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    Low drop out regulator and current trimming device
    21.
    发明授权
    Low drop out regulator and current trimming device 有权
    低压降稳压器和电流调整装置

    公开(公告)号：US09146569B2

    公开(公告)日：2015-09-29

    申请号：US13862963

    申请日：2013-04-15

    Applicant: Macronix International Co., Ltd.

    Inventor： Chia-Ching Li ,  Hsien-Hung Wu ,  Hsin-Yi Ho ,  Han-Sung Chen ,  Chun-Hsiung Hung ,  Tzung-Shen Chen

    IPC: G05F1/00 ,  G05F1/565

    CPC classification number: G05F1/565

    Abstract: A regulator comprises an amplifier, a bias circuit, and a current trimming circuit. The bias circuit is coupled to the amplifier and supplies a first bias current to the amplifier in a first mode of a system including the regulator. The current trimming circuit is coupled to the bias circuit to adjust the first bias current.

    Abstract translation: 调节器包括放大器，偏置电路和电流微调电路。 偏置电路耦合到放大器并且在包括调节器的系统的第一模式中向放大器提供第一偏置电流。 电流微调电路耦合到偏置电路以调节第一偏置电流。

    METHOD AND APPARATUS FOR ADJUSTING DRAIN BIAS OF A MEMORY CELL WITH ADDRESSED AND NEIGHBOR BITS
    22.
    发明申请
    METHOD AND APPARATUS FOR ADJUSTING DRAIN BIAS OF A MEMORY CELL WITH ADDRESSED AND NEIGHBOR BITS 审中-公开
    用于调整具有寻址和邻居位置的存储单元的漏磁偏移的方法和装置

    公开(公告)号：US20150085588A1

    公开(公告)日：2015-03-26

    申请号：US14556973

    申请日：2014-12-01

    Applicant: Macronix International Co., Ltd.

    Inventor： Han-Sung Chen ,  Chung-Kuang Chen ,  Chun-Hsiung Hung

    IPC: G11C7/00

    CPC classification number: G11C7/00 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C2211/5621

    Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.

    Abstract translation: 诸如非易失性存储单元的氮化物层的存储层具有存储单独可寻址数据的两个存储部分，通常分别靠近源极端子和漏极端子。 在感测一个存储部件的数据时所施加的漏极电压取决于存储在另一个存储部分的数据。 如果存储在另一个存储部分的数据由超过最小阈值电压的阈值电压表示，则所施加的漏极电压升高。 该技术在读取操作和程序验证操作中有助于拓宽阈值电压窗口。

    Method and apparatus for adjusting drain bias of a memory cell with addressed and neighbor bits
    26.
    发明授权
    Method and apparatus for adjusting drain bias of a memory cell with addressed and neighbor bits 有权
    用于调整具有寻址和相邻位的存储单元的漏极偏置的方法和装置

    公开(公告)号：US09396770B2

    公开(公告)日：2016-07-19

    申请号：US14833476

    申请日：2015-08-24

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Han-Sung Chen ,  Chung-Kuang Chen ,  Chun-Hsiung Hung

    IPC: G11C7/00 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34

    CPC classification number: G11C7/00 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/0458 ,  G11C16/3418 ,  G11C16/3427 ,  G11C2211/5621

    Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part; the different parts can be in different, neighboring memory cells. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.

    Abstract translation: 诸如非易失性存储单元的氮化物层的存储层具有存储单独可寻址数据的两个存储部分，通常分别靠近源极端子和漏极端子。 感测一个存储部件的数据的施加的漏极电压取决于存储在另一个存储部分的数据; 不同的部分可以在不同的，相邻的存储单元中。 如果存储在另一个存储部分的数据由超过最小阈值电压的阈值电压表示，则所施加的漏极电压升高。 该技术在读取操作和程序验证操作中有助于拓宽阈值电压窗口。

    Incremental step pulse programming (ISPP) scheme capable of determining a next starting pulse based on a current program-verify pulse for improving programming speed
    28.
    发明授权
    Incremental step pulse programming (ISPP) scheme capable of determining a next starting pulse based on a current program-verify pulse for improving programming speed 有权
    增量步进脉冲编程（ISPP）方案能够基于当前的程序验证脉冲来确定下一个起始脉冲，以提高编程速度

    公开(公告)号：US09171628B2

    公开(公告)日：2015-10-27

    申请号：US14210063

    申请日：2014-03-13

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Ming-Chao Lin ,  Han-Sung Chen

    IPC: G11C16/10 ,  G11C16/34

    CPC classification number: G11C16/10 ,  G11C16/3459

    Abstract: A method for programming a memory including a plurality of memory cells is provided. The method comprises selecting a current cell and executing a pre-program verify operation at a first program verify level. The method comprises executing a program and program verify operation for the current cell, including applying a sequence of program pulses and performing program verify steps. The sequence includes a starting pulse having a starting magnitude. The program verify steps use a second program verify level. The method also comprises determining the starting magnitude for a next cell as a function of a magnitude of the program pulse in an instance of the program verify step in which the current cell passes verify at the second program verify level.

    Abstract translation: 提供了一种用于对包括多个存储单元的存储器进行编程的方法。 该方法包括在第一程序验证级别选择当前小区并执行预编程验证操作。 该方法包括对当前小区执行程序和程序验证操作，包括应用程序脉冲序列并执行程序验证步骤。 该序列包括具有起始幅度的起始脉冲。 程序验证步骤使用第二个程序验证级别。 该方法还包括在当前小区在第二程序验证级别通过验证的程序验证步骤的情况下，根据程序脉冲的大小来确定下一个单元的起始幅度。

    MEMORY DEVICE AND METHOD FOR PROGRAMMING MEMORY CELL OF MEMORY DEVICE
    30.
    发明申请
    MEMORY DEVICE AND METHOD FOR PROGRAMMING MEMORY CELL OF MEMORY DEVICE 有权
    用于编程存储器件的存储器单元的存储器件和方法

    公开(公告)号：US20140146611A1

    公开(公告)日：2014-05-29

    申请号：US13688623

    申请日：2012-11-29

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Chung-Kuang Chen ,  Han-Sung Chen ,  Chun-Hsiung Hung

    IPC: G11C16/30

    CPC classification number: G11C16/30 ,  G11C11/5628 ,  G11C16/24 ,  G11C16/34 ,  G11C16/3427 ,  G11C16/3436 ,  G11C16/3454

    Abstract: A method for programming a memory cell of a memory device includes the following steps. A plurality of cycle number ranges are set up. A specific one of the plurality of cycle number ranges, in which the memory cell having a drain terminal passes a program-verification, is determined. A bias voltage is applied to the drain terminal for programming the memory cell, wherein the bias voltage varies with the specific cycle number range.

    Abstract translation: 一种用于编程存储器件的存储器单元的方法包括以下步骤。 设置多个循环数范围。 确定具有漏极端子的存储单元通过程序验证的多个循环数范围中的特定的一个。 向漏极端子施加偏置电压以对存储器单元进行编程，其中偏置电压随特定周期数范围变化。

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