公开(公告)号：US20060032585A1

公开(公告)日：2006-02-16

申请号：US11198182

申请日：2005-08-08

申请人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

发明人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/31122 ,  H01L21/31116

摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of side walls of the Poly-Si gate portion 33 during plasma etching of HfO2.

摘要翻译： 使用选自Ar气体，He气体，Ar + He混合气体的气体和通过混合CH形成的混合气体，用气体等离子体蚀刻诸如HfO 2的高介电常数栅极绝缘膜32， 在保持40℃或更高温度的同时保持高的蚀刻选择比，从而确保HfO 2膜32和多晶硅层33之间的高蚀刻选择比， 衬底Si层31和SiO 2掩模34，在HfO 3的等离子体蚀刻期间减少衬底Si层31的损耗量和多晶硅栅极部分33的侧壁的侧蚀刻， SUB> 2 。

公开(公告)号：US5320707A

公开(公告)日：1994-06-14

申请号：US63983

申请日：1993-05-20

申请人： Tadamitsu Kanekiyo ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Kotaro Fujimoto

发明人： Tadamitsu Kanekiyo ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Kotaro Fujimoto

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/677

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

摘要： Disclosed is a method of dry-etching a sample (e.g., a wafer) having an aluminum system film structure to be etched. Etching is performed in a plasma, under reduced pressure, the plasma being formed from a gas mixture containing a halogen system gas (e.g., Cl.sub.2, HBr, BCl.sub.3, etc.) and a ROH gas (e.g., CH.sub.3 OH, C.sub.3 H.sub.5 OH, C.sub.5 H.sub.7 OH, CH.sub.3 COOH, HOCH.sub.2 CH.sub.2 OH, etc.). By incorporating the ROH gas with the halogen system gas, in etching, e.g., an aluminum system film structure, etching can be performed with an accurate shape corresponding to a mask pattern, irrespective of the pattern density. Moreover, the aluminum system film structure can be etched at a uniform speed irrespective of the pattern density; and a selection ratio for etching the aluminum system film structure, as compared with etching material (e.g., organic resist) of the mask, is improved.

摘要翻译： 公开了一种干蚀刻具有要蚀刻的铝系膜膜结构的样品（例如，晶片）的方法。 在等离子体中在减压下进行蚀刻，等离子体由含有卤素系气体（例如Cl 2，HBr，BCl 3等）和ROH气体（例如CH 3 OH，C 3 H 5 OH，C 5 H 7 OH，CH 3 COOH）的气体混合物形成 ，HOCH2CH2OH等）。 通过将ROH气体与卤素系统气体结合，在蚀刻中，例如铝系膜膜结构，可以以对应于掩模图案的精确形状进行蚀刻，而与图案密度无关。 此外，铝系统膜结构可以以均匀的速度被蚀刻，而不管图案密度如何; 并且与掩模的蚀刻材料（例如有机抗蚀剂）相比，蚀刻铝系膜膜结构的选择比提高。

公开(公告)号：US07740739B2

公开(公告)日：2010-06-22

申请号：US11001059

申请日：2004-12-02

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

摘要翻译： 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。

公开(公告)号：US20090114152A1

公开(公告)日：2009-05-07

申请号：US12039887

申请日：2008-02-29

申请人： Tooru ARAMAKI ,  Tadamitsu Kanekiyo

发明人： Tooru ARAMAKI ,  Tadamitsu Kanekiyo

IPC分类号： B05C11/00

CPC分类号： H01L21/67248 ,  C23C16/463 ,  C23C16/52 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109

摘要： An apparatus for treating with plasma a specimen mounted on a specimen table and a next specimen mounted thereon after the treatment of the specimen is completed in a vacuumed container, comprises, a detector for measuring a temperature of the specimen table, and an adjustor for adjusting the temperature of the specimen table obtained when the next specimen is treated to have a value determined from a predetermined change in temperature of the specimen and one of the temperature of the specimen table measured by the detector and a temperature of returning refrigerant obtained after the treatment of the specimen is started, wherein the adjustor obtains the predetermined change in temperature of the specimen from the temperatures of the specimen measured in respective conditions in each of which conditions the treatment is continued until a changing rate of the temperature of the specimen becomes not more than a predetermined degree.

摘要翻译： 用于处理样品的样品安装在样品台上的样品和在样品处理后安装的下一个样品的等离子体装置在真空容器中完成，包括：用于测量样品台的温度的检测器和用于调节的调节器 当将下一个样品处理成具有从试样的预定温度变化确定的值和由检测器测量的试样台的温度和处理后得到的返回制冷剂的温度时的样品台的温度 开始试样，其中调节器在每个条件下在各条件下测量的试样的温度从样品的温度获得预定的变化，直到处理持续直到样品的温度变化不再变化 比预定程度。

公开(公告)号：US20090078375A1

公开(公告)日：2009-03-26

申请号：US12324125

申请日：2008-11-26

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： C23F1/00

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.

摘要翻译： 等离子体处理装置包括处理室，样品台，钟罩，线圈天线，法拉第屏蔽和位于钟罩的裙部下方并位于样品台上方的气环构件。 气环构件从设置在气环构件的内表面上的气体端口向钟罩内的等离子体产生空间提供处理气体。 环形板设置在法拉第罩的周边附近，并且具有面向气体环构件的内表面的内表面并且与气环构件的内表面间隔开，以限定其间的间隙。

公开(公告)号：US20090020227A1

公开(公告)日：2009-01-22

申请号：US11892665

申请日：2007-08-24

申请人： Youji Andou ,  Ryoji Nishio ,  Katsushi Yagi ,  Tadamitsu Kanekiyo

发明人： Youji Andou ,  Ryoji Nishio ,  Katsushi Yagi ,  Tadamitsu Kanekiyo

IPC分类号： H01L21/3065

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A vacuum processing apparatus includes a vacuum processing chamber, a high-vacuum exhaust pump for exhausting the vacuum processing chamber in vacuum, a low-vacuum exhaust pump connected to the downstream side of the high-vacuum exhaust pump, a lower electrode having mounted thereon a substrate to be processed, and a cooling gas supply unit for supplying the cooling gas between the substrate and the lower electrode. The cooling gas supply unit includes a cooling gas supply system and a cooling gas supply line. The cooling gas supply line is connected, through a first waste gas valve, to a waste gas line for exhausting the cooling gas. The waste gas line is connected just above the high-vacuum exhaust pump through a second waste gas valve, and to the exhaust gas line between the high-vacuum exhaust pump and the low-vacuum exhaust pump through a third waste gas valve.

摘要翻译： 真空处理装置包括真空处理室，用于真空排气真空处理室的高真空排气泵，连接到高真空排气泵下游侧的低真空排气泵，安装在其上的下电极 待处理的基板和用于在基板和下电极之间供给冷却气体的冷却气体供给单元。 冷却气体供给单元包括冷却气体供给系统和冷却气体供给管路。 冷却气体供给管线通过第一废气阀连接到用于排出冷却气体的废气管路。 废气管线通过第二废气阀正好连接在高真空排气泵上方，并通过第三废气阀与高真空排气泵和低真空排气泵之间的废气管路连接。

公开(公告)号：US20050087305A1

公开(公告)日：2005-04-28

申请号：US11001059

申请日：2004-12-02

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/507 ,  H01J37/32 ,  H01L21/00 ,  H01L21/306

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

摘要翻译： 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。

公开(公告)号：US6156663A

公开(公告)日：2000-12-05

申请号：US721732

申请日：1996-09-27

申请人： Katsuya Watanabe ,  Saburo Kanai ,  Ryoji Hamasaki ,  Tsuyoshi Yoshida ,  Yutaka Omoto ,  Masayuki Kojima ,  Syunji Sasabe ,  Tadamitsu Kanekiyo ,  Takazumi Ishizu

发明人： Katsuya Watanabe ,  Saburo Kanai ,  Ryoji Hamasaki ,  Tsuyoshi Yoshida ,  Yutaka Omoto ,  Masayuki Kojima ,  Syunji Sasabe ,  Tadamitsu Kanekiyo ,  Takazumi Ishizu

IPC分类号： H01J37/32 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32477 ,  C23F4/00 ,  H01J37/32192 ,  H01L21/32136

摘要： Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.

摘要翻译： 提供了一种通过电磁波产生等离子体来处理样品的方法，其中在用作放电区域的真空容器中设置含有碳的材料，例如碳化硅（Sic）。 通过使用片式干蚀刻装置通过O 2清洗处理来清洁蚀刻室的内部，并且在设置和控制蚀刻室的内壁温度之后，将样品输送到蚀刻室中，并且将TiN盖层 ，通过使用具有抗蚀剂膜的图案的BCl 3 / Cl 2 / CH 4 / Ar气体作为掩模，依次等离子体蚀刻Al-Cu合金层和TiN阻挡层。

公开(公告)号：US08801951B2

公开(公告)日：2014-08-12

申请号：US13210490

申请日：2011-08-16

申请人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

发明人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

IPC分类号： C03C15/00

CPC分类号： H01L21/31116

摘要： In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.

摘要翻译： 在等离子体处理方法中，通过在施加射频电力的状态下，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于等离子体，对待处理对象进行蚀刻， 在处理室的内壁上的沉积膜通过重复将被处理物暴露于等离子体的第一期间和第二期间，使被处理室的暴露于 等离子体和蚀刻速率比第一阶段低。 因此，能够抑制由于加工对象物的加工张数而增加的粒子。

公开(公告)号：US08057634B2

公开(公告)日：2011-11-15

申请号：US10902032

申请日：2004-07-30

申请人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

发明人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

IPC分类号： H01L21/205 ,  H01L21/302

CPC分类号： G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。