利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.024 秒)

    Semiconductor memory device having trench in which word line is buried
    21.
    发明授权
    Semiconductor memory device having trench in which word line is buried 失效
    半导体存储器件具有埋入字线的沟槽

    公开(公告)号：US5398205A

    公开(公告)日：1995-03-14

    申请号：US239555

    申请日：1994-05-09

    申请人： Shinsuke Yamaguchi

    发明人： Shinsuke Yamaguchi

    IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/423 ,  G11C11/34 ,  H01L29/68

    CPC分类号： H01L27/10808 ,  H01L29/78

    摘要： A semiconductor memory device including a plurality of memory cells of one-transistor and one-capacitor type is disclosed. Each of the memory cells includes a cell active region surrounded by a trench isolation region, a trench formed to cross the cell active region to thereby divide a surface portion of the cell active region into first and second parts, a word line formed in the trench in isolation form the cell active region by a gate insulating film, source and drain regions respectively formed in the first and second parts in contact with the trench, a first insulating film formed to cover the cell active region and the word line, a bit line formed in contact with a part of the drain region through a first contact hole provided in the first insulating film, a second insulating film formed to cover the bit line and the first insulating film, a storage electrode formed in contact with a part of the source region through a second contact hole provided in the first and second insulating films, a dielectric film formed on the storage electrode, and a cell plate electrode formed on the dielectric film.

    摘要翻译： 公开了一种包括单晶体管和单电容器型的多个存储单元的半导体存储器件。 每个存储单元包括由沟槽隔离区包围的单元有源区，形成为跨越单元有源区的沟槽，从而将单元有源区的表面部分分成第一和第二部分，形成在沟槽中的字​​线 隔离形成由栅绝缘膜形成的单元有源区，分别形成在与沟槽接触的第一和第二部分中的源区和漏区，形成为覆盖单元有源区和字线的第一绝缘膜，位线 通过设置在第一绝缘膜中的第一接触孔与漏区的一部分接触形成为覆盖位线和第一绝缘膜的第二绝缘膜，与源的一部分接触形成的存储电极 通过设置在第一和第二绝缘膜中的第二接触孔，形成在存储电极上的电介质膜和形成在电介质膜上的单元板电极。

    Styrene-butadiene copolymer rubber composition
    22.
    发明授权
    Styrene-butadiene copolymer rubber composition 失效
    苯乙烯 - 丁二烯共聚物橡胶组合物

    公开(公告)号：US4575534A

    公开(公告)日：1986-03-11

    申请号：US597635

    申请日：1984-04-06

    申请人： Noboru Oshima ,  Isamu Shimizu ,  Mikio Takeuchi ,  Tatsuo Fujimaki ,  Shinsuke Yamaguchi

    发明人： Noboru Oshima ,  Isamu Shimizu ,  Mikio Takeuchi ,  Tatsuo Fujimaki ,  Shinsuke Yamaguchi

    IPC分类号： C08L7/00 ,  C08C19/44 ,  C08L9/06 ,  C08L21/00 ,  C08L23/00 ,  C08L51/00 ,  C08L51/02 ,  C08L77/00 ,  C08L101/00 ,  C08L9/00 ,  C08L53/00

    CPC分类号： C08C19/44 ,  C08L21/00

    摘要： Disclosed herein is a rubber composition comprising at least 20% by weight of styrene-butadiene copolymer based on the total weight of the rubber content. The styrene-butadiene copolymer is obtained by randomly copolymerizing styrene with 1,3-butadiene in a hydrocarbon solvent in the presence of an organolithium compound as an initiator and then subjecting to a coupling reaction with a polyfunctional coupling agent, and contains 30-70% by weight of branched polymers therein, and has the following properties:(a) a content of bound styrene in the copolymer 3-15% by weight;(b) a content of vinyl bonds contained in the butadiene units is 15-30% by weight;(c) a Mooney viscosity (ML.sub.1+4.sup.100.degree. C.) is 15-50; and(d) a molecular weight distribution of the copolymer is bimodal at a ratio Mw/Mn of 1.4-2.2 in which Mw is a weight-average molecular weight and Mn is a number-average molecular weight.

    摘要翻译： 本文公开了一种橡胶组合物，其包含基于橡胶含量的总重量的至少20重量％的苯乙烯 - 丁二烯共聚物。 苯乙烯 - 丁二烯共聚物通过在有机锂化合物作为引发剂的存在下在烃溶剂中将苯乙烯与1,3-丁二烯无规共聚而得到，然后与多官能偶联剂进行偶联反应，并含有30-70％ （a）共聚物中结合苯乙烯含量3-15％（重量）; （b）丁二烯单元中所含的乙烯基键的含量为15〜30重量％ （c）门尼粘度（ML1 + 4100℃）为15-50; 和（d）共聚物的分子量分布是双峰的，比率＆upbar＆Mw /＆lt;上升＆Mn为1.4-2.2，其中＆Upbar＆Mw为重均分子量，＆lt;上升＆Mn为数均分子量。