公开(公告)号：US20210140918A1

公开(公告)日：2021-05-13

申请号：US17070142

申请日：2020-10-14

Applicant: Life Technologies Corporation

Inventor： Jonathan M. ROTHBERG ,  Keith G. FIFE ,  Jordan OWENS ,  James BUSTILLO

IPC: G01N27/414 ,  C12Q1/6874 ,  H01L29/66

Abstract: In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.

公开(公告)号：US20190131422A1

公开(公告)日：2019-05-02

申请号：US15959157

申请日：2018-04-20

Applicant: Life Technologies Corporation

Inventor： Keith G. FIFE

IPC: H01L29/66 ,  H01L27/11517 ,  G01N27/414 ,  H01L29/788

Abstract: A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes.

公开(公告)号：US20180180572A1

公开(公告)日：2018-06-28

申请号：US15818718

申请日：2017-11-20

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  Jordan Owens ,  Shifeng Li ,  James Bustillo

IPC: G01N27/414 ,  B01L3/00

Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

公开(公告)号：US20160178566A1

公开(公告)日：2016-06-23

申请号：US14971173

申请日：2015-12-16

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  Jungwook YANG

IPC: G01N27/414 ,  G06F17/50

CPC classification number: G01N27/4145 ,  G01N27/4148 ,  G06F17/5072 ,  G06F17/5077

Abstract: A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock.

Abstract translation: 诸如包括大传感器阵列的集成电路的高数据速率集成电路可以使用耦合到包括发射机对配置的发射机组的各个功率域中的时钟乘法器来实现。 集成电路上的参考时钟分配电路分配相对低速的参考时钟。 在发射机对配置中，每对包括发射机功率域中的第一发射机和第二发射机。 此外，每对发射机包括连接到参考时钟分配电路的时钟乘法器，并且设置在第一和第二发射机之间，产生本地发送时钟。

公开(公告)号：US20160097736A1

公开(公告)日：2016-04-07

申请号：US14964938

申请日：2015-12-10

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/302 ,  G01N27/4145 ,  G01N27/4148

Abstract: An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region.

Abstract translation: 离子敏感电路可以包括电荷累积装置，以根据流体的离子浓度和至少一个控制和读出晶体管累积多个电荷包，以产生作为累积的函数的输出信号 多个充电分组，输出信号表示溶液的离子浓度。 电荷蓄积装置可以包括在第一电极半导体区域上方的第一电荷控制电极，栅极半导体区域上方的电浮置栅极结构和离子敏感钝化表面以下的第二电荷控制电极，以及在第二电极半导体区域上方的第二电荷控制电极， 漏极扩散区域。 响应于第一控制信号，第一控制电极可以控制电荷进入栅极半导体区域。 离子敏感钝化表面可以被配置为接收流体。 第二充电控制电极可以响应于第二控制信号来控制多个电荷分组从栅极半导体区域的传输并进入漏极扩散区域。 漏极扩散区域可以经由第二电极半导体区域从栅极半导体区域接收多个电荷包。

公开(公告)号：US20160047747A1

公开(公告)日：2016-02-18

申请号：US14779532

申请日：2014-04-02

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Michael M. LAFFERTY ,  Jonathan M. ROTHBERG ,  Keith G. FIFE ,  Mark OLDHAM ,  Eric NORDMAN

IPC: G01N21/64

CPC classification number: G01N21/648 ,  C12Q1/6874 ,  G01N21/6454 ,  G01N2021/6441 ,  C12Q2563/107 ,  C12Q2563/155 ,  C12Q2565/101 ,  C12Q2565/629 ,  C12Q2565/632 ,  C12Q2565/607

Abstract: A device including a transparent layer defining a surface exposed to a flow volume and to secure a target polynucleotide template and a detector structure secured to the transparent layer and including a plurality of detectors to detect a signal emitted during nucleotide incorporation along the target polynucleotide template.

Abstract translation: 包括限定暴露于流量的表面的透明层并且固定目标多核苷酸模板和固定到透明层的检测器结构并包括多个检测器以检测沿着靶多核苷酸模板的核苷酸掺入期间发射的信号的透明层的装置。

公开(公告)号：US20140367750A1

公开(公告)日：2014-12-18

申请号：US14477125

申请日：2014-09-04

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE

IPC: G01N27/414 ,  G01N27/30

CPC classification number: G01N27/414 ,  G01N27/302 ,  G01N27/4145 ,  G01N27/4148

Abstract: An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region.

Abstract translation: 离子敏感电路可以包括电荷累积装置，以根据流体的离子浓度和至少一个控制和读出晶体管累积多个电荷包，以产生作为累积的函数的输出信号 多个充电分组，输出信号表示溶液的离子浓度。 电荷蓄积装置可以包括在第一电极半导体区域上方的第一电荷控制电极，栅极半导体区域上方的电浮置栅极结构和离子敏感钝化表面以下的第二电荷控制电极，以及在第二电极半导体区域上方的第二电荷控制电极， 漏极扩散区域。 响应于第一控制信号，第一控制电极可以控制电荷进入栅极半导体区域。 离子敏感钝化表面可以被配置为接收流体。 第二充电控制电极可以响应于第二控制信号来控制多个电荷分组从栅极半导体区域的传输并进入漏极扩散区域。 漏极扩散区域可以经由第二电极半导体区域从栅极半导体区域接收多个电荷包。

公开(公告)号：US20140264469A1

公开(公告)日：2014-09-18

申请号：US14197710

申请日：2014-03-05

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  Jordan OWENS ,  Shifeng LI ,  James BUSTILLO

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall.

Abstract translation: 在一个实施例中，描述了化学传感器。 化学传感器包括具有浮栅导体的化学敏感场效应晶体管。 材料限定了覆盖浮栅导体的开口。 该材料包括具有限定开口的侧壁的下部的内表面的导电元件。 电介质位于导电元件上，并具有限定侧壁上部的内表面。