公开(公告)号：US10466596B2

公开(公告)日：2019-11-05

申请号：US14186744

申请日：2014-02-21

Applicant: KLA-Tencor Corporation

Inventor： Bill Pierson ,  Ramkumar Karur-Shanmugam ,  Chin-Chou Huang ,  Ady Levy ,  John Charles Robinson

IPC: G03F7/20

Abstract: The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.

公开(公告)号：US10216096B2

公开(公告)日：2019-02-26

申请号：US15174111

申请日：2016-06-06

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith ,  Sanjay Kapasi ,  Stilian Pandev ,  Dzmitry Sanko ,  Pradeep Subrahmanyan ,  Ady Levy

IPC: G03B27/54 ,  G03F7/20

Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

公开(公告)号：US10024654B2

公开(公告)日：2018-07-17

申请号：US15091021

申请日：2016-04-05

Applicant: KLA-Tencor Corporation

Inventor： Mark D. Smith ,  Jose Solomon ,  Stuart Sherwin ,  Walter Mieher ,  Ady Levy

IPC: G01B9/02 ,  G01B11/02 ,  G01L1/24 ,  G01B11/16 ,  G01B11/24 ,  H01L21/66

Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.

公开(公告)号：US09875946B2

公开(公告)日：2018-01-23

申请号：US14252323

申请日：2014-04-14

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Stilian Ivanov Pandev ,  Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Ori Tadmor

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

公开(公告)号：US09846132B2

公开(公告)日：2017-12-19

申请号：US14515322

申请日：2014-10-15

Applicant: KLA-Tencor Corporation

Inventor： Michael S. Bakeman ,  Andrei V. Shchegrov ,  Ady Levy ,  Guorong V. Zhuang ,  John J. Hench

IPC: G01N23/00 ,  G01N23/201 ,  G01N33/00

CPC classification number: G01N23/201 ,  G01N2033/0095

Abstract: Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.

公开(公告)号：US20170045826A1

公开(公告)日：2017-02-16

申请号：US15174111

申请日：2016-06-06

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith ,  Sanjay Kapasi ,  Stilian Pandev ,  Dimitry Sanko ,  Pradeep Subrahmanyan ,  Ady Levy

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/70091 ,  G03F7/70641

Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

Abstract translation: 光刻系统包括照明源和一组投影光学元件。 照明源将来自离轴照明杆的照明光束引导到图案掩模。 图案掩模包括一组图案元件，以生成包括来自照明杆的照明的衍射光束集合。 由该组投影光学器件接收的衍射光束组中的至少两个衍射光束不对称地分布在该组投影光学器件的光瞳平面中。 衍射光束组中的至少两个衍射光束不对称地入射到样品上，以形成一组对应于该组图案元素的图像的制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示器。

公开(公告)号：US20160290789A1

公开(公告)日：2016-10-06

申请号：US15091021

申请日：2016-04-05

Applicant: KLA-Tencor Corporation

Inventor： Mark D. Smith ,  Jose Solomon ,  Stuart Sherwin ,  Walter Mieher ,  Ady Levy

IPC: G01B11/16

CPC classification number: G01B11/161 ,  G01B9/02021 ,  G01B9/02027 ,  G01B11/2441 ,  G01B2210/56 ,  H01L22/12

Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.

Abstract translation: 衬底的平面内失真的确定包括测量处于非夹角状态的衬底的一个或多个面外失真，基于所测量的外延位置来确定衬底上的薄膜在无夹持状态下的有效薄膜应力， 基于在无夹持状态下的基板的平面失真，基于在无夹持状态下的基板上的膜的有效膜应力来确定基板在夹持状态下的面内失真，并且调整处理工具或 基于测量的平面外失真或确定的平面内失真中的至少一个的覆盖工具。