公开(公告)号：US09350044B2

公开(公告)日：2016-05-24

申请号：US13604675

申请日：2012-09-06

申请人： Kazutaka Kuriki ,  Nobuhiro Inoue ,  Kai Kimura

发明人： Kazutaka Kuriki ,  Nobuhiro Inoue ,  Kai Kimura

IPC分类号： H01M10/04 ,  H01M10/052 ,  H01M10/058 ,  H01M10/44

CPC分类号： H01M10/052 ,  H01M10/058 ,  H01M10/446 ,  H01M2220/30 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/49108

摘要： An object is to improve the cycle performance by improving the reactivity between lithium and a negative electrode active material in the case where an alloy-based material such as silicon is used as the negative electrode active material. A method of manufacturing a lithium secondary battery including a positive electrode including a positive electrode active material into/from which lithium can be inserted/extracted, a negative electrode including a negative electrode active material into/from which lithium can be inserted/extracted, and an electrolyte solution is provided. The method includes the steps of electrochemically inserting lithium into the negative electrode with use of a counter electrode before the lithium secondary battery is assembled, electrochemically extracting part of the lithium inserted into the negative electrode after the insertion, and assembling the lithium secondary after the extraction.

摘要翻译： 本发明的目的是通过提高锂和负极活性物质之间的反应性来提高循环性能，在使用诸如硅的合金基材料作为负极活性物质的情况下。 一种制造锂二次电池的方法，该锂二次电池包括可以插入/提取锂的正极活性物质的正极，能够插入/提取锂的负极活性物质的负极，以及 提供电解质溶液。 该方法包括在组装锂二次电池之前使用对电极将锂电化学插入负极的步骤，在插入之后电化学提取插入到负极中的锂的一部分，并在提取后组装锂二次 。

公开(公告)号：US08940610B2

公开(公告)日：2015-01-27

申请号：US13085234

申请日：2011-04-12

申请人： Kazutaka Kuriki ,  Tamae Moriwaka ,  Satoshi Murakami ,  Shunpei Yamazaki

发明人： Kazutaka Kuriki ,  Tamae Moriwaka ,  Satoshi Murakami ,  Shunpei Yamazaki

IPC分类号： H01L21/331 ,  H01L21/02 ,  H01L29/04

CPC分类号： H01L29/045 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  Y02E60/122 ,  Y02P70/54

摘要： An electrode for an energy storage device with less deterioration due to charge and discharge, and a method for manufacturing thereof are provided. Further, an energy storage device having large capacity and high endurance can be provided. In an electrode of an energy storage device in which an active material is formed over a current collector, the surface of the active material is formed of a crystalline semiconductor film having a {110} crystal plane. The crystalline semiconductor film having a {110} crystal plane may be a crystalline silicon film containing a metal element which reacts with silicon to form a silicide. Alternatively, the crystalline semiconductor film having a {110} crystal plane may be a crystalline semiconductor film containing silicon as its main component and also containing germanium and a metal element which reacts with silicon to form a silicide.

摘要翻译： 提供了一种用于由于充放电而劣化较少的储能装置的电极及其制造方法。 此外，可以提供具有大容量和高耐久性的能量存储装置。 在其中在集电体上形成活性物质的能量存储装置的电极中，活性物质的表面由具有{110}晶面的结晶半导体膜形成。 具有{110}晶面的结晶半导体膜可以是含有与硅反应形成硅化物的金属元素的结晶硅膜。 或者，具有{110}晶面的结晶半导体膜可以是含有硅作为其主要成分并且还含有锗和与硅反应形成硅化物的金属元素的结晶半导体膜。

公开(公告)号：US08846496B2

公开(公告)日：2014-09-30

申请号：US13092249

申请日：2011-04-22

申请人： Sho Kato ,  Kazutaka Kuriki

发明人： Sho Kato ,  Kazutaka Kuriki

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/762

CPC分类号： H01L21/76251

摘要： To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.

摘要翻译： 提供通过简单且低成本的方法获得单晶半导体膜的方法。 通过气相外延生长法在单晶半导体衬底10的表面上形成具有压应力的单晶半导体膜11，在其上形成具有拉伸应力的膜（例如，热固性树脂膜12） 通过对单晶半导体膜11施加力的分离工序将单晶半导体膜11的表面，单晶半导体基板10和单晶半导体膜11分离，得到单晶 半导体膜。 另外，作为热固性树脂膜12，例如可以使用环氧树脂膜。

公开(公告)号：US08404001B2

公开(公告)日：2013-03-26

申请号：US13435127

申请日：2012-03-30

申请人： Kazutaka Kuriki

发明人： Kazutaka Kuriki

IPC分类号： H01G9/00

CPC分类号： H01M4/1391 ,  H01M4/0421 ,  H01M4/0471 ,  H01M4/131 ,  H01M4/525 ,  Y10T29/417 ,  Y10T29/49108

摘要： To suppress decomposition of lithium cobalt oxide and formation of a decomposition product. To suppress the reaction between oxygen in lithium cobalt oxide and a current collector. To obtain a power storage device having high charge and discharge capacity. In a method for manufacturing a power storage device, in forming a lithium cobalt oxide layer over a positive electrode current collector by a sputtering method using a target containing lithium cobalt oxide and a sputtering gas containing Ar, the positive electrode current collector is heated at a temperature at which c-axes of crystals of lithium cobalt oxide are aligned and cobalt oxide is not formed. The heating temperature of the positive electrode current collector is higher than or equal to 400° C. and lower than 600° C.

摘要翻译： 抑制钴酸锂的分解和分解产物的形成。 抑制钴酸锂中的氧与集电体的反应。 以获得具有高充放电能力的蓄电装置。 在蓄电装置的制造方法中，通过使用含有钴酸锂的靶和含有Ar的溅射气体的溅射法在正极集电体上形成钴酸锂层，将正极集电体加热至 钴酸锂的晶体的c轴取向，没有形成氧化钴的温度。 正极集电体的加热温度高于或等于400℃，低于600℃。

公开(公告)号：US20130071762A1

公开(公告)日：2013-03-21

申请号：US13610951

申请日：2012-09-12

申请人： Ryota TAJIMA ,  Shunpei Yamazaki ,  Teppei Oguni ,  Takeshi Osada ,  Shinya Sasagawa ,  Kazutaka Kuriki

发明人： Ryota TAJIMA ,  Shunpei Yamazaki ,  Teppei Oguni ,  Takeshi Osada ,  Shinya Sasagawa ,  Kazutaka Kuriki

IPC分类号： H01M4/583 ,  H01M8/22 ,  H01M4/64 ,  B82Y99/00 ,  B82Y30/00

CPC分类号： H01M4/133 ,  B82Y30/00 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/386 ,  H01M4/625 ,  H01M10/0525 ,  H01M10/465 ,  Y02E60/122 ,  Y02T10/7011

摘要： A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

公开(公告)号：US20130059195A1

公开(公告)日：2013-03-07

申请号：US13597652

申请日：2012-08-29

申请人： Kazutaka Kuriki ,  Mikio Yukawa ,  Nobuhiro Inoue

发明人： Kazutaka Kuriki ,  Mikio Yukawa ,  Nobuhiro Inoue

IPC分类号： H01M4/64 ,  H01G9/04 ,  H01M2/02

CPC分类号： H01G11/28 ,  H01G11/26 ,  H01G11/50 ,  H01M4/134 ,  H01M4/366 ,  H01M4/621 ,  H01M4/625 ,  H01M4/667 ,  H01M10/052 ,  H01M2004/021 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54

摘要： To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.

摘要翻译： 提供具有高可靠性并且可以小型化的蓄电装置用电极。 提供包括电极的蓄电装置。 在电极中，在集电体上设置减轻包含晶须的活性物质层的内部应力的应力消除层。 通过应力消除层，能够抑制集电体的变形，能够提高蓄电装置的生产率。 另外，能够减小蓄电装置的尺寸，提高其可靠性。 可以形成石墨烯以覆盖包括晶须的活性物质层。

公开(公告)号：US20130011550A1

公开(公告)日：2013-01-10

申请号：US13537294

申请日：2012-06-29

申请人： Toshihiko TAKEUCHI ,  Kazutaka Kuriki ,  Makoto Ishikawa

发明人： Toshihiko TAKEUCHI ,  Kazutaka Kuriki ,  Makoto Ishikawa

IPC分类号： C23C16/24

CPC分类号： C23C16/24 ,  C23C16/0281 ,  C23C16/56 ,  H01G11/30 ,  H01G11/50 ,  H01M4/134 ,  H01M4/386 ,  H01M10/0525 ,  Y02E60/13

摘要： A formation method of a silicon film which contributes to improvements in cycle characteristics and an increase in charge/discharge capacity and can be used as an active material layer is provided. In addition, a manufacturing method of a power storage device including the silicon film is provided. The formation method is as follows. A crystalline silicon film is formed over a conductive layer by an LPCVD method. The supply of a source gas is stopped and heat treatment is performed on the silicon film while the source gas is exhausted. The silicon film is grown to have whisker-like portions by an LPCVD method while the source gas is supplied into the reaction space. A power storage device is manufactured using, as an active material layer included in a negative electrode, the silicon film grown to have whisker-like portions.

摘要翻译： 提供有助于循环特性的改善和充电/放电容量增加的硅膜的形成方法，并且可以用作活性材料层。 此外，提供了包括硅膜的蓄电装置的制造方法。 形成方法如下。 通过LPCVD方法在导电层上形成晶体硅膜。 源气体的供给停止，并且在源气体排出时对硅膜进行热处理。 通过LPCVD方法将硅膜生长成具有晶须状部分，同时将源气体供应到反应空间中。 使用包括在负极中的活性物质层，制造出具有生长为具有晶须状部分的硅膜的蓄电装置。

公开(公告)号：US08207045B2

公开(公告)日：2012-06-26

申请号：US12692768

申请日：2010-01-25

申请人： Tetsuya Kakehata ,  Kazutaka Kuriki

发明人： Tetsuya Kakehata ,  Kazutaka Kuriki

IPC分类号： H01L21/302

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.

摘要翻译： 即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。 另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。 制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

公开(公告)号：US20110308582A1

公开(公告)日：2011-12-22

申请号：US13159919

申请日：2011-06-14

申请人： Riho Kataishi ,  Jiro Nishida ,  Kazutaka Kuriki

发明人： Riho Kataishi ,  Jiro Nishida ,  Kazutaka Kuriki

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device with a novel anti-reflection structure is provided. An uneven structure is formed on a surface of a semiconductor by growth of the same or different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided for a light incident plane side of the photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, the contamination of the semiconductor is not caused.

摘要翻译： 提供具有新型抗反射结构的光电转换装置。 通过相同或不同种类的半导体的生长在半导体的表面上形成不均匀结构，而不是通过蚀刻半导体衬底或半导体膜的表面形成抗反射结构。 例如，为光电转换装置的光入射面侧设置包括多个突起的半导体层，从而显着地减少表面反射。 这种结构可以通过气相沉积法形成; 因此，不会引起半导体的污染。

公开(公告)号：US20080318394A1

公开(公告)日：2008-12-25

申请号：US12213308

申请日：2008-06-18

申请人： Tetsuya Kakehata ,  Kazutaka Kuriki

发明人： Tetsuya Kakehata ,  Kazutaka Kuriki

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.

摘要翻译： 通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。 结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。