UTILIZING NETWORKED 3D VOLTAGE REGULATION MODULES (VRM) TO OPTIMIZE POWER AND PERFORMANCE OF A DEVICE
    21.
    发明申请
    UTILIZING NETWORKED 3D VOLTAGE REGULATION MODULES (VRM) TO OPTIMIZE POWER AND PERFORMANCE OF A DEVICE 有权
    利用网络化的3D电压调节模块(VRM)优化设备的功率和性能

    公开(公告)号:US20120159203A1

    公开(公告)日:2012-06-21

    申请号:US13399799

    申请日:2012-02-17

    IPC分类号: G06F1/26

    CPC分类号: G06F1/26

    摘要: A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.

    摘要翻译: 提出了一种使用网络化的三维电压调节模块阵列(VRM)来实时优化电压岛上部件功率使用的方法,系统和计算机程序。 联网的VRM设备并行工作,为连接的电压岛提供足够的电力,并补充系统中可能需要额外功率的重要事件的其他VRM。

    Pixel sensor cell for collecting electrons and holes
    22.
    发明授权
    Pixel sensor cell for collecting electrons and holes 有权
    用于收集电子和空穴的像素传感器单元

    公开(公告)号:US07977711B2

    公开(公告)日:2011-07-12

    申请号:US12172305

    申请日:2008-07-14

    IPC分类号: H01L27/148 H01L31/062

    摘要: The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

    摘要翻译: 本发明是像素传感器单元及其制造方法。 像素传感器单元对于给定的光量大约使可用信号加倍。 本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。 具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域,用于收集由电子辐射照射在像素传感器单元上​​产生的电子以及形成在基板表面下方的p型收集阱区域 用于收集由撞击光子产生的孔。 具有第一输入的电路结构耦合到n型收集阱区域,而第二输入端耦合到p型收集阱区域,其中像素传感器单元的输出信号是信号的差值的大小 的第一输入和第二输入的信号。

    ISOLATION WITH OFFSET DEEP WELL IMPLANTS
    24.
    发明申请
    ISOLATION WITH OFFSET DEEP WELL IMPLANTS 有权
    隔离深度较深的植入物

    公开(公告)号:US20100289082A1

    公开(公告)日:2010-11-18

    申请号:US12464206

    申请日:2009-05-12

    摘要: A method implants impurities into well regions of transistors. The method prepares a first mask over a substrate and performs a first shallow well implant through the first mask to implant first-type impurities to a first depth of the substrate. The first mask is removed and a second mask is prepared over the substrate. The method performs a second shallow well implant through the second mask to implant second-type impurities to the first depth of the substrate and then removes the second mask. A third mask is prepared over the substrate. The third mask has openings smaller than openings in the first mask and the second mask. A first deep well implant is performed through the third mask to implant the first-type impurities to a second depth of the substrate, the second depth of the substrate being greater than the first depth of the substrate. The third mask is removed and a fourth mask is prepared over the substrate, the fourth mask has openings smaller than the openings in the first mask and the second mask. Then, a second deep well implant is performed through the fourth mask to implant the second-type impurities to the second depth of the substrate.

    摘要翻译: 一种方法是将杂质掺入晶体管的阱区。 该方法在衬底上制备第一掩模,并且通过第一掩模执行第一浅阱注入,以将第一类型杂质注入到衬底的第一深度。 去除第一个掩模,并在衬底上制备第二个掩模。 该方法通过第二掩模执行第二浅井注入,以将第二类型杂质植入衬底的第一深度,然后移除第二掩模。 在衬底上制备第三个掩模。 第三掩模具有比第一掩模和第二掩模中的开口小的开口。 通过第三掩模执行第一深孔注入,以将第一类型的杂质注入衬底的第二深度,衬底的第二深度大于衬底的第一深度。 去除第三掩模并在衬底上制备第四掩模,第四掩模具有小于第一掩模和第二掩模中的开口的开口。 然后,通过第四掩模进行第二深孔注入,以将第二类型的杂质植入到衬底的第二深度。

    HIGH DYNAMIC RANGE IMAGING CELL WITH ELECTRONIC SHUTTER EXTENSIONS
    26.
    发明申请
    HIGH DYNAMIC RANGE IMAGING CELL WITH ELECTRONIC SHUTTER EXTENSIONS 有权
    高动态范围成像电池与电子切换器扩展

    公开(公告)号:US20090141155A1

    公开(公告)日:2009-06-04

    申请号:US11948463

    申请日:2007-11-30

    IPC分类号: H04N3/14

    摘要: A pixel sensor cell of improved dynamic range and a design structure including the pixel sensor cell embodied in a machine readable medium are provided. The pixel cell comprises a coupling transistor that couples a capacitor device to a photosensing region (e.g., photodiode) of the pixel cell, the photodiode being coupled to a transfer gate and one terminal of the coupling transistor. In operation, the additional capacitance is coupled to the pixel cell photodiode when the voltage on the photodiode is drawn down to the substrate potential. Thus, the added capacitance is only connected to the imager cell when the cell is nearing its charge capacity. Otherwise, the cell has a low capacitance and low leakage. In an additional embodiment, a terminal of the capacitor is coupled to a “pulsed” supply voltage signal that enables substantially full depletion of stored charge from the capacitor to the photosensing region during a read out operation of the pixel sensor cell. In various embodiments, the locations of the added capacitance and photodiode may be interchanged with respect to the coupling transistor. In addition, the added capacitor of the pixel sensor cell allows for a global shutter operation.

    摘要翻译: 提供了改进的动态范围的像素传感器单元和包括体现在机器可读介质中的像素传感器单元的设计结构。 像素单元包括将电容器器件耦合到像素单元的光敏区域(例如,光电二极管)的耦合晶体管,光电二极管耦合到传输栅极和耦合晶体管的一个端子。 在操作中,当光电二极管上的电压向下拉到衬底电位时,附加电容耦合到像素单元光电二极管。 因此,当电池接近其充电容量时,所添加的电容仅连接到成像器单元。 否则,电池具有低电容和低泄漏。 在另外的实施例中,电容器的端子耦合到“脉冲”电源电压信号,其在像素传感器单元的读出操作期间使存储的电荷从电容器到光敏区域基本上完全耗尽。 在各种实施例中,增加的电容和光电二极管的位置可以相对于耦合晶体管互换。 此外,像素传感器单元的附加电容允许全局快门操作。

    PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES
    27.
    发明申请
    PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES 有权
    用于收集电子和孔的像素传感器单元

    公开(公告)号:US20080272400A1

    公开(公告)日:2008-11-06

    申请号:US12172309

    申请日:2008-07-14

    IPC分类号: H01L31/00

    摘要: The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

    摘要翻译: 本发明是像素传感器单元及其制造方法。 像素传感器单元对于给定的光量大约使可用信号加倍。 本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。 具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域,用于收集由电子辐射照射在像素传感器单元上​​产生的电子以及形成在基板表面下方的p型收集阱区域 用于收集由撞击光子产生的孔。 具有第一输入的电路结构耦合到n型收集阱区域,而第二输入端耦合到p型收集阱区域,其中像素传感器单元的输出信号是信号的差值的大小 的第一输入和第二输入的信号。

    Method for preparing a Centella asiatica extract rich in madecassoside and in terminoloside
    28.
    发明授权
    Method for preparing a Centella asiatica extract rich in madecassoside and in terminoloside 有权
    用于制备富含十七烷基苷和末端内酯的积雪草提取物的方法

    公开(公告)号:US07402669B2

    公开(公告)日:2008-07-22

    申请号:US10537936

    申请日:2003-12-10

    IPC分类号: C07H1/00

    摘要: The invention concerns a method for preparing an extract comprising a mixture of madecassoside, terminoloside and optionally asiaticoside, an extract of Centella asiatica comprising more than 75 wt % of a mixture of madecassoside, terminoloside and asiaticoside, relative to the extract total weight, an extract of Centella asiatica comprising more than 95 wt. % of a mixture of madecassoside and terminoloside relative to the extract total weight and their use for regulating inflammatory mechanisms.

    摘要翻译: 本发明涉及一种制备提取物的方法,所述提取物包含十五烷基苷,末端内酯和任选的积雪草苷的混合物,积雪草积木的提取物,其相对于提取物总重量包含大于75重量%的十八烷基苷,末端内切酶和积雪草苷的混合物, 积雪草积雪草包含超过95wt。 相对于提取物总重量,十五烷醇和末端酯的混合物的百分比以及它们用于调节炎症机制的用途。

    Dual level contacts and method for forming
    29.
    发明授权
    Dual level contacts and method for forming 失效
    双层接触和成型方法

    公开(公告)号:US06534389B1

    公开(公告)日:2003-03-18

    申请号:US09521977

    申请日:2000-03-09

    IPC分类号: H01L213205

    CPC分类号: H01L21/76897 H01L21/76895

    摘要: A method for making electrical contacts to device regions in a semiconductor substrate, and the resulting structure, is presented. A first set of borderless contacts is initially formed. This first set of contacts is then contacted by a second series of smaller, upper-level contacts. The second set of contacts also contact the gate of the device. The structure which results has a form wherein there are stacked contacts to the diffusion layer, and a single level contact to the device gate. The structure further provides local interconnectability over gate structures.

    摘要翻译: 提出了一种用于与半导体衬底中的器件区域进行电接触的方法及其结果。 最初形成了第一套无边界接触。 然后第一组联系人被第二系列较小的上层联系人联系起来。 第二组触点也与设备的门接触。 结果是具有与扩散层的堆叠接触的形式,以及与器件栅极的单级接触。 该结构还提供了栅极结构上的局部互连性。

    Method for preparing a Centella asiatica extract rich in madecassoside and in terminoloside
    30.
    发明授权
    Method for preparing a Centella asiatica extract rich in madecassoside and in terminoloside 有权
    用于制备富含十七烷基苷和末端内酯的积雪草提取物的方法

    公开(公告)号:US08486900B2

    公开(公告)日:2013-07-16

    申请号:US13425641

    申请日:2012-03-21

    IPC分类号: A61K31/70

    摘要: The invention concerns an extract of Centella asiatica comprising more than 75 wt. % of a mixture of madecassoside, terminoloside and asiaticoside, relative to the extract total weight, an extract of Centella asiatica comprising more than 95 wt. % of a mixture of madecassoside and terminoloside relative to the extract total weight and their use for regulating inflammatory mechanisms.

    摘要翻译: 本发明涉及积雪草提取物,其包含超过75wt。 相对于提取物总重量的十五烷基苷,末端内切酶和积雪草苷的混合物的%,积雪草积聚物的提取物,其包含大于95wt。 相对于提取物总重量,十五烷醇和末端酯的混合物的百分比以及它们用于调节炎症机制的用途。