摘要:
In a semiconductor device, a first semiconductor substrate includes a first element on a first-surface side thereof, and a second semiconductor substrate includes a second element and a wiring part on a first-surface side thereof. The first semiconductor substrate and the second semiconductor substrate are attached with each other in such a manner that a first surface of the first semiconductor substrate is opposite a first surface of the second semiconductor substrate. A hole is provided from a second surface of the first semiconductor substrate to the wiring part through the first semiconductor substrate, and a sidewall of the hole is insulated. A drawing wiring part made of a conductive member fills the hole.
摘要:
A physical sensor includes: a substrate having a silicon layer, an oxide film and a support layer; and a sensor portion having movable and fixed electrodes and a lower electrode. The movable electrode is supported by a beam on the support layer. The fixed electrode faces the movable electrode. The lower electrode is disposed on the support layer and faces the movable electrode. The physical sensor detects horizontal physical quantity based on a capacitance between the movable and fixed electrodes, and vertical physical quantity based on a capacitance between the movable and lower electrodes. The beam includes vertical and horizontal beams. The thickness of the vertical beam is smaller than the thickness of the horizontal beam.
摘要:
A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.
摘要:
A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.
摘要:
In an attachment structure, a protective cap is provided with an adhesion layer on its outer peripheral edge part and its internal surface. The protective cap is bonded and fixed to an adherend member through the adhesion layer. This attachment structure can be suitably used for a semiconductor device. Alternatively, in a semiconductor device, a protective cap can be bonded using an adhesive. In this case, an outer peripheral edge part of the protective cap has a first end positioned on its inner rim surface, and a second end positioned on its outer rim surface. Furthermore, the first end protrudes toward a sensor chip more than the second end, and is adjacent to the sensor chip.
摘要:
A method of manufacturing a micro-structure includes dry-etching a sacrificial layer provided to a silicon substrate to form structures the sacrificial layer reacting with etching gas to generate reaction products including H2O, wherein the dry-etching includes etching the sacrificial layer and removing H2O as one of the reaction products generated through the etching step of the sacrificial layer, wherein the etching and the removing of H2O are repetitively performed.
摘要翻译:制造微结构的方法包括干法蚀刻设置在硅衬底上的牺牲层,以形成牺牲层与蚀刻气体反应产生包含H 2 O 2的反应产物的结构, 蚀刻包括蚀刻牺牲层并除去H 2 O作为通过牺牲层的蚀刻步骤产生的反应产物之一,其中蚀刻和除去H 2 O 2 O重复执行。
摘要:
A moringa extract containing a benzyl glucosinolate in a content of 6% by mass or more, calculated as a dry solid content of the extract, wherein the extract does not substantially contain an alkaloid. The moringa extract of the present invention for solving a first aspect is useful in the field of foodstuff or the like. Also, the PPAR activator of the present invention for solving a second aspect has excellent PPAR activation action, and has no disadvantages in side effects, so that it can be ingested for long term, which can be preferably used in foodstuff and the like. Therefore, the PPAR activator of the present invention for solving a second aspect can be expected to be used as a food, a supplement or a medicament not only for prevention of disease such as insulin resistance, hyperinsulinism, Type 2 diabetes, hypertension, hyperlipidemia, arterial sclerosis and obesity, but also for fatigue recovery or endurance improvement by improving basal metabolism. In addition, a benzyl glucosinolate-containing composition for solving a third aspect is useful in the field of foodstuff or the like.
摘要:
A computer-readable medium causes an information processing apparatus capable of performing a plurality of setting processing for making a setting in accordance with a predetermined sequence to perform processing including a first display control process including displaying a corresponding setting image for each of the plurality of setting processing, an information acceptance process including accepting information required to perform the setting processing through the displayed setting image, a shift command acceptance process including accepting a shift command for making a shift toward another setting processing from setting processing corresponding to the setting image displayed in the first display control process, and a second display control process including displaying an input completion image showing information accepted in the information acceptance process in addition to the setting image corresponding to the setting processing to be shifted by the shift command when the shift command is accepted in the shift command acceptance process.
摘要:
A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.
摘要:
A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.