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公开(公告)号：US4575534A
公开(公告)日：1986-03-11
申请号：US597635
申请日：1984-04-06
IPC分类号： C08L7/00 , C08C19/44 , C08L9/06 , C08L21/00 , C08L23/00 , C08L51/00 , C08L51/02 , C08L77/00 , C08L101/00 , C08L9/00 , C08L53/00
摘要： Disclosed herein is a rubber composition comprising at least 20% by weight of styrene-butadiene copolymer based on the total weight of the rubber content. The styrene-butadiene copolymer is obtained by randomly copolymerizing styrene with 1,3-butadiene in a hydrocarbon solvent in the presence of an organolithium compound as an initiator and then subjecting to a coupling reaction with a polyfunctional coupling agent, and contains 30-70% by weight of branched polymers therein, and has the following properties:(a) a content of bound styrene in the copolymer 3-15% by weight;(b) a content of vinyl bonds contained in the butadiene units is 15-30% by weight;(c) a Mooney viscosity (ML.sub.1+4.sup.100.degree. C.) is 15-50; and(d) a molecular weight distribution of the copolymer is bimodal at a ratio Mw/Mn of 1.4-2.2 in which Mw is a weight-average molecular weight and Mn is a number-average molecular weight.
摘要翻译： 本文公开了一种橡胶组合物，其包含基于橡胶含量的总重量的至少20重量％的苯乙烯 - 丁二烯共聚物。 苯乙烯 - 丁二烯共聚物通过在有机锂化合物作为引发剂的存在下在烃溶剂中将苯乙烯与1,3-丁二烯无规共聚而得到，然后与多官能偶联剂进行偶联反应，并含有30-70％ （a）共聚物中结合苯乙烯含量3-15％（重量）; （b）丁二烯单元中所含的乙烯基键的含量为15〜30重量％ （c）门尼粘度（ML1 + 4100℃）为15-50; 和（d）共聚物的分子量分布是双峰的，比率＆upbar＆Mw /＆lt;上升＆Mn为1.4-2.2，其中＆Upbar＆Mw为重均分子量，＆lt;上升＆Mn为数均分子量。
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公开(公告)号：US4519431A
公开(公告)日：1985-05-28
申请号：US632270
申请日：1984-07-19
申请人： Yoshito Yoshimura , Noboru Oshima , Isamu Shimizu , Shinsuke Yamaguchi , Tatsuo Fujimaki , Tomoharu Yamada , Seisuke Tomita
发明人： Yoshito Yoshimura , Noboru Oshima , Isamu Shimizu , Shinsuke Yamaguchi , Tatsuo Fujimaki , Tomoharu Yamada , Seisuke Tomita
IPC分类号： C08F4/00 , C08C19/44 , C08F4/42 , C08F8/00 , C08F8/42 , C08F236/00 , C08F236/10 , C08K3/00 , C08K5/00 , C08L7/00 , C08L9/06 , C08L21/00 , B60C11/00
CPC分类号： C08C19/44 , Y10S152/905
摘要： A styrene-butadiene copolymer having a high styrene content is disclosed, which is obtained by polymerizing styrene and butadiene in a hydrocarbon solvent in the presence of an organolithium compound and, if necessary, a Lewis base and then coupling with a tin halide compound. This copolymer contains in its main chain at least 30 wt % of polymer having a tin-carbon bond and has a bound styrene content of more than 25 wt % but not more than 60 wt % and a content of vinyl bond in butadiene portion of not less than 30% but less than 50%.
摘要翻译： 公开了具有高苯乙烯含量的苯乙烯 - 丁二烯共聚物，其通过在烃溶剂中在有机锂化合物和（如果需要的话）路易斯碱存在下聚合苯乙烯和丁二烯，然后与卤化锡化合物偶合而获得。 该共聚物在其主链中含有至少30重量％的具有锡 - 碳键的聚合物，并且具有大于25重量％但不超过60重量％的结合苯乙烯含量，并且丁二烯部分中的乙烯基键含量不为 小于30％但小于50％。
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公开(公告)号：US4603722A
公开(公告)日：1986-08-05
申请号：US655288
申请日：1984-09-28
CPC分类号： C08C19/44 , B60C1/0016
摘要： A branched styrene-butadiene copolymer and a pneumatic tire using the same as a tread base rubber are disclosed. This copolymer is produced by coupling an active styrene-butadiene copolymer anion, which is obtained by polymerizing styrene and butadiene in a hydrocarbon solvent in the presence of ether or a tertiary amine and an initiator of an organolithium compound, with a tin halide compound. In the copolymer, the ratio of branched copolymer connected with tin-butadienyl bond is at least 20% by weight, and the content of bound styrene is not less than 3% by weight but less than 25% by weight, and the content of vinyl bond in butadiene portion is not less than 30% but less than 50%.
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4.发明授权
公开(公告)号：US4526934A
公开(公告)日：1985-07-02
申请号：US473394
申请日：1983-03-08
CPC分类号： C08C19/44 , B60C1/0016
摘要： A branched styrene-butadiene copolymer and a pneumatic tire using the same as a tread base rubber are disclosed. This copolymer is produced by coupling an active styrene-butadiene copolymer anion, which is obtained by polymerizing styrene and butadiene in a hydrocarbon solvent in the presence of ether or a tertiary amine and an initiator of an organolithium compound, with a tin halide compound. In the copolymer, the ratio of branched copolymer connected with tin-butadienyl bond is at least 20% by weight, and the content of bound styrene is not less than 3% by weight but less than 25% by weight, and the content of vinyl bond in butadiene portion is not less than 30% but less than 50%.
摘要翻译： 公开了一种支化苯乙烯 - 丁二烯共聚物和使用该共聚物作为胎面基橡胶的充气轮胎。 该共聚物是通过在醚或叔胺和有机锂化合物的引发剂存在下在烃溶剂中将苯乙烯和丁二烯聚合得到的活性苯乙烯 - 丁二烯共聚物阴离子与卤化锡化合物而制备的。 在共聚物中，与锡 - 丁二烯基键相连的支链共聚物的比例为至少20重量％，结合苯乙烯的含量不小于3重量％但小于25重量％，乙烯基含量 丁二烯部分中的键不小于30％但小于50％。
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公开(公告)号：US4540744A
公开(公告)日：1985-09-10
申请号：US701438
申请日：1985-02-12
申请人： Noboru Oshima , Isamu Shimizu , Yoshito Yoshimura
发明人： Noboru Oshima , Isamu Shimizu , Yoshito Yoshimura
IPC分类号： C08F4/00 , C08C19/44 , C08F4/42 , C08F8/42 , C08F36/00 , C08F36/04 , C08F236/00 , C08F236/10 , C08L9/00 , C08L21/00
CPC分类号： C08C19/44 , C08F36/04 , Y10S525/901
摘要： A butadiene-base polymer containing a branched polymer through tin-carbon bond and a process for producing the same are disclosed. The butadiene-base polymer is produced by polymerizing 1,3-butadiene alone or 1,3-butadiene and aromatic vinyl compound in a hydrocarbon solvent in the presence of a Lewis base using an organolithium compound as an initiator and then coupling with a tin halide, and satisfies the following requirements:(1) a content of a bound aromatic vinyl compound in the butadiene-base polymer is 0-40% by weight;(2) a ratio of vinyl bond-containing butadiene unit in the toal butadiene unit of the butadiene-base polymer is 30-90%;(3) a ratio of the branched polymer in the butadiene-base polymer is at least 30% by weight; and(4) a ratio of a component having a molecular weight of less than 100,000 as polystyrene in the molecular weight distribution as measured by a gel permeation chromatography is 10-20% by weight.
摘要翻译： 公开了含有通过锡 - 碳键的支化聚合物的丁二烯基聚合物及其制备方法。 丁二烯基聚合物通过使用有机锂化合物作为引发剂在路易斯碱存在下在烃溶剂中在单独的1,3-丁二烯和1,3-丁二烯和芳香族乙烯基化合物上聚合，然后与卤化锡 ，并且满足以下要求：（1）丁二烯基聚合物中结合的芳香族乙烯基化合物的含量为0〜40重量％ （2）丁二烯类聚合物的丁二烯单元中的含乙烯基键的丁二烯单元的比例为30〜90％。 （3）丁二烯类聚合物中的支链聚合物的比例为30重量％以上。 和（4）通过凝胶渗透色谱法测定的分子量分布中聚苯乙烯的分子量小于100,000的成分的比例为10〜20重量％。
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公开(公告)号：US5322568A
公开(公告)日：1994-06-21
申请号：US999548
申请日：1992-12-31
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译： 一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此 形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体 前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中， 并允许他们作出反应 彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。
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公开(公告)号：US4868014A
公开(公告)日：1989-09-19
申请号：US3054
申请日：1987-01-13
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/452 , G03G5/082 , H01L21/205 , H01L21/336 , H01L31/20
CPC分类号： H01L29/66757 , C23C16/452 , G03G5/08235 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50
摘要： A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
摘要翻译： 一种用于形成薄膜多层结构构件的方法，所述薄膜多层结构构件具有至少一种受限于价电子的半导体薄膜和在带隙中调节的半导体薄膜中的至少一种，包括形成至少一层 半导体薄膜通过对由成膜空间中具有催化作用的过渡金属元素的单一物质或合金构成的发热元件进行加热而产生发热，使起始材料（A）为 在分子中含有卤素和氢的至少一种元素的沉积膜形成物和含有成为价电子控制器和带隙调节剂中的至少一种的元素的化合物（B），其在发热下与发热元件接触 导致热解离反应进行活化，从而形成成为沉淀的起始原料的前体（X） 并且使用前体（X）作为薄膜的构成元素的供给源，以及通过引入用于沉积膜形成的气态原料（a）形成至少一层其它薄膜的步骤，以及 具有起始材料（a）的氧化作用的气态卤素氧化剂进入反应空间以实现其间的接触，由此在激发态下化学形成包含前体的多种前体，并使用至少一种前体前体作为 用于沉积膜的构成元件的馈送源。
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公开(公告)号：US4865883A
公开(公告)日：1989-09-12
申请号：US298202
申请日：1989-01-17
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/452 , H01L21/205
CPC分类号： C23C16/407
摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.
摘要翻译： 形成沉积膜的方法包括引入含有In原子或Sn原子的气态原料以形成沉积膜，将具有所述原料氧化作用的气态卤素氧化剂和含氧气体化合物引入到 反应空间以在其间进行化学接触从而形成多个在激发态下含有前体的前体，并且使用这些前体的至少一种前体作为进料，在存在于成膜空间中的基底上形成沉积膜 源的沉积膜的构成元素。
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9.发明授权Method for forming deposited film by generating precursor with halogenic oxidizing agent 失效用卤素氧化剂生成前体形成沉积膜的方法
公开(公告)号：US4861623A
公开(公告)日：1989-08-29
申请号：US942209
申请日：1986-12-16
申请人： Masao Ueki , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Masao Ueki , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/44 , H01L21/205 , H01L21/3205
CPC分类号： H01L21/32053
摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.
摘要翻译： 形成沉积膜的方法包括引入含硅和/或锗原子的气态原料; 含有选自铝（Al），钼（Mo），钨（W），钛（Ti）和钽（Ta））中的至少一种的起始材料，其能够转化为气态; 以及对所述成膜原料发挥氧化作用的气态卤素氧化剂进入反应空间，以使其间发生接触，从而化学形成含激发态前体的多种前体，并在其上形成沉积膜 存在于成膜空间中的底物通过使用至少一种所述本体的前体作为沉积膜的组成元素的进料源。
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公开(公告)号：US4844950A
公开(公告)日：1989-07-04
申请号：US942213
申请日：1986-12-16
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/06 , C23C16/30 , C23C16/44 , H01L21/205
CPC分类号： C23C16/06
摘要： A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
摘要翻译： 形成沉积膜的方法包括向反应空间引入含有用于形成沉积膜的过渡金属元素的可气化起始材料和具有用于所述起始材料的氧化作用的气态卤素氧化剂以在其间进行接触从而 在激发态下化学形成多种前体，包括前体，并且使用这些前体的至少一种前体作为沉积的构成元素的进料源，在存在于成膜空间中的基底上形成金属沉积膜 电影。
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