公开(公告)号：US07134186B2

公开(公告)日：2006-11-14

申请号：US11036922

申请日：2005-01-14

申请人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

发明人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US06345435B1

公开(公告)日：2002-02-12

申请号：US09443448

申请日：1999-11-22

申请人： Cherng-Chyi Han ,  Chyu-Jiuh Torng ,  Rodney Lee ,  Kochan Ju

发明人： Cherng-Chyi Han ,  Chyu-Jiuh Torng ,  Rodney Lee ,  Kochan Ju

IPC分类号： G11B542

CPC分类号： G11B5/59683 ,  G11B5/4813 ,  G11B5/5521 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method and design for the fabrication of a laminated yoke for a high data rate magnetic read-write transducer head. A full film layer of first ferromagnetic material is formed on a base using either plating or sputtering. The base comprises a read head, a ferromagnetic pole piece, and a ferromagnetic shield which also serves as a pole piece. A patterned layer of first non-magnetic dielectric is then formed on the full film layer of first ferromagnetic material. A patterned layer of photoresist is then formed on the full film layer of first ferromagnetic material and the patterned non-magnetic dielectric and used as a frame for a frame plating deposition of a patterned layer of second ferromagnetic material. The full film layer of first ferromagnetic material and the non-magnetic dielectric are then patterned, using the patterned layer of second ferromagnetic material as a mask and ion beam etching.

摘要翻译： 一种用于制造用于高数据速率磁读写传感器头的层叠磁轭的方法和设计。 使用电镀或溅射在基底上形成第一铁磁材料的完整膜层。 基座包括读头，铁磁极片和铁磁屏蔽，其也用作极片。 然后在第一铁磁材料的全部薄膜层上形成第一非磁性电介质的图案层。 然后在第一铁磁材料和图案化非磁性电介质的完整膜层上形成图案化的光致抗蚀剂层，并用作用于第二铁磁材料的图案化层的框架电镀沉积的框架。 然后使用第二铁磁材料的图案化层作为掩模和离子束蚀刻来对第一铁磁材料和非磁性介电体的全部膜层进行构图。

公开(公告)号：US06230390B1

公开(公告)日：2001-05-15

申请号：US09182761

申请日：1998-10-30

申请人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

发明人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

IPC分类号： G11B5127

CPC分类号： G11B5/3954 ,  G11B5/3932 ,  H04R15/00 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.

摘要翻译： 双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。 当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。 两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。 该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对的第一对横向磁偏压图案化的偏磁层基本上消磁时， 向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

公开(公告)号：US06816346B2

公开(公告)日：2004-11-09

申请号：US10791015

申请日：2004-03-02

申请人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

发明人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of said decoupling layer allows more latitude in etch depth control during manufacturing.

公开(公告)号：US06721143B2

公开(公告)日：2004-04-13

申请号：US09933963

申请日：2001-08-22

申请人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

发明人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of the decoupling layer allows more latitude in etch depth control during manufacturing.

摘要翻译： 随着自旋阀头的尺寸不断减小，正在遇到许多困难。 当外部磁场可能导致硬磁体的反转时，其中之一是具有纵向偏置，从而导致头部的歇斯底里响应。 随着硬磁体变薄，矫顽力降低变得更严重。 通过在用于稳定自旋阀本身的被钉扎层的反铁磁性层和用于纵向偏置的软铁磁层之间插入去耦层已经克服了这个问题。 该软铁磁层由沉积在其上的远离第一反铁磁性层的远侧的第二反铁磁层固定。 去耦层的存在确保了软层的磁化仅由第二反铁磁层确定。 包含去耦层在制造过程中允许蚀刻深度控制的更大的纬度。

公开(公告)号：US07184248B2

公开(公告)日：2007-02-27

申请号：US11264543

申请日：2005-11-01

申请人： Min Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B32B15/01 ,  B32B15/018 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  C22C30/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/308 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is MF2/MF1=(Js+Jex)/Js, where Js is the synthetic coupling energy between F1 and F2 and Jex is the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become MF2/MF1=1.

摘要翻译： 提供了一种图案化，合成的纵向交换偏置GMR传感器，其具有窄的有效轨道宽度和减小的侧读数。 通过满足强磁性自由层（F1）的磁化（M）和铁磁偏置层（F2）之间的新颖关系，能够确定这些层的最佳厚度，获得传感器的有利特性。 的铁磁材料和交换耦合材料。 要满足的关系是M＆lt; F2＆gt; /＆lt; F1＆gt; =＆lt; J＆gt; 其中J是F1和F2之间的合成耦合能量，并且J 2是在F2和覆盖的反铁磁钉扎层之间的交换能量。 替代实施例省略了使得该关系变为M F2 / M F1 / 1的叠加反铁磁钉扎层。

公开(公告)号：US07010848B2

公开(公告)日：2006-03-14

申请号：US10077064

申请日：2002-02-15

申请人： Min Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B32B15/01 ,  B32B15/018 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  C22C30/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/308 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is MF2/MF1=(Js+Jex)/Js, where Js is the synthetic coupling energy between F1 and F2 and Jex is the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become MF2/MF1=1.

摘要翻译： 提供了一种图案化，合成的纵向交换偏置GMR传感器，其具有窄的有效轨道宽度和减小的侧读数。 通过满足强磁性自由层（F 1）的磁化（M）和铁磁偏置层（F 2）之间的新颖关系，能够确定这些层的最佳厚度，从而获得传感器的有利特性。 宽范围的铁磁材料和交换耦合材料。 要满足的关系是M＆lt; F2＆gt; /＆lt; F1＆gt; =＆lt; J＆gt; 其中J 1是F 1和F 2之间的合成耦合能量，而J 2是在F 2和覆盖反铁磁之间的交换能量 钉扎层。 替代实施例省略了使得该关系变为M F2 / M F1 / 1的叠加反铁磁钉扎层。

公开(公告)号：US06665154B2

公开(公告)日：2003-12-16

申请号：US09931155

申请日：2001-08-17

申请人： Kochan Ju ,  You Feng Zheng ,  Rod Lee

发明人： Kochan Ju ,  You Feng Zheng ,  Rod Lee

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996

摘要： Spin valve heads with overlaid leads have several advantages over butted contiguous junction designs, including larger signal output and better head stability. However, in any overlaid design there is always present at least one high resistance layer between the GMR layer and the conductive leads. This leads to an effective read width that is greater than the actual physical width. This problem has been overcome by inserting a highly conductive channeling layer between the GMR stack and the conducting lead laminate. This arrangement ensures that, at the intersection between the leads and the GMR stack, virtually all the current moves out of the free layer into the leads thereby providing an effective read width for the device that is very close to the physical read width defined by the spacing between the two leads. A process for manufacturing the device is also described.

摘要翻译： 具有覆盖引线的旋转阀头具有优于对接连接结设计的优点，包括较大的信号输出和更好的磁头稳定性。 然而，在任何重叠的设计中，总是在GMR层和导电引线之间存在至少一个高电阻层。 这导致有效的读宽度大于实际物理宽度。 通过在GMR堆叠和导电铅层压板之间插入高度导电的沟道层已经克服了这个问题。 这种布置确保了在引线和GMR堆叠之间的交叉点处，几乎所有的电流都从自由层移动到引线中，从而为非常接近于由 两根导线之间的间距。 还描述了用于制造该装置的方法。

公开(公告)号：US06594124B2

公开(公告)日：2003-07-15

申请号：US09993402

申请日：2001-11-06

申请人： You Feng Zheng ,  Kochan Ju ,  Simon Liao

发明人： You Feng Zheng ,  Kochan Ju ,  Simon Liao

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/1171

摘要： An improved stabilization scheme for a GMR read head is described. Two important changes relative to prior art designs have been introduced. Instead of biasing by means of a permanent magnet or through exchange coupling with an antiferromagnetic layer, the magnetostatic field emanating from a nearby, but not contiguous, layer is used. Additionally, to obtain optimum stability with this scheme the bias, instead of running parallel to the easy axis of the free layer, is canted away from it towards the direction of the demagnetizing field of the pinned layer. A process for the manufacture of the structure is also described.

公开(公告)号：US5843521A

公开(公告)日：1998-12-01

申请号：US897796

申请日：1997-07-21

申请人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

发明人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

IPC分类号： G11B5/31 ,  G11B5/39 ,  B05D5/12

CPC分类号： G11B5/3967 ,  G11B5/3103 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3163 ,  Y10T428/1186 ,  Y10T428/265 ,  Y10T428/31678

摘要： A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.

摘要翻译： 一种用于形成磁换能器的方法，以及通过该方法形成的磁换能器。 首先提供基板。 然后在衬底上形成第一磁极层。 然后在第一磁极层上形成间隙填充介电层。 然后在填充介电层的间隙上形成种子层。 然后在种子层上形成光致抗蚀剂框架，该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法，其中光致抗蚀剂框架的侧壁的基部具有锥形，其在 电镀第二磁极层的边缘与其种子层的界面处。 然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上，其中籽晶层由厚度形成，并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿 由于镀覆的第二磁极层内的凹口，在第一磁极层和镀覆的第二磁极层之间。 用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。