Abstract:
A positive electrode material that contains sulfur of high capacitance density as an active material without containing any large amount of conduction aid, namely, a positive electrode material for a battery of high energy density. There is provided a battery positive electrode material comprising a composite of conductive substance and sulfur and/or a sulfur compound having S—S bond, wherein there is disposed a composite microparticle layer having microparticles of conductive material cut into particles of sulfur and/or a sulfur compound having S—S bond. Further, there is provided a process for producing a battery positive electrode material, comprising conducting mechanofusion between particles of sulfur and/or above-mentioned sulfur compound as a raw material and microparticles of conductive material so as to obtain a composite material having a composite microparticle layer wherein the above microparticles are cut into the above particles.
Abstract:
Methods for pretreating and improving coking coal quality for producing blast-furnace coke by: (a) rapid-heating the coal charge in a fluidized-bed to a temperature range between not lower than 300° C. and not higher than the temperature at which the coal charge begins to soften, at a rate of 30 to 103 ° C./min., (b) classifying the rapid-heated coal charge to fine- and coarse-size coal, and then (c-1) briquetting the fine-size coal or (c-2) rapid-heating the fine- and coarse-size coal individually in a pneumatic preheater to a temperature range between not lower than 300° C. and not higher than the temperature at which the coal charge begins to soften, at a rate of 103 to 105 ° C./min., and (d) forming the fine-size coal.
Abstract:
A humidity-sensitive porous layer (13) of a humidity-sensitive element section (3) of a humidity sensor (1) is formed of a crystalline phase oxide grains such as Al2O3—SnO2—TiO2 and of a glass phase such as silicate glass covering the crystalline phase. The glass phase contains an alkali metal oxide and/or alkaline earth metal oxide such as Li2O. The humidity sensitive porous layer (13) assumes a skeletal structure that is formed of crystalline phase oxide grains covered or coated with the glass phase. A heater (17) of the humidity sensor is controlled to heat the humidity-sensitive element section (3) at a temperature ranging from 500° C. to 800° C. so as to clean off the humidity-sensitive element section while an internal combustion engine is running and exhausting fouling substances. Measurement of Humidity in an exhaust gas exhausted from an exhaust gas purifying apparatus of an internal combustion engine is carried out by using the humidity sensor (1), so long as the exhaust gas temperature does not exceed 100° C. regardless of whether or not the engine is running.
Abstract:
A substrate having silicon dots wherein at least one insulating layer and at least one group of silicon dots are formed on a substrate selected from a non-alkali glass substrate and a substrate made of a polymer material.
Abstract:
A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for control of chemical sputtering, and the chemical sputtering is effected on the target by the plasma to form silicon dots on the substrate.
Abstract:
There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
Abstract:
A separator unit inserted into a fuel cell having an electrolyte layer interposed between a fuel electrode and an oxygen electrode is provided with a plate like separator that separates fuel gas supplied to the fuel electrode from oxidizing gas supplied to the oxygen electrode, and a mesh like collector having an opening that forms one of a passage through which the fuel gas flows and a passage through which the oxidizing gas flows. The collector is provided to at least one side of the separator base in abutment against one of the fuel electrode and the oxygen electrode. The separator base has a coolant passage formed therein, through which a coolant is allowed to flow, and an electrode abutment portion of the collector, which abuts against one of the fuel electrode and the oxygen electrode, has an aperture ratio higher than those of other portions of the collector.
Abstract:
On a back surface of a back substrate on which electron emission sources are formed, a getter room is formed by the back substrate and a cup-shaped room member. In the inside of the getter room, a getter assembly which includes a getter housing which holds a getter and a getter support which supports the getter housing is arranged. End portions of the getter support are fixed to and arranged between the back substrate and the room member by a sealing material. The present invention provides an image display device which prevents the occurrence of cracks in the getter room thus suppressing the degradation of a display characteristic of the image display device.
Abstract:
A near-field optical head applied for a head of an information recording/reading apparatus for realizing information recording and reading with high density recording medium at high speed and with reliability through interaction between a near-field light and a recording medium using a slider having a near-field optical probe. A slider (1) having a near-field optical probe is put into proximity to a recording medium (3). Further, a distance is reduced between a light emitting element (2) and a microscopic aperture (7). The microscopic aperture is controlled in protrusion amount from the recording medium (3) by a piezoelectric element. Due to this, the light intensity in the probe or light detecting section is increased to increase interaction with the recording medium (3). This realizes information recording and reading apparatus with high sensitivity and accuracy.
Abstract:
A near-field optical head has a minute structure formed in the support member for interacting with a recording medium via near-field light. An optical waveguide is provided on the support member for guiding light between a light source and the minute structure. The optical waveguide has a core, a clad and a reflective surface, the core having an end face facing the reflective surface and being spaced therefrom so that light traveling through the optical waveguide is projected from the end face of the core onto the reflective surface and is reflected by the reflective surface toward the minute structure. Information is recorded to and/or read from the recording medium based on the scattering of near-field light between the recording medium and the minute structure while the near-field optical head is positioned over the surface of the recording medium.