公开(公告)号：US11581488B2

公开(公告)日：2023-02-14

申请号：US17106818

申请日：2020-11-30

Applicant: Japan Display Inc.

Inventor： Hiroshi Kawanago ,  Kazufumi Watabe

IPC: H01L27/32 ,  H01L51/00 ,  H05B33/10 ,  H05B33/12 ,  H05B45/60 ,  H01L51/52

Abstract: A method of manufacturing a display device, including: a stacking step of stacking, on a glass substrate, a sacrificial resin layer, a metal layer, a transparent metal oxide layer, a base material resin layer, and a functional layer including at least one of a pixel circuit-constituting layer driving a plurality of pixels and a color filter layer, in this order; a radiating step of radiating a pulsed light of a xenon flash lamp to the metal layer through the glass substrate and the sacrificial resin layer; and a detaching step of reducing a force of adhesion between the sacrificial resin layer and the metal layer with the pulsed light radiated in the radiating step, and detaching the sacrificial resin layer from the metal layer.

公开(公告)号：US20210288078A1

公开(公告)日：2021-09-16

申请号：US17336620

申请日：2021-06-02

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US10824211B2

公开(公告)日：2020-11-03

申请号：US16131477

申请日：2018-09-14

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Hajime Watakabe ,  Kazufumi Watabe

IPC: H01L27/12 ,  H04L29/08 ,  H01L29/786 ,  H01L29/423 ,  H01L29/51 ,  G06F1/26 ,  H02J13/00 ,  H04L12/24 ,  H04L12/853 ,  H04Q9/02

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

公开(公告)号：US10573666B2

公开(公告)日：2020-02-25

申请号：US16011725

申请日：2018-06-19

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US10529925B2

公开(公告)日：2020-01-07

申请号：US15831452

申请日：2017-12-05

Applicant: Japan Display Inc.

Inventor： Hiroshi Kawanago ,  Kazufumi Watabe

IPC: H01L27/32 ,  H01L51/00 ,  H05B33/10 ,  H05B33/12 ,  H05B33/08 ,  H01L51/52

Abstract: A method of manufacturing a display device, including: a stacking step of stacking, on a glass substrate, a sacrificial resin layer, a metal layer, a transparent metal oxide layer, a base material resin layer, and a functional layer including at least one of a pixel circuit-constituting layer driving a plurality of pixels and a color filter layer, in this order; a radiating step of radiating a pulsed light of a xenon flash lamp to the metal layer through the glass substrate and the sacrificial resin layer; and a detaching step of reducing a force of adhesion between the sacrificial resin layer and the metal layer with the pulsed light radiated in the radiating step, and detaching the sacrificial resin layer from the metal layer.

公开(公告)号：US10068959B2

公开(公告)日：2018-09-04

申请号：US15279540

申请日：2016-09-29

Applicant: Japan Display Inc.

Inventor： Takeshi Kuriyagawa ,  Kazufumi Watabe ,  Toshihiro Sato

IPC: H01L27/32 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1345

Abstract: A manufacturing method of a display device including a pixel region including a plurality of pixels each including a light emitting element and a terminal region provided outside the pixel region and including connection terminals; the method comprising: forming a recessed portion in a part of a top surface of each of the connection terminals; forming a first inorganic insulating layer, an organic insulating layer, and a second inorganic insulating layer sequentially in the pixel region and continuously in the terminal region; and etching the first inorganic insulating layer and the second inorganic insulating layer in an area where the first inorganic insulating layer and the second inorganic insulating layer are stacked directly, the area being on the top surface except the recessed portion.

公开(公告)号：US09997737B2

公开(公告)日：2018-06-12

申请号：US15070604

申请日：2016-03-15

Applicant: Japan Display Inc.

Inventor： Kazufumi Watabe ,  Hiroshi Kawanago

IPC: H01L27/00 ,  H01L51/52 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/322 ,  H01L51/0009 ,  H01L51/0016 ,  H01L51/524 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/568

Abstract: A structure including a first resin layer and a second resin layer sandwiching a self-light emitting element layer, a first stopper layer, a first resin sacrificial layer and a first glass substrate which are stacked on the first resin layer on the opposite side of the self-light emitting element layer, and a second glass substrate stacked on the second resin layer is prepared. The first glass substrate is peeled off from the first resin sacrificial layer by irradiating the first glass substrate with a laser beam. The first resin sacrificial layer is decomposed by a chemical reaction using a gas. The first stopper layer has a resistance to the chemical reaction, and the first resin sacrificial layer is removed while leaving the first stopper layer in a step of decomposing the first resin sacrificial layer.

公开(公告)号：US09780307B2

公开(公告)日：2017-10-03

申请号：US15377128

申请日：2016-12-13

Applicant: Japan Display Inc.

Inventor： Kazufumi Watabe ,  Hiroshi Kawanago

IPC: H01L21/00 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/003 ,  H01L27/3244 ,  H01L27/3293 ,  H01L51/0024 ,  H01L51/0097 ,  H01L51/5253 ,  Y02E10/549

Abstract: A glass substrate that corresponds to a plurality of product regions and a first grid region that surrounds each of the plurality of product regions and is grid-like is prepared. A protective film that is harder than the glass substrate is formed in the first grid region. A resin layer is formed so as to cover the protective film and the glass substrate. A part of the resin layer is removed by blast processing in a second grid region that avoids the plurality of product regions, overlaps with the first grid region and surrounds each of the plurality of product regions. A circuit layer is formed on the resin layer. The glass substrate is cut along lines that pass through the second grid region where the part of the resin layer is removed. The glass substrate is peeled off from the resin layer.

公开(公告)号：US09680127B2

公开(公告)日：2017-06-13

申请号：US14808808

申请日：2015-07-24

Applicant: Japan Display Inc.

Inventor： Kazufumi Watabe

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/3244 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2251/5369

Abstract: In an organic EL display device, an improvement in the performance of a barrier film that blocks entry of a substance that causes degradation, such as moisture, into an organic electroluminescent element is achieved. The organic EL display device includes the barrier film, which is a stacked film including a barrier base material layer made of silicon oxide or silicon nitride and a base material coating layer in contact with an impregnated barrier base material layer. The barrier film blocks transmission of a substance that degrades the organic electroluminescent element. Nano-ink is applied on a surface of the barrier base material layer, and the barrier base material layer is impregnated with the nano-ink. The barrier base material layer subjected to the impregnation treatment serves as the impregnated barrier base material layer, while the nano-ink after impregnation serves as the base material coating layer.

公开(公告)号：US12100709B2

公开(公告)日：2024-09-24

申请号：US18480552

申请日：2023-10-04

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/136209 ,  G02F1/1368 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  G02F1/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H10K59/1213

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.