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公开(公告)号：US20210257469A1
公开(公告)日：2021-08-19
申请号：US17015474
申请日：2020-09-09
Inventor： Tomoaki INOKUCHI , Hiro GANGI , Yusuke KOBAYASHI , Masahiko KURAGUCHI , Kazuto TAKAO , Ryosuke IIJIMA , Tatsuo SHIMIZU , Tatsuya NISHIWAKI
IPC: H01L29/417 , H01L29/872 , H01L29/08
Abstract: According to one embodiment, a semiconductor device includes first, second and third conductive parts, a first semiconductor region, and a first insulating part. A direction from the first conductive part toward the second conductive part is along a first direction. The first semiconductor region includes first, second, and third partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The third partial region is between the first partial region and the second conductive part in the first direction. The third partial region includes an opposing surface facing the second conductive part. A direction from the opposing surface toward the third conductive part is along the second direction. The first insulating part includes a first insulating region. At least a portion of the first insulating region is between the opposing surface and the third conductive part.
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公开(公告)号：US20160135789A1
公开(公告)日：2016-05-19
申请号：US14921178
申请日：2015-10-23
Inventor： Takashi TAKEUCHI , Yusuke KOBAYASHI
CPC classification number: A61B5/055 , A61B6/032 , A61B8/0875 , A61B8/145 , A61B8/4254 , A61B8/4494 , A61B8/5261 , A61B8/54
Abstract: According to one embodiment, an ultrasound diagnosis apparatus is configured to generate ultrasound image data of a subject through an ultrasound probe. The ultrasound diagnosis apparatus includes a specifying unit, a transmission/reception condition change unit, and an image generator. The specifying unit specifies a characteristic site, which is included in a scanning range related to the ultrasound image data and has specific acoustic characteristics, based on three-dimensional image data of the subject generated in advance. The transmission/reception condition change unit changes transmission/reception conditions of ultrasound waves based on the acoustic characteristics of the characteristic site. The image generator generates the ultrasound image data based on changed transmission/reception conditions.
Abstract translation: 根据一个实施例，超声诊断装置被配置为通过超声波探头产生对象的超声图像数据。 超声波诊断装置包括指定单元，发送/接收条件改变单元和图像生成器。 指定单元基于预先生成的被摄体的三维图像数据来指定包括在与超声波图像数据相关的扫描范围中并具有特定声学特性的特征位置。 发送/接收条件改变单元基于特征部位的声学特性改变超声波的发送/接收条件。 图像发生器基于改变的发送/接收条件生成超声图像数据。
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公开(公告)号：US20250077719A1
公开(公告)日：2025-03-06
申请号：US18585541
申请日：2024-02-23
Inventor： Hiro GANGI , Yasunori TAGUCHI , Tomoaki INOKUCHI , Yusuke KOBAYASHI , Taichi FUKUDA
IPC: G06F30/12
Abstract: A parameter optimization device includes a processing device configured to: generate a partial search space of a second dimensionality from a search space of a first dimensionality, the second dimensionality being less than the first dimensionality; select a plurality of search points in the partial search space by correcting an acquisition function with a local penalty function; and observe, in parallel, a plurality of objective functions corresponding respectively to the plurality of search points.
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公开(公告)号：US20240274680A1
公开(公告)日：2024-08-15
申请号：US18456786
申请日：2023-08-28
Inventor： Tomoaki INOKUCHI , Yusuke KOBAYASHI , Shotaro BABA , Hiroki NEMOTO , Taichi FUKUDA , Tatsuya NISHIWAKI , Tatsuo SHIMIZU
IPC: H01L29/417 , H01L29/40 , H01L29/47
CPC classification number: H01L29/41741 , H01L29/401 , H01L29/47
Abstract: A semiconductor device includes first to third conductive portions, a first insulating portion, and a semiconductor portion. The semiconductor portion includes a first semiconductor region provided between the first conductive portion and the second conductive portion, and a second semiconductor region provided between the second conductive portion and the first insulating region. The second conductive portion includes a first conductive region in Schottky junction with the first semiconductor region, and a second conductive region in Schottky junction with the second semiconductor region. When the first conductivity-type is an n-type, a work function of the first conductive region is smaller than a work function of the second conductive region. When the first conductivity-type is a p-type, the work function of the first conductive region is larger than the work function of the second conductive region.
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公开(公告)号：US20240030344A1
公开(公告)日：2024-01-25
申请号：US18171820
申请日：2023-02-21
Inventor： Tomoaki INOKUCHI , Hiro GANGI , Yusuke KOBAYASHI , Tatsuya NISHIWAKI , Shotaro BABA , Hiroki NEMOTO , Tatsunori SAKANO
IPC: H01L29/78 , H01L29/423 , H01L29/47
CPC classification number: H01L29/7839 , H01L29/42376 , H01L29/47
Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a first semiconductor member, a third conductive member, and a third conductive member wiring. The first conductive member includes a first conductive portion including a first face and a second conductive portion including a second face. The second conductive member includes a third conductive portion including a third face and a fourth conductive portion including a fourth face. The fourth conductive portion includes a facing conductive portion. The first semiconductor member is of a first conductive type. The first semiconductor member includes a first partial region, a second partial region and a third partial region. The third partial region includes a facing face facing the facing conductive portion. The third conductive member wiring is electrically connected to the third conductive member.
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Patent Agency Ranking
公开(公告)号：US20220393008A1
公开(公告)日：2022-12-08
申请号：US17585790
申请日：2022-01-27
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Yusuke KOBAYASHI , Tatsuo SHIMIZU , Tomoaki INOKUCHI , Hiro GANGI , Hiroki NEMOTO
IPC: H01L29/417 , H01L29/66 , H01L29/40
Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other end portion. The third electrode end portion is between the first electrode and the third electrode other end portion. The first conductive member includes a first conductive member end portion and a first conductive member other end portion. The first conductive member end portion is between the first electrode and the first conductive member other end portion. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first insulating member includes silicon and oxygen. The first insulating member includes a first element including at least one selected from the group consisting of nitrogen, aluminum, hafnium and zirconium at the third position.
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公开(公告)号：US20210391458A1
公开(公告)日：2021-12-16
申请号：US17170962
申请日：2021-02-09
Inventor： Yusuke KOBAYASHI , Tatsunori SAKANO , Hiro GANGI , Tomoaki INOKUCHI , Takahiro KATO , Yusuke HAYASHI , Ryohei GEJO , Tatsuya NISHIWAKI
IPC: H01L29/78 , H01L29/10 , H01L29/417 , H01L29/40 , H01L21/765 , H01L29/66
Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, first and second electrodes, a gate electrode, a gate terminal, a first conductive member, a first terminal, and a first insulating member. The semiconductor member includes first and second semiconductor regions, and a third semiconductor region provided between the first and second semiconductor regions. The first electrode is electrically connected to the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The gate terminal is electrically connected to the gate electrode. The first conductive member is electrically insulated from the first and second electrodes, and the gate electrode. The first terminal is electrically connected to the first conductive member. The first insulating member includes a first insulating region between the third semiconductor region and the gate electrode, and a second insulating region between the gate electrode and the first conductive member.
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公开(公告)号：US20160111641A1
公开(公告)日：2016-04-21
申请号：US14637680
申请日：2015-03-04
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yusuke KOBAYASHI , Kikuko SUGIMAE
CPC classification number: H01L45/1253 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/148 , H01L45/16
Abstract: According to one embodiment, a memory device includes a substrate, a conductive wire provided above the substrate to extend in a first direction and including an end portion decreases in width toward a distal end, and a contact connected to the conductive wire at least a side surface of the end portion. The end portion includes, in the contact, a first portion having a shortest distance from an outer peripheral surface of the contact and a second portion extending from the first portion and having a distance from the outer peripheral surface of the contact longer than the shortest distance.
Abstract translation: 根据一个实施例，存储器件包括衬底，设置在衬底上方以在第一方向上延伸并包括朝向远端减小宽度的端部的导线，以及至少一侧连接到导线的触点 端部的表面。 所述端部在所述接点中包括与所述接触件的外周表面具有最短距离的第一部分和从所述第一部分延伸并且距所述接触件的外周表面的距离长于所述最短距离的第二部分 。
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公开(公告)号：US20250098263A1
公开(公告)日：2025-03-20
申请号：US18589766
申请日：2024-02-28
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Tomoaki INOKUCHI , Hiro GANGI , Yusuke KOBAYASHI , Shotaro BABA , Taichi FUKUDA
Abstract: A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, a gate driver supplying the gate voltage to the first gate electrode, and a recording element electrically connected with the gate driver. The recording element records, as continuously changing analog data, a number of times that the gate voltage is supplied to the first gate electrode while being enough to switch the major element on.
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公开(公告)号：US20250098207A1
公开(公告)日：2025-03-20
申请号：US18591169
申请日：2024-02-29
Inventor： Tomoaki INOKUCHI , Tatsuo SHIMIZU , Yusuke KOBAYASHI , Shotaro BABA , Hiro GANGI , Hiroki NEMOTO , Taichi FUKUDA , Tatsuya NISHIWAKI
Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.
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