公开(公告)号：US20230185144A1

公开(公告)日：2023-06-15

申请号：US18164809

申请日：2023-02-06

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20220367528A1

公开(公告)日：2022-11-17

申请号：US17876063

申请日：2022-07-28

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Hajime WATAKABE ,  Kazufumi WATABE

IPC: H01L27/12 ,  H02J13/00 ,  G06F1/26 ,  H04L41/069 ,  H04L47/2416 ,  H04L67/12

Abstract: A semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

公开(公告)号：US20220342264A1

公开(公告)日：2022-10-27

申请号：US17723468

申请日：2022-04-19

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA

IPC: G02F1/1362 ,  G02F1/1334 ,  G02F1/1368 ,  G02F1/1343

Abstract: According to one embodiment, a display device includes a first substrate including a scanning line, a first inorganic insulating film, an oxide semiconductor, and a first light-shielding wall. The first inorganic insulating film, in planer view, includes a first groove formed between the oxide semiconductor and a light-emitting module. The first light-shielding wall is disposed on the first groove.

公开(公告)号：US20220173247A1

公开(公告)日：2022-06-02

申请号：US17522258

申请日：2021-11-09

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Hajime WATAKABE ,  Takuo KAITOH ,  Ryo ONODERA

IPC: H01L29/786

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode.

公开(公告)号：US20210391359A1

公开(公告)日：2021-12-16

申请号：US17459423

申请日：2021-08-27

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Akihiro HANADA ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US20210320158A1

公开(公告)日：2021-10-14

申请号：US17304569

申请日：2021-06-23

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: H01L27/32 ,  G02F1/1333

Abstract: The purpose of the present invention is to increase ON current of the oxide semiconductor thin film transistor. An example of the structure that attains the purpose is: a display device having a substrate and a thin film transistor of an oxide semiconductor formed on the substrate including: a thickness of a source region and a drain region is thicker than a thickness of a channel region of the oxide semiconductor, the channel region has projections at portions contacting the source region and the drain region, a thickness of the projection is thicker than a thickness of the center of the channel region, and a thickness of the projection is thicker than a thickness of the source region and the drain region.

公开(公告)号：US20210240042A1

公开(公告)日：2021-08-05

申请号：US17159154

申请日：2021-01-27

Applicant: Japan Display Inc.

Inventor： Ryo ONODERA ,  Hajime WATAKABE ,  Akihiro HANADA

IPC: G02F1/1362

Abstract: A high definition display device is provided. The display device includes an array substrate, and an opposing substrate. The array substrate has a substrate, and on the substrate, a first pixel having a first color filter and a second pixel having a second color filter disposed adjacent to the first pixel. Each of the first color filter and the second color filter has a first dielectric layer, a transmissive layer disposed on the first dielectric layer, and a second dielectric layer disposed on the transmissive layer. The transmissive layer of the first color filter has a first film thickness, and the transmissive layer of the second color filter has a second film thickness larger than the first film thickness. On the transmissive layer of the second color filter, a first layer different from the transmissive layer is disposed on a side of the transmissive layer of the first color filter. A height of a bottom face of the first layer is equal to the first film thickness.

公开(公告)号：US20200259020A1

公开(公告)日：2020-08-13

申请号：US16785662

申请日：2020-02-10

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US20250126845A1

公开(公告)日：2025-04-17

申请号：US18960190

申请日：2024-11-26

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Masashi TSUBUKU

IPC: H10D30/67

Abstract: The purpose of the present invention is to suppress a variation in a threshold voltage (Δ Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.

公开(公告)号：US20240168335A1

公开(公告)日：2024-05-23

申请号：US18502178

申请日：2023-11-06

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Ryo ONODERA ,  Tomoyuki ITO ,  Yoshinori TANAKA

IPC: G02F1/13357 ,  G02F1/1334 ,  H01L27/12

CPC classification number: G02F1/133615 ,  G02F1/1334 ,  H01L27/1225

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.