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公开(公告)号：US07457507B2
公开(公告)日：2008-11-25
申请号：US10586664
申请日：2005-11-30
IPC分类号： G02B6/00
摘要： An organometallic polymer material is obtained which excels in translucency, shows improved hardness after it is cured and exhibits high reliability at high temperature and high humidity.Characteristically, the organometallic polymer material contains an organometallic polymer having an —M—O—M— bond (M indicates a metal atom), a metal alkoxide having a single hydrolyzable group and/or its hydrolysate and an organic polymer having a urethane bond and a methacryloxy or acryloxy group, and preferably further contains an organic anhydride and/or an organic acid.
摘要翻译： 得到透明性优异的有机金属聚合物材料，其在固化后显示出提高的硬度，并且在高温和高湿度下表现出高可靠性。 特征在于，有机金属聚合物材料含有具有-MOM-键（M表示金属原子）的有机金属聚合物，具有单个可水解基团的金属醇盐和/或其水解产物和具有氨基甲酸酯键和甲基丙烯酰氧基或丙烯酰氧基的有机聚合物 并且优选还包含有机酸酐和/或有机酸。
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公开(公告)号：US20080232762A1
公开(公告)日：2008-09-25
申请号：US10586664
申请日：2005-11-30
摘要： An organometallic polymer material is obtained which excels in translucency, shows improved hardness after it is cured and exhibits high reliability at high temperature and high humidity.Characteristically, the organometallic polymer material contains an organometallic polymer having an -M-O-M- bond (M indicates a metal atom), a metal alkoxide having a single hydrolyzable group and/or its hydrolysate and an organic polymer having a urethane bond and a methacryloxy or acryloxy group, and preferably further contains an organic anhydride and/or an organic acid.
摘要翻译： 得到透明性优异的有机金属聚合物材料，其在固化后显示出提高的硬度，并且在高温和高湿度下表现出高可靠性。 特征在于，有机金属聚合物材料含有具有-MOM-键（M表示金属原子）的有机金属聚合物，具有单个可水解基团的金属醇盐和/或其水解产物和具有氨基甲酸酯键和甲基丙烯酰氧基或丙烯酰氧基的有机聚合物 并且优选还包含有机酸酐和/或有机酸。
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公开(公告)号：US07181121B2
公开(公告)日：2007-02-20
申请号：US10850463
申请日：2004-05-21
申请人： Keiichi Kuramoto , Youhei Nakagawa , Mitsuaki Matsumoto , Hiroaki Izu , Hitoshi Hirano , Nobuhiko Hayashi
发明人： Keiichi Kuramoto , Youhei Nakagawa , Mitsuaki Matsumoto , Hiroaki Izu , Hitoshi Hirano , Nobuhiko Hayashi
IPC分类号： G02B6/10
CPC分类号： G02B6/1221 , G02B6/125 , G02B2006/12126
摘要： An optical device includes a substrate, a core provided on the substrate, a first clad and a second clad formed around the core. The optical device further includes a light absorber layer, provided on the substrate, which absorbs light leaked from the core. The light absorber layer is formed of, for instance, the same material as that constituting the core.
摘要翻译： 光学装置包括基板，设置在基板上的芯，围绕芯部形成的第一包层和第二包层。 光学装置还包括设置在基板上的吸收层，其吸收从芯部泄漏的光。 光吸收层由例如与构成芯的材料相同的材料形成。
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公开(公告)号：US20050207723A1
公开(公告)日：2005-09-22
申请号：US11057255
申请日：2005-02-15
CPC分类号： G02B6/1245 , G02B6/12004 , G02B6/1221 , G02B6/30 , G02B6/422
摘要： Disclosed herein is an optical waveguide comprising a core layer to be an optical transmission region, an upper clad layer and a lower clad layer covering the core layer, in which the core layer, the upper clad layer and the lower clad layer are formed from resin materials, characterized in that a microlens made of a material having a higher refractive index than that of a material constituting said core layer is disposed in the vicinity of an end face of said core layer.
摘要翻译： 本发明公开了一种光波导，其包括作为光透射区域的芯层，覆盖芯层的上覆盖层和下覆盖层，其中芯层，上覆层和下覆盖层由树脂形成 材料，其特征在于，由具有比构成所述芯层的材料的折射率高的材料制成的微透镜设置在所述芯层的端面附近。
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公开(公告)号：US20050205885A1
公开(公告)日：2005-09-22
申请号：US11059648
申请日：2005-02-17
CPC分类号： G02B6/138
摘要： Disclosed herein is an optical waveguide comprising a core layer to be an optical waveguide region, an upper clad layer covering the core layer and a lower clad layer, characterized in that an ultraviolet control region for preventing ultraviolet light from entering is provided at any one location of under the lower clad layer, on an interface of the lower clad layer and the upper clad layer, and on the upper clad layer. And a method of fabricating this optical waveguide is also disclosed.
摘要翻译： 本文公开了一种光波导，其包括作为光波导区域的芯层，覆盖芯层的上覆层和下包层，其特征在于，在任何一个位置处设置用于防止紫外线进入的紫外线控制区域 在下包层的下面，在下包层和上包层的界面上，在上包层上。 并且还公开了制造该光波导的方法。
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公开(公告)号：US20050106400A1
公开(公告)日：2005-05-19
申请号：US10952497
申请日：2004-09-29
CPC分类号： C08G77/20 , C03C17/28 , C08G77/58 , G02B1/04 , Y10T428/31663
摘要： An organometallic polymer material having a -M-O-M-bond (M is a metal atom) and containing a metal alkoxide having only one hydrolyzable group and/or a hydrolysate of the metal alkoxide and preferably further containing an organic acid anhydride and/or an organic acid.
摘要翻译： 具有-MOM键（M是金属原子）并且含有仅具有一个可水解基团的金属醇盐和/或金属醇盐的水解产物并且优选还含有机酸酐和/或有机酸的有机金属聚合物材料 。
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公开(公告)号：US5610096A
公开(公告)日：1997-03-11
申请号：US536370
申请日：1995-09-29
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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28.发明授权
公开(公告)号：US5506170A
公开(公告)日：1996-04-09
申请号：US365176
申请日：1994-12-28
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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公开(公告)号：US5416790A
公开(公告)日：1995-05-16
申请号：US147779
申请日：1993-11-04
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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公开(公告)号：US5608752A
公开(公告)日：1997-03-04
申请号：US430497
申请日：1995-04-28
申请人： Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
发明人： Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
CPC分类号： H01S5/2231 , H01S5/0658
摘要： In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.
摘要翻译： 在包括n型包覆层，形成在包层上的有源层，形成在有源层上的p型包层和设置在p型包层中的p型可饱和光吸收层的半导体激光器件中， 注入有源层的限流电流的限流宽度为W，有源层的厚度da，有源层的光限制因子GAMMA a，可饱和光吸收层的厚度ds，光限制因子 可饱和光吸收层的GAMMA和半导体激光装置的面上的光斑尺寸S被设定为满足预定关系。 光输出面的反射率设定在10〜20％的范围内。
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