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    Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the same
    3.
    发明申请
    Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the same 审中-公开
    非挥发性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法

    公开(公告)号：US20070196984A1

    公开(公告)日：2007-08-23

    申请号：US11655191

    申请日：2007-01-19

    申请人： Jung-hyun Lee ,  Sang-bong Bang ,  Sang-jun Choi ,  Bum-seok Seo ,  Chang-soo Lee

    发明人： Jung-hyun Lee ,  Sang-bong Bang ,  Sang-jun Choi ,  Bum-seok Seo ,  Chang-soo Lee

    IPC分类号： H01L21/336

    CPC分类号： C23C14/46 ,  C23C14/0052 ,  C23C14/08 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

    摘要： Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.

    摘要翻译： 提供一种非易失性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法。 该装置可以包括能够保持基板的室，向基板排出颗粒的颗粒排放目标，以及加速第一多个离子并将加速离子朝向基板照射的第一离子束枪。 制造非易失性存储器件的方法可以包括将靶从靶向衬底排放，加速和照射第一多个离子朝向衬底，通过使排出的微粒和加速和照射的第一多个离子反应形成反应产物， 以及在所述基板上形成具有沉积层的数据存储层。 非易失性存储装置可以包括数据存储层，该数据存储层包括通过使放电的过渡金属颗粒和加速和照射的氧离子反应而形成的过渡金属氧化物层。

    Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO
    4.
    发明申请
    Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO 有权
    使用SRO制造富硅氧化物（SRO）和半导体器件的方法

    公开(公告)号：US20070072424A1

    公开(公告)日：2007-03-29

    申请号：US11519083

    申请日：2006-09-12

    申请人： Jung-Hyun Lee ,  Sang-Bong Bang

    发明人： Jung-Hyun Lee ,  Sang-Bong Bang

    IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/31 ,  H01L21/461 ,  H01L21/469

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45529 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/32055 ,  H01L29/66825 ,  H01L29/66833

    摘要： Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to form a silicon oxide layer, absorbing a second silicon source gas onto the substrate and reducing the second absorbed layer to form a silicon layer. The combination of the silicon oxide layer(s) and the silicon layer(s) comprise, in turn, a composite SRO layer. These manufacturing methods facilitate control of the oxygen concentration in the SRO, the relative thicknesses of the silicon oxide and silicon layers, and provides improved step coverage, thus allowing the manufacturing of high quality semiconductor devices.

    摘要翻译： 提供了制造用于制造半导体器件的富硅氧化物（SRO）层的方法，例如非易失性存储器件，以及用于制造并入这种SRO层的半导体器件的方法。 所述方法包括将第一硅源气体吸收到衬底上，氧化第一吸收层以形成氧化硅层，将第二硅源气体吸收到衬底上并还原第二吸收层以形成硅层。 氧化硅层和硅层的组合又包括复合SRO层。 这些制造方法有助于控制SRO中的氧浓度，氧化硅和硅层的相对厚度，并提供改进的台阶覆盖，从而允许制造高质量的半导体器件。

    Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO
    8.
    发明授权
    Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO 有权
    使用SRO制造富硅氧化物（SRO）和半导体器件的方法

    公开(公告)号：US07410913B2

    公开(公告)日：2008-08-12

    申请号：US11519083

    申请日：2006-09-12

    申请人： Jung-Hyun Lee ,  Sang-Bong Bang

    发明人： Jung-Hyun Lee ,  Sang-Bong Bang

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45529 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/32055 ,  H01L29/66825 ,  H01L29/66833

    摘要： Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to form a silicon oxide layer, absorbing a second silicon source gas onto the substrate and reducing the second absorbed layer to form a silicon layer. The combination of the silicon oxide layer(s) and the silicon layer(s) comprise, in turn, a composite SRO layer. These manufacturing methods facilitate control of the oxygen concentration in the SRO, the relative thicknesses of the silicon oxide and silicon layers, and provides improved step coverage, thus allowing the manufacturing of high quality semiconductor devices.

    摘要翻译： 提供了制造用于制造半导体器件的富硅氧化物（SRO）层的方法，例如非易失性存储器件，以及用于制造并入这种SRO层的半导体器件的方法。 所述方法包括将第一硅源气体吸收到衬底上，氧化第一吸收层以形成氧化硅层，将第二硅源气体吸收到衬底上并还原第二吸收层以形成硅层。 氧化硅层和硅层的组合又包括复合SRO层。 这些制造方法有助于控制SRO中的氧浓度，氧化硅和硅层的相对厚度，并提供改进的台阶覆盖，从而允许制造高质量的半导体器件。