公开(公告)号：US20070064474A1

公开(公告)日：2007-03-22

申请号：US11601747

申请日：2006-11-20

申请人： Kristy Campbell ,  Jon Daley ,  Joseph Brooks

发明人： Kristy Campbell ,  Jon Daley ,  Joseph Brooks

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  G11C13/0011 ,  G11C13/0033 ,  G11C13/0069 ,  G11C16/3431 ,  G11C2013/009 ,  G11C2213/72 ,  G11C2213/76

摘要： A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The threshold device is configured to switch from a high resistance state to a low resistance state upon application of a voltage and, when the voltage is removed, to re-assume the high resistance state. Additionally, the threshold device can be configured to switch in response to both negative and positive applied voltages across the first and second electrodes. Memory elements having a memory portion and threshold device between first and second electrodes and methods for forming the memory elements are also provided.

公开(公告)号：US20060131555A1

公开(公告)日：2006-06-22

申请号：US11018370

申请日：2004-12-22

申请人： Jun Liu ,  Terry Gilton ,  John Moore ,  Kristy Campbell

发明人： Jun Liu ,  Terry Gilton ,  John Moore ,  Kristy Campbell

IPC分类号： H01L29/04

CPC分类号： H01L45/085 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/16

摘要： A memory element having a first electrode is provided, wherein the first electrode comprises at least one conductive nanostructure. The memory element further includes a second electrode and a resistance variable material layer between the first and second electrodes. The first electrode electrically is coupled to the resistance variable material. Methods for forming the memory element are also provided.

摘要翻译： 提供了具有第一电极的存储元件，其中第一电极包括至少一个导电纳米结构。 存储元件还包括在第一和第二电极之间的第二电极和电阻可变材料层。 第一电极电耦合到电阻可变材料。 还提供了形成存储元件的方法。

公开(公告)号：US20060103026A1

公开(公告)日：2006-05-18

申请号：US11318509

申请日：2005-12-28

申请人： Kristy Campbell

发明人： Kristy Campbell

IPC分类号： H01L23/48

CPC分类号： H01L45/149 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1641 ,  H01L45/1675

摘要： A resistance variable memory element and a method for forming the same. The memory element has an amorphous carbon layer between first and second electrodes. A metal-containing layer is formed between the amorphous carbon layer and the second electrode.

摘要翻译： 一种电阻可变存储元件及其形成方法。 存储元件在第一和第二电极之间具有无定形碳层。 在无定形碳层和第二电极之间形成含金属层。

公开(公告)号：US20060045974A1

公开(公告)日：2006-03-02

申请号：US10925244

申请日：2004-08-25

申请人： Kristy Campbell ,  Rita Klein

发明人： Kristy Campbell ,  Rita Klein

IPC分类号： B05D5/12

CPC分类号： C23C14/0623 ,  C23C16/305 ,  C23C18/165 ,  C23C18/1692 ,  C23C18/44 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

摘要： A method of forming a silver-rich silver-selenide layer is provided. The method includes plating a silver layer on a silver-selenide layer using an electroless process and diffusing silver into the silver-selenide layer. Also, a method of forming a memory element is provided. The memory element is formed by forming a first electrode and forming a first layer of resistance variable material over the first electrode. A silver-selenide layer is formed over the first layer of resistance variable material and a silver layer is plated on the silver-selenide layer by an electroless process.

摘要翻译： 提供了形成富银硒化银层的方法。 该方法包括使用无电解方法在银硒层上镀银层并将银扩散到硒化银层中。 另外，提供了形成存储元件的方法。 存储元件通过形成第一电极并在第一电极上形成第一层电阻可变材料形成。 在第一层电阻可变材料之上形成硒化银层，并通过无电镀方法将银层镀在银 - 硒化物层上。

公开(公告)号：US20060038212A1

公开(公告)日：2006-02-23

申请号：US10921098

申请日：2004-08-19

申请人： John Moore ,  Kristy Campbell ,  Joseph Brooks

发明人： John Moore ,  Kristy Campbell ,  Joseph Brooks

IPC分类号： H01L29/94

CPC分类号： H01L27/2472 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/149

摘要： A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.

公开(公告)号：US20050286294A1

公开(公告)日：2005-12-29

申请号：US11149225

申请日：2005-06-10

申请人： Kristy Campbell

发明人： Kristy Campbell

IPC分类号： G11C11/00 ,  G11C13/02 ,  H01L45/00

CPC分类号： G11C13/02 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/11 ,  G11C2213/51 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1658

摘要： The invention relates to a resistance variable memory element including polarizable metal-chalcogen regions within a doped chalcogenide glass. A method for physically aligning the polarizable metal-chalcogen regions to form a conducting channel is provided. The invention also relates to a resistance variable memory element including metal-chalcogen regions within a chalcogenide glass backbone. The metal-chalcogen regions and glass regions bond to form a conducting channel. In addition, a method of operating such memory elements is provided in which metal ions move in and out of the conducting channels in response to applied voltages, thereby affecting the resistance of the memory elements.

公开(公告)号：US20050266635A1

公开(公告)日：2005-12-01

申请号：US11195642

申请日：2005-08-03

申请人： John Moore ,  Terry Gilton ,  Kristy Campbell

发明人： John Moore ,  Terry Gilton ,  Kristy Campbell

IPC分类号： H01L21/8234 ,  H01L27/24 ,  H01L45/00

CPC分类号： H01L45/1683 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/1658

摘要： The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.

摘要翻译： 本发明提供了一种PCRAM元件的设计，其结合了多种不同化学计量的含金属的硒化锗玻璃层。 本发明还提供了制造所公开的PCRAM结构的方法。

公开(公告)号：US20050162907A1

公开(公告)日：2005-07-28

申请号：US10765393

申请日：2004-01-28

申请人： Kristy Campbell

发明人： Kristy Campbell

IPC分类号： G11C11/00 ,  G11C13/02 ,  H01L45/00

CPC分类号： G11C13/02 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/11 ,  G11C2213/51 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1658

摘要： The invention relates to a resistance variable memory element including polarizable metal-chalcogen regions within a doped chalcogenide glass. A method for physically aligning the polarizable metal-chalcogen regions to form a conducting channel is provided. The invention also relates to a resistance variable memory element including metal-chalcogen regions within a chalcogenide glass backbone. The metal-chalcogen regions and glass regions bond to form a conducting channel. In addition, a method of operating such memory elements is provided in which metal ions move in and out of the conducting channels in response to applied voltages, thereby affecting the resistance of the memory elements.

摘要翻译： 本发明涉及一种在掺杂的硫族化物玻璃内包括可极化的金属 - 硫族元素区的电阻可变存储元件。 提供了一种用于物理对准可极化金属 - 硫族元素区域以形成导电通道的方法。 本发明还涉及一种在硫族化物玻璃主链内含有金属 - 硫族元素区的电阻变量记忆元件。 金属 - 硫族元素区域和玻璃区域结合形成导电通道。 此外，提供了一种操作这种存储元件的方法，其中金属离子响应于所施加的电压而进入和移出导电沟道，从而影响存储元件的电阻。

公开(公告)号：US20080093589A1

公开(公告)日：2008-04-24

申请号：US11643688

申请日：2006-12-22

申请人： Jun Liu ,  Terry Gilton ,  John Moore ,  Kristy Campbell

发明人： Jun Liu ,  Terry Gilton ,  John Moore ,  Kristy Campbell

IPC分类号： H01L29/04

CPC分类号： H01L45/085 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/16

摘要： A memory element having a first electrode is provided, wherein the first electrode comprises at least one conductive nanostructure. The memory element further includes a second electrode and a resistance variable material layer between the first and second electrodes. The first electrode electrically is coupled to the resistance variable material. Methods for forming the memory element are also provided.

摘要翻译： 提供了具有第一电极的存储元件，其中第一电极包括至少一个导电纳米结构。 存储元件还包括在第一和第二电极之间的第二电极和电阻可变材料层。 第一电极电耦合到电阻可变材料。 还提供了形成存储元件的方法。

公开(公告)号：US20070158631A1

公开(公告)日：2007-07-12

申请号：US11304593

申请日：2005-12-16

申请人： Jon Daley ,  Kristy Campbell

发明人： Jon Daley ,  Kristy Campbell

IPC分类号： H01L29/02 ,  H01L47/00

CPC分类号： H01L45/1246 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

摘要： A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

摘要翻译： 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间，并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。