Organic light emitting diode display and manufacturing method thereof
    21.
    发明授权
    Organic light emitting diode display and manufacturing method thereof 失效
    有机发光二极管显示及其制造方法

    公开(公告)号:US08354677B2

    公开(公告)日:2013-01-15

    申请号:US13023429

    申请日:2011-02-08

    IPC分类号: H01L27/28

    摘要: An organic light emitting diode display, which can obtain a resonance effect by its metal mirror, and a manufacturing method thereof. The display includes a semiconductor layer, a dummy pattern layer, a gate insulating film, a pixel electrode, and a gate electrode. The semiconductor layer is formed of polysilicon on a base substrate. The dummy pattern layer is formed of polysilicon at a same layer level as the semiconductor layer and surrounds a light emitting region. The gate insulating film is on the base substrate while covering the semiconductor layer and the dummy pattern layer, and has recess portions corresponding to the light emitting region. The pixel electrode is filled in the recess portions, and is formed of a metal mirror multilayer including a transmissive conductive film and a reflective conductive film. The gate electrode is on the gate insulating film at a distance from the pixel electrode.

    摘要翻译: 可以通过其金属镜获得共振效果的有机发光二极管显示器及其制造方法。 显示器包括半导体层,虚拟图案层,栅极绝缘膜,像素电极和栅电极。 半导体层由基底衬底上的多晶硅形成。 虚设图案层由与半导体层相同的层级的多晶硅形成,并且包围发光区域。 栅极绝缘膜在覆盖半导体层和虚设图案层的同时在基底基板上,具有与发光区域对应的凹部。 像素电极被填充在凹部中,并且由包括透射导电膜和反射导电膜的金属镜多层构成。 栅极电极位于距离像素电极一定距离的栅极绝缘膜上。

    Organic light emitting diode display and manufacturing method thereof
    22.
    发明申请
    Organic light emitting diode display and manufacturing method thereof 有权
    有机发光二极管显示及其制造方法

    公开(公告)号:US20120074411A1

    公开(公告)日:2012-03-29

    申请号:US13067025

    申请日:2011-05-03

    IPC分类号: H01L51/52 H01L51/56

    摘要: Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

    摘要翻译: 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 顺序地形成覆盖第一存储板的第二存储板和在栅极绝缘层中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层,以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域,以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。

    ION DOPING APPARATUS AND DOPING METHOD THEREOF
    23.
    发明申请
    ION DOPING APPARATUS AND DOPING METHOD THEREOF 审中-公开
    离子装置及其掺杂方法

    公开(公告)号:US20110220810A1

    公开(公告)日:2011-09-15

    申请号:US13040795

    申请日:2011-03-04

    IPC分类号: H01J3/26 H01J27/02 G21G5/00

    摘要: An ion doping apparatus and a doping method are disclosed. In one embodiment, the apparatus includes a chamber, and a substrate driving unit configured to support and move a substrate in the chamber, wherein the substrate has a plurality of long sides and a plurality of short sides. The apparatus further includes an ion beam generator configured to generate and provide an ion beam having a width smaller than the length of the short sides of the substrate, wherein the substrate driving unit is further configured to move the substrate substantially perpendicular to the width direction of the ion beam.

    摘要翻译: 公开了一种离子掺杂装置和掺杂方法。 在一个实施例中,该装置包括一个腔室,以及一个衬底驱动单元,被配置为支撑和移动腔室中的衬底,其中衬底具有多个长边和多个短边。 该装置还包括离子束发生器,其被配置为产生并提供宽度小于衬底短边长度的离子束,其中衬底驱动单元进一步构造成使衬底基本上垂直于衬底的宽度方向 离子束。

    LASER MASK AND SEQUENTIAL LATERAL SOLIDIFICATION CRYSTALLIZATION METHOD USING THE SAME
    24.
    发明申请
    LASER MASK AND SEQUENTIAL LATERAL SOLIDIFICATION CRYSTALLIZATION METHOD USING THE SAME 失效
    使用其的激光掩模和顺序固溶化结晶方法

    公开(公告)号:US20110117731A1

    公开(公告)日:2011-05-19

    申请号:US12881104

    申请日:2010-09-13

    IPC分类号: H01L21/20 G03F1/00

    摘要: A laser mask is disclosed. In one embodiment, the laser mask includes: a mask substrate including i) at least one light transmission portion configured to transmit light therethrough and ii) a plurality of light interruption portions separated by the light transmission portion interposed therebetween. The light interruption portions are configured to block light; and a plurality of protrusion and depression regions positioned on the light interruption portions of the mask substrate. The protrusion and depression regions comprise a plurality of concave portions and a plurality of convex portions which are alternately formed.

    摘要翻译: 公开了一种激光掩模。 在一个实施例中,激光掩模包括:掩模基板,其包括:i)至少一个光透射部分,其被配置为透射光,以及ii)由光传输部分分离的多个光中断部分。 光中断部被配置为阻挡光; 以及位于掩模基板的光中断部分上的多个突出和凹陷区域。 突起和凹陷区域包括交替形成的多个凹部和多个凸部。

    Organic light emitting diode display and method for manufacturing the same
    25.
    发明申请
    Organic light emitting diode display and method for manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US20110114960A1

    公开(公告)日:2011-05-19

    申请号:US12926377

    申请日:2010-11-15

    CPC分类号: H01L27/3248 H01L27/3262

    摘要: An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.

    摘要翻译: 有机发光二极管显示器包括基板主体,在基板主体上的多晶硅半导体层,覆盖半导体层的栅极绝缘层,栅极绝缘层上的栅电极和像素电极,栅电极和 每个像素电极包括在透明导电层部分上具有栅极金属层部分的透明导电层部分,并且所述像素电极包括具有透明导电层部分的发光区域和具有透明导电层的非发光区域 部分和栅极金属层部分。

    ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME
    26.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示器及其制造方法

    公开(公告)号:US20100066240A1

    公开(公告)日:2010-03-18

    申请号:US12406197

    申请日:2009-03-18

    IPC分类号: H01J1/62 H01J9/00

    摘要: An organic light emitting display includes a first substrate having a plurality of pixel areas, a driving transistor disposed on the first substrate, an organic layer disposed on the driving transistor, a first electrode disposed on the organic layer and electrically connected to the driving transistor, an insulating layer pattern disposed on the organic layer, the insulating layer pattern having a first opening corresponding to each pixel area, a bank pattern disposed on the insulating layer pattern, the bank pattern having a second opening corresponding to the first opening, an organic light emitting layer disposed in the first and second openings, and a second electrode disposed on the organic light emitting layer.

    摘要翻译: 有机发光显示器包括具有多个像素区域的第一基板,设置在第一基板上的驱动晶体管,设置在驱动晶体管上的有机层,设置在有机层上并与驱动晶体管电连接的第一电极, 设置在所述有机层上的绝缘层图案,所述绝缘层图案具有对应于每个像素区域的第一开口,设置在所述绝缘层图案上的堤图案,所述堤图案具有对应于所述第一开口的第二开口,所述有机光 设置在第一和第二开口中的第二电极和设置在有机发光层上的第二电极。

    Organic light emitting diode display and method of manufacturing the same
    27.
    发明授权
    Organic light emitting diode display and method of manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US08796671B2

    公开(公告)日:2014-08-05

    申请号:US12413842

    申请日:2009-03-30

    IPC分类号: H01L51/52

    摘要: An organic light emitting diode display including a substrate; a light blocking layer disposed on the substrate and having a semiconductor opening; a first semiconductor pattern disposed in the semiconductor opening; a gate insulating layer disposed on the light blocking layer and the first semiconductor pattern; a first gate electrode disposed on the gate insulating layer; a first source electrode electrically connected to the first semiconductor pattern; a first drain electrode spaced apart from the first source electrode; a protective insulating layer disposed on the first source electrode and the first drain electrode, the protective insulating layer having a contact portion; a pixel electrode disposed on the protective insulating layer contacting the first drain electrode through the contact portion; an emitting layer disposed on the pixel electrode; and a common electrode disposed on the emitting layer.

    摘要翻译: 一种有机发光二极管显示器,包括基板; 遮光层,设置在所述基板上并具有半导体开口; 设置在半导体开口中的第一半导体图案; 设置在所述遮光层和所述第一半导体图案上的栅极绝缘层; 设置在所述栅极绝缘层上的第一栅电极; 电连接到第一半导体图案的第一源电极; 与所述第一源电极间隔开的第一漏电极; 保护绝缘层,设置在所述第一源电极和所述第一漏电极上,所述保护绝缘层具有接触部分; 设置在所述保护绝缘层上的像素电极,所述保护绝缘层通过所述接触部分接触所述第一漏电极; 设置在像素电极上的发光层; 以及设置在发光层上的公共电极。

    Organic light emitting diode display and manufacturing method thereof
    28.
    发明授权
    Organic light emitting diode display and manufacturing method thereof 失效
    有机发光二极管显示及其制造方法

    公开(公告)号:US08610123B2

    公开(公告)日:2013-12-17

    申请号:US13064864

    申请日:2011-04-21

    IPC分类号: H01L29/08 H01L35/24

    摘要: An organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer on the substrate; a gate insulating layer covering the semiconductor layer; a gate electrode formed in the gate insulating layer and overlapping the semiconductor layer; a pixel electrode formed in a pixel area over the gate insulating layer; an interlayer insulating layer covering the gate electrode and the gate insulating layer, and exposing the pixel electrode through a pixel opening; a source electrode and a drain electrode formed in the interlayer insulating layer and connected to the semiconductor layer; and a barrier rib covering the interlayer insulating layer, the source electrode, and the drain electrode, and the drain electrode contacts a side wall of the pixel opening and is connected to the pixel electrode. Such an OLED display may have an improved aperture ratio.

    摘要翻译: 有机发光二极管(OLED)显示器包括:基板; 衬底上的半导体层; 覆盖半导体层的栅极绝缘层; 形成在所述栅极绝缘层中且与所述半导体层重叠的栅电极; 形成在所述栅绝缘层上的像素区域中的像素电极; 覆盖所述栅电极和所述栅极绝缘层的层间绝缘层,并且使所述像素电极通过像素开口曝光; 源电极和漏电极,形成在层间绝缘层中并连接到半导体层; 并且覆盖层间绝缘层,源电极和漏电极的阻挡肋,漏电极接触像素开口的侧壁并连接到像素电极。 这样的OLED显示器可以具有改善的开口率。

    Ion implanting system
    29.
    发明授权
    Ion implanting system 有权
    离子注入系统

    公开(公告)号:US08575574B2

    公开(公告)日:2013-11-05

    申请号:US12962829

    申请日:2010-12-08

    IPC分类号: G21G5/00

    摘要: An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.

    摘要翻译: 离子注入系统包括产生离子束的离子产生系统和离子注入室,在该离子注入室中,设置有从离子产生系统产生的离子束照射的工件,并且从离子产生系统产生的离子束 单位被指示。 离子产生系统包括将离子照射到工件的上部的第一离子产生单元和将离子照射到工件的下部的第二离子产生单元。 离子注入系统a可以通过一个离子注入工艺将离子注入到大的工件中,其中离子发生单元在工件的传送方向上彼此交替排列。

    Thin-film transistor array substrate, organic light-emitting display including the same and method of manufacturing the same
    30.
    发明授权
    Thin-film transistor array substrate, organic light-emitting display including the same and method of manufacturing the same 失效
    薄膜晶体管阵列基板,包括其的有机发光显示器及其制造方法

    公开(公告)号:US08552430B2

    公开(公告)日:2013-10-08

    申请号:US13349440

    申请日:2012-01-12

    IPC分类号: H01L29/04 H01L31/20

    摘要: A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes.

    摘要翻译: 公开了一种薄膜晶体管阵列基板。 在一个实施例中,晶体管包括电容器,其包括设置在与有源层相同的层上的下电极和设置在与栅电极相同的层上的上电极。 晶体管还可以包括设置在有源层和栅电极之间以及下电极和上电极之间的第一绝缘层,第一绝缘层不设置在下电极的周边上。 晶体管还可以包括在第一绝缘层和源极和漏极之间的第二绝缘层,第二绝缘层不设置在上电极和下电极的周边上。