobile terminal includes a body housing and a slide housing slidably mounted on the body housing. The apparatus comprises first and second hinge frames mounted in the body housing by means of screws, first and second plates, one or more slide bars, and a coupling unit inserted through the center parts of the first and second hinge frames so that the first and second hinge frames are rotatably coupled with each other while being opposite to each other.

摘要翻译： 这里公开了一种用于滑动/旋转型移动终端的滑动/铰链装置，其可以从滑动/旋转式移动终端的主体壳体滑动和旋转。 滑动/旋转式移动终端包括主体壳体和可滑动地安装在主体壳体上的滑动壳体。 该装置包括通过螺钉，第一和第二板，一个或多个滑动杆以及通过第一和第二铰链框架的中心部分插入的联接单元安装在主体壳体中的第一和第二铰链框架，使得第一和第二铰链框架 第二铰链框架彼此相对地可旋转地联接。

公开(公告)号：US20100200908A1

公开(公告)日：2010-08-12

申请号：US12656681

申请日：2010-02-12

申请人： Jung-hyun Lee ,  Young-eal Kim ,  Chang-soo Lee ,  Dong-joon Ma

发明人： Jung-hyun Lee ,  Young-eal Kim ,  Chang-soo Lee ,  Dong-joon Ma

IPC分类号： H01L27/115 ,  H01L21/8246

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582

摘要： Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.

摘要翻译： 提供一种具有垂直折叠结构的非易失性存储器件和制造非易失性存储器件的方法。 半导体结构包括基本垂直的第一和第二部分。 沿着半导体结构的第一和第二部分布置多个存储单元并串联连接。

公开(公告)号：US20100019217A1

公开(公告)日：2010-01-28

申请号：US12574783

申请日：2009-10-07

申请人： Du-eung Kim ,  Chang-soo Lee ,  Woo-yeong Cho ,  Byung-gil Choi

发明人： Du-eung Kim ,  Chang-soo Lee ,  Woo-yeong Cho ,  Byung-gil Choi

IPC分类号： H01L47/00 ,  H01L21/06

CPC分类号： G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675 ,  Y10S977/754

摘要： A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.

摘要翻译： 相变存储器件包括半导体衬底，布置在半导体衬底上的位线和字线彼此相交的相变存储器件，以及插入位线和字线之间的相变材料带，并且沿相对方向 其基本上平行于字线的至少一部分。

公开(公告)号：US07613037B2

公开(公告)日：2009-11-03

申请号：US11529323

申请日：2006-09-29

申请人： Du-eung Kim ,  Chang-soo Lee ,  Woo-yeong Cho ,  Byung-gil Choi

发明人： Du-eung Kim ,  Chang-soo Lee ,  Woo-yeong Cho ,  Byung-gil Choi

IPC分类号： G11C11/00

CPC分类号： G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675 ,  Y10S977/754

摘要： A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.

摘要翻译： 相变存储器件包括半导体衬底，布置在半导体衬底上的位线和字线彼此相交的相变存储器件，以及插入位线和字线之间的相变材料带，并且沿相对方向 其基本上平行于字线的至少一部分。

公开(公告)号：US20080169459A1

公开(公告)日：2008-07-17

申请号：US12003136

申请日：2007-12-20

申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Hyung-jin Bae ,  Chang-soo Lee

发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Hyung-jin Bae ,  Chang-soo Lee

IPC分类号： H01L45/00

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.

摘要翻译： 提供一种电阻随机存取存储器件及其制造方法。 电阻随机存取存储器件包括开关器件和连接到开关器件的存储节点，并且存储节点包括第一电极和第二电极以及由Cu 2-X X形成的电阻变化层， O在第一电极和第二电极之间。

公开(公告)号：US20070196984A1

公开(公告)日：2007-08-23

申请号：US11655191

申请日：2007-01-19

申请人： Jung-hyun Lee ,  Sang-bong Bang ,  Sang-jun Choi ,  Bum-seok Seo ,  Chang-soo Lee

发明人： Jung-hyun Lee ,  Sang-bong Bang ,  Sang-jun Choi ,  Bum-seok Seo ,  Chang-soo Lee

IPC分类号： H01L21/336

CPC分类号： C23C14/46 ,  C23C14/0052 ,  C23C14/08 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.

摘要翻译： 提供一种非易失性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法。 该装置可以包括能够保持基板的室，向基板排出颗粒的颗粒排放目标，以及加速第一多个离子并将加速离子朝向基板照射的第一离子束枪。 制造非易失性存储器件的方法可以包括将靶从靶向衬底排放，加速和照射第一多个离子朝向衬底，通过使排出的微粒和加速和照射的第一多个离子反应形成反应产物， 以及在所述基板上形成具有沉积层的数据存储层。 非易失性存储装置可以包括数据存储层，该数据存储层包括通过使放电的过渡金属颗粒和加速和照射的氧离子反应而形成的过渡金属氧化物层。

公开(公告)号：US07255768B2

公开(公告)日：2007-08-14

申请号：US11004096

申请日：2004-12-06

申请人： Young-chul Ko ,  Jin-ho Lee ,  Chang-soo Lee

发明人： Young-chul Ko ,  Jin-ho Lee ,  Chang-soo Lee

IPC分类号： B29C65/00

CPC分类号： B81C3/001 ,  B81B2201/047 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C2203/031 ,  Y10T428/12597

摘要： Provided are an anodic bonding structure, a fabricating method thereof, and a method of manufacturing an optical scanner using the same. Provided anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes at least one dielectric and at least one metal layer deposited between the substrate and the glass substrate, with a dielectric arranged uppermost, wherein the uppermost dielectric and the glass substrate are anodic bonded. Provided method of fabricating an anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes an act of depositing at least one dielectric and at least one metal layer between the substrate and the glass substrate, with dielectric arranged uppermost, and an act of anodic bonding the uppermost dielectric with the glass substrate. In the provided structure of depositing the metal layer and the dielectric between the substrate and the glass substrate, the dielectric and the glass substrate or the dielectric and the metal layer are anodic bonded so that a stable performance is attained to manufacture various micro-electromechanical systems (MEMS) devices.

摘要翻译： 本发明提供阳极结合结构及其制造方法，以及使用其制造光学扫描器的方法。 提供了具有衬底和布置在衬底上方的玻璃衬底的阳极结合结构，包括沉积在衬底和玻璃衬底之间的至少一个电介质和至少一个金属层，电介质布置在最上面，其中最上面的电介质和玻璃衬底 阳极结合。 提供一种制造具有布置在基板上方的基板和玻璃基板的阳极结合结构的方法，包括在基板和玻璃基板之间沉积至少一个电介质和至少一个金属层的动作，其中电介质布置在最上面，并且 将最上面的电介质与玻璃基板阳极接合。 在提供的金属层和电介质在基板和玻璃基板之间沉积的结构中，电介质和玻璃基板或电介质和金属层被阳极接合，从而获得稳定的性能来制造各种微机电系统 （MEMS）器件。