公开(公告)号：US07876603B2

公开(公告)日：2011-01-25

申请号：US12242228

申请日：2008-09-30

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

摘要翻译： 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US07773492B2

公开(公告)日：2010-08-10

申请号：US11405637

申请日：2006-04-18

申请人： Jun Liu ,  Mike Violette ,  Gurtej Sandhu

发明人： Jun Liu ,  Mike Violette ,  Gurtej Sandhu

IPC分类号： G11B9/00

CPC分类号： G11B9/04

摘要： A data storage device and methods for storing and reading data are provided. The data storage device includes a data storage medium and second device. The data storage medium has an insulating layer, a first electrode layer over the insulating layer and at least one layer of resistance variable material over the first electrode layer. The second device includes a substrate and at least one conductive point configured to electrically contact the data storage medium.

摘要翻译： 提供了一种用于存储和读取数据的数据存储装置和方法。 数据存储装置包括数据存储介质和第二装置。 数据存储介质具有绝缘层，绝缘层上的第一电极层和第一电极层上的至少一层电阻可变材料。 第二装置包括基板和被配置为电接触数据存储介质的至少一个导电点。

公开(公告)号：US20100177561A1

公开(公告)日：2010-07-15

申请号：US12352364

申请日：2009-01-12

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/14 ,  G11C7/00 ,  H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

摘要： A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

摘要翻译： 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

公开(公告)号：US20100110783A1

公开(公告)日：2010-05-06

申请号：US12265340

申请日：2008-11-05

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/02 ,  H01L29/82 ,  G11C11/416

CPC分类号： H01F10/329 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268

摘要： A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.

摘要翻译： 提供了包括软磁性层和耦合层的磁存储单元，以及操作存储单元的方法。 存储单元包括具有自由铁磁层和钉扎铁磁层的堆叠，并且软磁层和耦合层也可以形成为堆叠中的层。 耦合层可以引起反铁磁耦合以使自由铁磁层在与软磁层的磁化方向反平行的方向上被磁化，或者耦合层可以引起铁磁性耦合，以使得自由铁磁层在平行方向上被磁化 到软磁层的磁化。 耦合层通过耦合效应降低了存储单元的关键开关电流。

公开(公告)号：US09082956B2

公开(公告)日：2015-07-14

申请号：US13079652

申请日：2011-04-04

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： H01L29/82 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： Techniques for reducing damage in memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which damage certain regions of the memory cell structure. In one or more embodiments, certain regions of the cell structure may be sensitive to damage. For example, the free magnetic region in magnetic memory cell structures may be susceptible to demagnetization. Such regions may be substantially confined by barrier materials during the formation of the memory cell structure, such that the edges of such regions are protected from damaging processes. Furthermore, in some embodiments, a memory cell structure is formed and confined within a recess in dielectric material.

摘要翻译： 提供了减少存储单元损坏的技术。 通常使用破坏存储单元结构的某些区域的干蚀刻和/或平坦化处理来形成存储单元结构。 在一个或多个实施例中，细胞结构的某些区域可能对损伤敏感。 例如，磁存储单元结构中的自由磁区可能易于退磁。 这样的区域在形成存储单元结构期间可以基本上被阻挡材料限制，使得这些区域的边缘被保护免受损坏的过程。 此外，在一些实施例中，存储单元结构形成并限制在电介质材料的凹部内。

公开(公告)号：US08553449B2

公开(公告)日：2013-10-08

申请号：US12351517

申请日：2009-01-09

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L29/66007 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

公开(公告)号：US08503227B2

公开(公告)日：2013-08-06

申请号：US13568937

申请日：2012-08-07

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A memory cell including magnetic materials and heating materials, and methods of programming the memory cell are provided. The memory cell includes a free region, a pinned region, and a heating region configured to generate and transfer heat to the free region when a programming current is directed to the cell. The heat transferred from the heating region increases the temperature of the free region, which decreases the magnetization and the critical switching current density of the free region. In some embodiments, the heating region may also provide a current path to the free region, and the magnetization of the free region may be switched according to the spin polarity of the programming current, programming the memory cell to a high resistance state or a low resistance state.

摘要翻译： 提供包括磁性材料和加热材料的存储单元，以及编程存储单元的方法。 存储单元包括自由区域，固定区域和加热区域，该区域被配置成当编程电流被引导到单元时，产生和传递热量到自由区域。 从加热区域传递的热量增加了自由区域的温度，这降低了自由区域的磁化强度和临界开关电流密度。 在一些实施例中，加热区域还可以提供到自由区域的电流路径，并且可以根据编程电流的自旋极性来切换自由区域的磁化，将存储器单元编程为高电阻状态或低电平状态 电阻状态。

公开(公告)号：US20120300540A1

公开(公告)日：2012-11-29

申请号：US13568937

申请日：2012-08-07

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/16 ,  H01L29/82 ,  G11C11/15

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A memory cell including magnetic materials and heating materials, and methods of programming the memory cell are provided. The memory cell includes a free region, a pinned region, and a heating region configured to generate and transfer heat to the free region when a programming current is directed to the cell. The heat transferred from the heating region increases the temperature of the free region, which decreases the magnetization and the critical switching current density of the free region. In some embodiments, the heating region may also provide a current path to the free region, and the magnetization of the free region may be switched according to the spin polarity of the programming current, programming the memory cell to a high resistance state or a low resistance state.

摘要翻译： 提供包括磁性材料和加热材料的存储单元，以及编程存储单元的方法。 存储单元包括自由区域，固定区域和加热区域，该区域被配置成当编程电流被引导到单元时，产生和传递热量到自由区域。 从加热区域传递的热量增加了自由区域的温度，这降低了自由区域的磁化强度和临界开关电流密度。 在一些实施例中，加热区域还可以提供到自由区域的电流路径，并且可以根据编程电流的自旋极性来切换自由区域的磁化，将存储器单元编程为高电阻状态或低电平状态 电阻状态。

公开(公告)号：US08228717B2

公开(公告)日：2012-07-24

申请号：US13012661

申请日：2011-01-24

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

摘要翻译： 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US20120168705A1

公开(公告)日：2012-07-05

申请号：US12981947

申请日：2010-12-30

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： G11C13/0002 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/149

摘要： A memory array is disclosed having bipolar current-voltage (IV) resistive random access memory cells with built-in “on” state rectifying IV characteristics. In one embodiment, a bipolar switching resistive random access memory cell may have a metal/solid electrolyte/semiconductor stack that forms a Schottky diode when switched to the “on” state. In another embodiment, a bipolar switching resistive random access memory cell may have a metal/solid electrolyte/tunnel barrier/electrode stack that forms a metal-insulator-metal device when switched to the “on” state. Methods of operating the memory array are also disclosed.

摘要翻译： 公开了具有内置“on”状态整流IV特性的双极电流 - 电压（IV）电阻随机存取存储器单元的存储器阵列。 在一个实施例中，双极开关电阻随机存取存储器单元可以具有当切换到“导通”状态时形成肖特基二极管的金属/固体电解质/半导体堆叠。 在另一个实施例中，双极开关电阻随机存取存储器单元可以具有当切换到“导通”状态时形成金属 - 绝缘体 - 金属器件的金属/固体电解质/隧道势垒/电极堆叠。 还公开了操作存储器阵列的方法。