摘要:
Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the direction. Additionally, longitudinal tensile stress is applied to the channels.
摘要:
A restaurant system includes an electronic kiosk having opposed first and second sides. A first display is situated on the first side for use by the customer and a second display is situated on the second side for use by a bartender. The kiosk includes a first input device for use by the customer. A processor is in data communication with the displays and the first input device to retrieve data from the first input device, such as a drink order, and actuate the first and second displays. A user may select between inputting ordering options, watching television/video, or allowing advertisements to be displayed on the first display. Drink recipes may be displayed on the second display to aid a bartender in mixing drinks. The system may include a remote headset for audibly assisting a bartender with drink orders and may include an electronic mixing tin and lighted pour spout.
摘要:
A restaurant system includes an electronic kiosk having opposed first and second sides. A first display is situated on the first side for use by the customer and a second display is situated on the second side for use by a bartender. The kiosk includes a first input device for use by the customer. A processor is in data communication with the displays and the first input device to retrieve data from the first input device, such as a drink order, and actuate the first and second displays. A user may select between inputting ordering options, watching television/video, or allowing advertisements to be displayed on the first display. Drink recipes may be displayed on the second display to aid a bartender in mixing drinks. The system may include a remote headset for audibly assisting a bartender with drink orders and may include an electronic mixing tin and lighted pour spout.
摘要:
This invention pertains to a method for cleaning an automatic process device. The device is an apparatus for thermally treating a photosensitive element to form a relief surface. One or more contactable surfaces in the device can become contaminated with residue or other materials deposited from the photosensitive element during thermal treating and/or foreign bodies from ambient environment. A cleaning element having an adhesive layer on a support removes or reduces the level of contaminants on the contactable surface. The method includes passing the cleaning element through the device so that the adhesive layer contacts the contactable surfaces and thereby transfers at least one of the contaminants to the adhesive layer.
摘要:
A waste storage device includes a container (21) in which a cassette (1) is mounted. Tubing (2) is pulled through the centre of the cassette (1) to store packages (35) separated by twists. The cassette (1) is rotated relative to the container (21) to provide the twists between packages (35) by virtue of a rotatable disk (100) and user grip portion (102). The package is gripped against rotation by a gripper diaphragm (120) and is guided towards a wall of the container by a guide diaphragm (122) to prevent untwisting between packages.
摘要:
Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.
摘要:
Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic energy can be directed to sense and control the temperature of the edge support and/or wafer edge during annealing to reduce temperature roll-off or roll-up at the edge as compared to the center of the wafer. Specifically, use of an edge support having an emmisivity greater than or equal to that of the wafer during processing allows helium gas jets directed at the edge support and/or wafer edge to reduce temperature roll-up at the edge during annealing. Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.
摘要:
A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.