公开(公告)号：US07352890B2

公开(公告)日：2008-04-01

申请号：US11356210

申请日：2006-02-17

申请人： Atsushi Shimoda ,  Ichirou Ishimaru ,  Yuji Takagi ,  Takuo Tamura ,  Yuichi Hamamura ,  Kenji Watanabe ,  Yasuhiko Ozawa ,  Seiji Isogai

发明人： Atsushi Shimoda ,  Ichirou Ishimaru ,  Yuji Takagi ,  Takuo Tamura ,  Yuichi Hamamura ,  Kenji Watanabe ,  Yasuhiko Ozawa ,  Seiji Isogai

IPC分类号： G06K9/00

CPC分类号： G06T7/0004 ,  G06T2207/30148 ,  H01L22/20

摘要： A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

摘要翻译： 一种用于分析电子电路图案缺陷的系统，包括：将结构缺陷的位置信息与电气故障的位置信息进行比较，并提取在结构缺陷和电气故障之间具有共同位置信息的证实缺陷; 基于预先存储的分类规则将提取的确证缺陷的图像分类为关键缺陷图像和非关键缺陷图像，该分类规则通过参考缺陷图像，缺陷位置信息和执行电子化的结果来定义关键和非关键缺陷 测试; 通过校正显示在屏幕上的分类缺陷图像的分类来修改预先存储的分类规则; 并对每个后续对象重复操作，其中对于被检查的每个当前对象，使用关于先前对象的经修改的预先存储的分类规则作为关于本对象的操作的预先存储的分类规则。

公开(公告)号：US20060140472A1

公开(公告)日：2006-06-29

申请号：US11356210

申请日：2006-02-17

申请人： Atsushi Shimoda ,  Ichirou Ishimaru ,  Yuji Takagi ,  Takuo Tamura ,  Yuichi Hamamura ,  Kenji Watanabe ,  Yasuhiko Ozawa ,  Seiji Isogai

发明人： Atsushi Shimoda ,  Ichirou Ishimaru ,  Yuji Takagi ,  Takuo Tamura ,  Yuichi Hamamura ,  Kenji Watanabe ,  Yasuhiko Ozawa ,  Seiji Isogai

IPC分类号： G06K9/00

CPC分类号： G06T7/0004 ,  G06T2207/30148 ,  H01L22/20

摘要： A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

摘要翻译： 一种用于分析电子电路图案缺陷的系统，包括：将结构缺陷的位置信息与电气故障的位置信息进行比较，并提取在结构缺陷和电气故障之间具有共同位置信息的证实缺陷; 基于预先存储的分类规则将提取的确证缺陷的图像分类为关键缺陷图像和非关键缺陷图像，该分类规则通过参考缺陷图像，缺陷位置信息和执行电子化的结果来定义关键和非关键缺陷 测试; 通过校正显示在屏幕上的分类缺陷图像的分类来修改预先存储的分类规则; 并对每个后续对象重复操作，其中对于被检查的每个当前对象，使用关于先前对象的经修改的预先存储的分类规则作为关于本对象的操作的预先存储的分类规则。

公开(公告)号：US06870169B2

公开(公告)日：2005-03-22

申请号：US10735575

申请日：2003-12-11

申请人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya ,  Naoki Hosoya

发明人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya ,  Naoki Hosoya

IPC分类号： G01N23/225 ,  G01Q30/02 ,  G01R31/26 ,  G06T7/00 ,  H01J37/147 ,  H01J37/252 ,  H01L21/66

CPC分类号： G06T7/0004 ,  G06T2207/30148

摘要： In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.

摘要翻译： 为了能够检测匹配缺陷位置的电子束的照射位置并且以高精度和高效率进行缺陷的组成分析，在本发明中，当选择组成分析目标缺陷并且 电子束被设置用于EDX分析，使用电子束在与包括缺陷的目标芯片附近的芯片上的该缺陷的位置相对应的缺陷对应位置处采集低分辨率的低分辨率参考图像，并且 接下来在目标芯片的缺陷位置获取相同低分辨率的低分辨率缺陷图像。 然后，通过比较这些低分辨率图像，获取缺陷位置，电子束被倾斜并照射在该缺陷位置以获得缺陷的组成谱。

公开(公告)号：US06741941B2

公开(公告)日：2004-05-25

申请号：US10449528

申请日：2003-05-29

申请人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya

发明人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya

IPC分类号： G06F1900

CPC分类号： H01L21/67253

摘要： To efficiently extract identification of apparatuses causing problems in a thin-film device manufacturing process, candidates for the problem-generating manufacturing apparatus are extracted by evaluating data obtained in relation to produced inspections and data indicating the states of the manufacturing apparatus, with respect to products that enable efficient extraction of problem-generated apparatuses in a thin-film devise manufacturing process. This facilitates inferring the identification of the problem-generating apparatus.

摘要翻译： 为了有效地提取在薄膜器件制造过程中导致问题的装置的识别，通过对与产生的检查获得的数据和指示制造装置的状态的数据相关的产品，提取问题产生制造装置的候选 这能够在薄膜设计制造过程中有效地提取问题产生的装置。 这有助于推断问题产生装置的识别。

公开(公告)号：US09191628B2

公开(公告)日：2015-11-17

申请号：US13699167

申请日：2011-05-18

申请人： Shinya Yamada ,  Yuji Takagi

发明人： Shinya Yamada ,  Yuji Takagi

IPC分类号： G06K9/00 ,  H04N7/18 ,  H01J37/244 ,  H01J37/28 ,  G01N23/00

CPC分类号： H04N7/18 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24578

摘要： A technique for calculating the angle from an auxiliary dot sequence indicating the track of a pattern and for performing pattern measurement is provided, thereby enabling achievement of high-accuracy pattern measurement with reduced influence of the roughness of pattern edges.

摘要翻译： 提供了用于从指示图案的轨迹的辅助点序列计算角度并执行图案测量的技术，从而能够以较少的图案边缘粗糙度的影响实现高精度图案测量。

公开(公告)号：US08556547B2

公开(公告)日：2013-10-15

申请号：US13138126

申请日：2010-01-13

申请人： Yuji Takagi ,  Seiichiro Kitaura

发明人： Yuji Takagi ,  Seiichiro Kitaura

IPC分类号： B23C5/10

CPC分类号： B23C5/10 ,  B23C2210/084

摘要： An end mill body wiih a corner cutting edge forming a convex arc shape of which the rotation locus becomes convex toward the tip outer peripheral side is formed at a side ridge portion of the corner cutting edge rake face, a gash is formed on the inner peripheral side of the corner cutting edge rake face, and an end cutting edge connected to the corner cutting edge and extending toward the inner peripheral side is formed at a tip-side side ridge portion of the end cutting edge rake face. An intersection line between the corner cutting edge rake face and the end cutting edge rake face is located closer to the radial inner peripheral side with respect to the axis than the center of the convex arc that the corner cutting edge forms in the rotation locus.

摘要翻译： 在角切削刃前刀面的侧脊部形成端铣刀体，形成在前刀面外周侧形成有凸起的凸弧形状的角刃，在内周面形成有间隙 并且在端部切削刃前刀面的前端侧的隆起部形成有与切削刃连接并向内周侧延伸的端部切削刃。 角切削刃前刀面和端切削刃前刀面之间的交线相对于轴线比径向内周侧更靠近转角轨迹中形成的凸弧的中心。

公开(公告)号：US20130120551A1

公开(公告)日：2013-05-16

申请号：US13699167

申请日：2011-05-18

申请人： Shinya Yamada ,  Yuji Takagi

发明人： Shinya Yamada ,  Yuji Takagi

IPC分类号： H04N7/18

CPC分类号： H04N7/18 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24578

摘要： A technique for calculating the angle from an auxiliary dot sequence indicating the track of a pattern and for performing pattern measurement is provided, thereby enabling achievement of high-accuracy pattern measurement with reduced influence of the roughness of pattern edges.

摘要翻译： 提供了用于从指示图案的轨迹的辅助点序列计算角度并执行图案测量的技术，从而能够以较少的图案边缘粗糙度的影响实现高精度图案测量。

公开(公告)号：US20120128230A1

公开(公告)日：2012-05-24

申请号：US13362151

申请日：2012-01-31

申请人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

发明人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G01N21/9501 ,  G01N21/95607 ,  G06T7/0004 ,  G06T2207/30148

摘要： An inspection method, including: illuminating a light on a wafer on which plural chips having identical patterns are formed; imaging corresponding areas of two chips formed on the wafer to obtain inspection images and reference images with an image sensor; and processing the obtained inspection image and the reference image to produce a difference image which indicates a difference between the inspection image and the reference image and detect a defect by comparing the difference image with a threshold, wherein a threshold applied to a difference image which is produced by comparing the inspection image and the reference image obtained by imaging peripheral portion of the wafer is different from a threshold applied to a difference image which is produced by comparing the inspection image and the reference image obtained by imaging central portion of the wafer.

摘要翻译： 一种检查方法，包括：在其上形成有多个具有相同图案的芯片的晶片上照射光; 对形成在晶片上的两个芯片的对应区域进行成像，以获得具有图像传感器的检查图像和参考图像; 并且处理所获得的检查图像和参考图像以产生指示检查图像和参考图像之间的差异的差异图像，并且通过将差异图像与阈值进行比较来检测缺陷，其中应用于差分图像的阈值是 通过比较检查图像和通过对晶片的周边部分进行成像获得的参考图像而产生的参考图像与通过比较检查图像和通过对晶片的中心部分进行成像而获得的参考图像而产生的差分图像的阈值不同。

公开(公告)号：US08086422B2

公开(公告)日：2011-12-27

申请号：US12341657

申请日：2008-12-22

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： G06F11/00

CPC分类号： G01N21/956 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

摘要翻译： 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态，将其分类为分布特征类别，或重复缺陷，拥塞缺陷，线性分布缺陷，环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中，基于由检查装置检测出的缺陷数据来分析缺陷分布状态，从而指定装置或处理中的缺陷的原因。

公开(公告)号：US20110164809A1

公开(公告)日：2011-07-07

申请号：US13049943

申请日：2011-03-17

申请人： Hisae Shibuya ,  Akira Hamamatsu ,  Yuji Takagi

发明人： Hisae Shibuya ,  Akira Hamamatsu ,  Yuji Takagi

IPC分类号： G06K9/00

CPC分类号： G06K9/6221 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8854 ,  G01N2021/95676

摘要： With the objective of achieving defect kind training in a short period of time to teach classification conditions of defects detected as a result of inspecting a thin film device, according to one aspect of the present invention, there is provided a visual inspection method, and an apparatus therefor, comprising the steps of: detecting defects based on inspection images acquired by optical or electronic defect detection means, and at the same time calculating features of the defects; and classifying the defects according to classification conditions set beforehand, wherein said classification condition setting step further includes the steps of: collecting defect features over a large number of defects acquired beforehand from the defect detection step; sampling defects based on the distribution of the collected defect features over the large number of defects; and setting defect classification conditions based on the result of reviewing the sampled defects.

摘要翻译： 为了在短时间内实现缺陷种类训练，目的在于教导检查薄膜装置的检测缺陷的分类条件，根据本发明的一个方面，提供一种目视检查方法， 其装置包括以下步骤：基于由光学或电子缺陷检测装置获取的检查图像检测缺陷，同时计算缺陷的特征; 并根据预先设定的分类条件对缺陷进行分类，其中所述分类条件设置步骤还包括以下步骤：从缺陷检测步骤预先获取的大量缺陷中收集缺陷特征; 基于收集的缺陷特征分布在大量缺陷上的采样缺陷; 并根据检查采样缺陷的结果设置缺陷分类条件。